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    TECHNIQUES FOR CONFIGURING MEMORY SYSTEMS USING ACCURATE OPERATING PARAMETERS
    1.
    发明申请
    TECHNIQUES FOR CONFIGURING MEMORY SYSTEMS USING ACCURATE OPERATING PARAMETERS 失效
    使用精确的操作参数配置存储器系统的技术

    公开(公告)号：US20090147609A1

    公开(公告)日：2009-06-11

    申请号：US12366550

    申请日：2009-02-05

    Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    IPC: G11C17/16 ,  G11C7/00

    CPC classification number: G11C11/4074 ,  G11C5/00 ,  G11C5/143 ,  G11C7/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/4402 ,  G11C2029/5006

    Abstract: Techniques are disclosed for reading operating parameters from programmable elements on memory devices to configure a memory system. More specifically, programmable elements, such as antifuses, located on a memory device are programmed during fabrication with measured operating parameters corresponding to the memory device. Operating parameters may include, for example, operating current values, or voltage and timing parameters. The memory device may be incorporated into a memory module that is incorporated into a system. Once the memory module is incorporated into a system, the programmable elements may be accessed such that the memory system can be configured to optimally operate in accordance with the operating parameters measured for each memory device in the system.

    Abstract translation: 公开了用于从存储器设备上的可编程元件读取操作参数以配置存储器系统的技术。 更具体地，位于存储器件上的诸如反熔丝的可编程元件在制造期间被编程，其中测量的操作参数对应于存储器件。 操作参数可以包括例如工作电流值或电压和定时参数。 存储器件可以并入到并入到系统中的存储器模块中。 一旦存储器模块被并入到系统中，可以访问可编程元件，使得可以将存储器系统配置成根据为系统中的每个存储器件测量的操作参数进行最佳操作。

    Techniques for implementing accurate operating current values stored in a database
    2.
    发明授权
    Techniques for implementing accurate operating current values stored in a database 失效
    用于实现存储在数据库中的精确操作电流值的技术

    公开(公告)号：US07483315B2

    公开(公告)日：2009-01-27

    申请号：US11452773

    申请日：2006-06-14

    Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    IPC: G11C7/06

    CPC classification number: G06F1/206 ,  G06F1/3203 ,  G06F1/3275 ,  G11C5/04 ,  G11C7/04 ,  G11C7/20 ,  G11C2029/4402 ,  Y02D10/13 ,  Y02D10/14

    Abstract: Memory modules and methods for fabricating and implementing memory modules wherein unique operating current values corresponding to specific memory devices on the memory modules are accessed from a database such that the operating current values may be implemented to improve system performance. Memory modules comprising a number of volatile memory devices may be fabricated. Operating current values corresponding to the specific memory devices on the memory module may be stored in a database and accessed during fabrication or during implementation of the memory modules in a system. System performance may be optimized by implementing the unique operating current values corresponding to the specific memory devices on the memory modules.

    Abstract translation: 用于制造和实现存储器模块的存储器模块和方法，其中对应于存储器模块上的特定存储器件的独特工作电流值从数据库访问，使得可以实现工作电流值以提高系统性能。 可以制造包括多个易失性存储器件的存储器模块。 对应于存储器模块上的特定存储器件的工作电流值可以存储在数据库中，并且在系统中的存储器模块的制造期间或实现期间被访问。 可以通过实现与存储器模块上的特定存储器设备相对应的独特的工作电流值来优化系统性能。

    Memory modules having accurate operating current values stored thereon and methods for fabricating and implementing such devices
    3.
    发明授权
    Memory modules having accurate operating current values stored thereon and methods for fabricating and implementing such devices 有权
    具有存储在其上的精确工作电流值的存储器模块以及用于制造和实施这种装置的方法

    公开(公告)号：US07404071B2

    公开(公告)日：2008-07-22

    申请号：US10816239

    申请日：2004-04-01

    Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    IPC: G06F9/312 ,  G06F15/177

    CPC classification number: G06F11/3037 ,  G06F11/073 ,  G06F11/0751 ,  G06F11/3058

    Abstract: Memory modules having accurate operating current values stored thereon and methods for fabricating and implementing such devices to improve system performance. Memory modules comprising a number of volatile memory devices may be fabricated. Operating current values for specific memory devices on the memory module or a specific lot in which the memory devices are fabricated may be stored on a non-volatile memory device on the memory module. A system may be configured in accordance with the operating current values stored on the non-volatile memory device such that operating current thresholds are not exceeded.

    Abstract translation: 具有存储在其上的精确工作电流值的存储器模块以及用于制造和实施这些装置以改善系统性能的方法。 可以制造包括多个易失性存储器件的存储器模块。 存储器模块或其中制造存储器件的特定批量的特定存储器件的操作电流值可以存储在存储器模块上的非易失性存储器件上。 可以根据存储在非易失性存储器件上的工作电流值来配置系统，使得不超过工作电流阈值。

    Memory devices having programmable elements with accurate operating parameters stored thereon
    4.
    发明授权
    Memory devices having programmable elements with accurate operating parameters stored thereon 失效
    存储器件具有存储在其上的精确操作参数的可编程元件

    公开(公告)号：US08339888B2

    公开(公告)日：2012-12-25

    申请号：US13276592

    申请日：2011-10-19

    Applicant: Jeffrey W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    Inventor： Jeffrey W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    IPC: G11C17/18

    CPC classification number: G11C11/4074 ,  G11C5/00 ,  G11C5/143 ,  G11C7/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/4402 ,  G11C2029/5006

    Abstract: A system with a memory device having programmable elements used to configure a memory system. More specifically, programmable elements, such as antifuses, located on a memory device are programmed during fabrication with measured operating parameters corresponding to the memory device. Operating parameters may include, for example, operating current values, operating voltages, or timing parameters. The memory device is incorporated into a system. Once the memory device is incorporated into a system, the programmable elements may be accessed by a processor such that the memory system can be configured to optimally operate in accordance with the operating parameters measured for the memory device in the system.

    Abstract translation: 具有存储器件的系统具有用于配置存储器系统的可编程元件。 更具体地，位于存储器件上的诸如反熔丝的可编程元件在制造期间被编程，其中测量的操作参数对应于存储器件。 操作参数可以包括例如工作电流值，工作电压或时序参数。 存储器件被并入到系统中。 一旦存储器件被并入到系统中，可编程元件可以由处理器访问，使得存储器系统可以被配置为根据对系统中的存储器件测量的操作参数进行最佳操作。

    MEMORY DEVICES HAVING PROGRAMMABLE ELEMENTS WITH ACCURATE OPERATING PARAMETERS STORED THEREON
    6.
    发明申请
    MEMORY DEVICES HAVING PROGRAMMABLE ELEMENTS WITH ACCURATE OPERATING PARAMETERS STORED THEREON 失效
    具有存储的精确操作参数的可编程元件的存储器件

    公开(公告)号：US20120036314A1

    公开(公告)日：2012-02-09

    申请号：US13276592

    申请日：2011-10-19

    Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    IPC: G06F12/02

    CPC classification number: G11C11/4074 ,  G11C5/00 ,  G11C5/143 ,  G11C7/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/4402 ,  G11C2029/5006

    Abstract: A system with a memory device having programmable elements used to configure a memory system. More specifically, programmable elements, such as antifuses, located on a memory device are programmed during fabrication with measured operating parameters corresponding to the memory device. Operating parameters may include, for example, operating current values, operating voltages, or timing parameters. The memory device is incorporated into a system. Once the memory device is incorporated into a system, the programmable elements may be accessed by a processor such that the memory system can be configured to optimally operate in accordance with the operating parameters measured for the memory device in the system.

    Abstract translation: 具有存储器件的系统具有用于配置存储器系统的可编程元件。 更具体地，位于存储器件上的诸如反熔丝的可编程元件在制造期间被编程，其中测量的操作参数对应于存储器件。 操作参数可以包括例如工作电流值，工作电压或时序参数。 存储器件被并入到系统中。 一旦存储器件被并入到系统中，可编程元件可以由处理器访问，使得存储器系统可以被配置为根据对系统中的存储器件测量的操作参数进行最佳操作。

    Memory modules having accurate operating parameters stored thereon and methods for fabricating and implementing such devices
    7.
    发明授权
    Memory modules having accurate operating parameters stored thereon and methods for fabricating and implementing such devices 失效
    具有存储在其上的精确操作参数的存储器模块以及用于制造和实施这些装置的方法

    公开(公告)号：US07480792B2

    公开(公告)日：2009-01-20

    申请号：US11495964

    申请日：2006-07-28

    Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    IPC: G06F9/312 ,  G06F15/177

    CPC classification number: G06F11/3037 ,  G06F11/073 ,  G06F11/0751 ,  G06F11/3058

    Abstract: Memory modules having accurate operating parameters stored thereon and methods for fabricating and implementing such devices to improve system performance. Memory modules comprising a number of volatile memory devices may be fabricated. Operating parameters for specific memory devices on the memory module or a specific lot in which the memory devices are fabricated may be stored on a non-volatile memory device on the memory module. A system may be configured in accordance with the operating parameters stored on the non-volatile memory device such that corresponding thresholds are not exceeded.

    Abstract translation: 具有存储在其上的精确操作参数的存储器模块以及用于制造和实施这些设备以提高系统性能的方法。 可以制造包括多个易失性存储器件的存储器模块。 存储器模块或其中制造存储器件的特定批量的特定存储器件的操作参数可以存储在存储器模块上的非易失性存储器件上。 可以根据存储在非易失性存储设备上的操作参数来配置系统，使得不超过相应的阈值。

    System and method for quick self-refresh exit with transitional refresh
    9.
    发明授权
    System and method for quick self-refresh exit with transitional refresh 失效
    快速自刷新退出与过渡刷新的系统和方法

    公开(公告)号：US06865132B2

    公开(公告)日：2005-03-08

    申请号：US10781149

    申请日：2004-02-17

    Applicant: Scott Schaefer ,  Todd D. Farrell

    Inventor： Scott Schaefer ,  Todd D. Farrell

    IPC: G11C11/406 ,  G11C7/00

    CPC classification number: G11C11/406

    Abstract: A system and method are disclosed to add logic to the self-refresh control logic presently employed in DRAM devices to ensure that, upon transitions between self-refresh mode and operational mode, at least one row of memory cells due to be refreshed is refreshed during the wait state following issuance of the transition command. Conducting this refresh during this existing wait state eliminates both the concern as to whether rows have been refreshed within the mandated refresh interval and the time required to execute an auto-refresh of at least one row upon completion of the transition.

    Abstract translation: 公开了一种系统和方法，用于向当前在DRAM设备中使用的自刷新控制逻辑添加逻辑，以确保在自刷新模式和操作模式之间的转换时，在刷新期间至少一行存储器单元被刷新 发布转换命令后的等待状态。 在此现有等待状态期间执行此刷新消除了在强制刷新间隔内刷新行是否已被刷新以及完成转换后执行至少一行自动刷新所需的时间的担忧。

    Techniques for storing accurate operating current values
    10.
    发明授权
    Techniques for storing accurate operating current values 有权
    用于存储精确的工作电流值的技术

    公开(公告)号：US07333384B2

    公开(公告)日：2008-02-19

    申请号：US11338155

    申请日：2006-01-24

    Applicant: Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    Inventor： Jeffery W. Janzen ,  Scott Schaefer ,  Todd D. Farrell

    IPC: G11C17/18

    CPC classification number: G11C11/4074 ,  G11C5/00 ,  G11C5/143 ,  G11C7/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/4402 ,  G11C2029/5006

    Abstract: Methods of configuring a system. More specifically, operating current values corresponding to respective memory devices of memory module may be stored in programmable elements, such as antifuses, located on the memory device, during fabrication. The operating current values may be read from and/or stored in a non-volatile memory device on the memory module. Once the memory module is incorporated into a system, the programmable elements on the memory devices and/or the non-volatile memory device on the memory module may be accessed such that the system can be configured to optimally operate in accordance with the operating current values measured for each memory device in the system.

    Abstract translation: 配置系统的方法 更具体地，对应于存储器模块的各个存储器件的工作电流值可以在制造期间存储在位于存储器件上的可编程元件，例如反熔丝。 操作电流值可以从存储器模块中的非易失性存储器件读取和/或存储在存储器模块中的非易失性存储器件中。 一旦存储器模块被并入到系统中，可以访问存储器模块上的可编程元件和/或存储器模块上的非易失性存储器设备，使得可以将系统配置为根据工作电流值进行最佳操作 测量系统中的每个存储设备。

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