Nonvolatile memory device and reading method thereof
    1.
    发明授权
    Nonvolatile memory device and reading method thereof 有权
    非易失性存储器件及其读取方法

    公开(公告)号:US08705279B2

    公开(公告)日:2014-04-22

    申请号:US13341472

    申请日:2011-12-30

    Applicant: Se Hyun Kim

    Inventor: Se Hyun Kim

    CPC classification number: G11C16/26 G11C11/5642 G11C16/0483

    Abstract: In a method of reading a nonvolatile memory device, the method comprising, a reading operation of reading data of a selected memory cell; and a read retry operation of performing one or more read operations by changing a non-selection read voltage applied to non-selected memory cells until the read operation succeeds, when it is detected that an error has occurred in the operation of reading data.

    Abstract translation: 在一种非易失性存储器件的读取方法中,该方法包括:读取所选存储单元的数据的读取操作; 以及读取重试操作,当检测到在读取数据的操作中发生错误时,通过改变施加到未选择的存储器单元的非选择读取电压直到读取操作成功来执行一个或多个读取操作。

    OFFLINE TRANSACTION PAYMENT SYSTEM, AND METHOD AND APPARATUS FOR THE SAME
    2.
    发明申请
    OFFLINE TRANSACTION PAYMENT SYSTEM, AND METHOD AND APPARATUS FOR THE SAME 审中-公开
    离线交易支付系统及其方法和装置

    公开(公告)号:US20140032415A1

    公开(公告)日:2014-01-30

    申请号:US14007895

    申请日:2012-10-23

    CPC classification number: G06Q20/385 G06Q20/20

    Abstract: The present invention related to an offline transaction payment system and a method and apparatus for the same, which receives an electronic payment request from a terminal, transmits a request for execution of an electronic payment application to the terminal, receives an application ID from the electronic payment application executed in the terminal, performs member verification using the received application ID, transmits the member verification result to the electronic payment application, receives a one-time password from the electronic payment application, and mediates an electronic payment for a transaction that takes place offline using the one-time password.

    Abstract translation: 本发明涉及一种离线交易支付系统及其方法和装置,其从终端接收电子支付请求,向终端发送执行电子支付应用的请求,从电子接收应用ID 在终端执行的支付应用程序,使用接收到的应用程序ID执行成员验证,将成员验证结果发送到电子支付应用程序,从电子支付应用程序接收一次密码,并调停用于发生的交易的电子支付 离线使用一次性密码。

    Method of fabricating memory device
    3.
    发明授权
    Method of fabricating memory device 失效
    制造存储器件的方法

    公开(公告)号:US07678689B2

    公开(公告)日:2010-03-16

    申请号:US11931400

    申请日:2007-10-31

    Applicant: Se Hyun Kim

    Inventor: Se Hyun Kim

    CPC classification number: H01L21/76897 H01L21/76831 H01L27/10855

    Abstract: Disclosed herein is a method of fabricating a memory device. The method includes forming an etch stop layer, bit lines, and a first hard mask pattern over a semiconductor substrate. A first SNC plug is formed between the bit lines, and an etch process is performed to reduce the height of the first hard mask pattern and the first SNC plug, to increase a top width of the first hard mask pattern, and to reduce a top width of the first SNC plug. The method also includes forming a second hard mask pattern on the first hard mask pattern, and forming a second SNC plug between the second hard mask patterns.

    Abstract translation: 这里公开了一种制造存储器件的方法。 该方法包括在半导体衬底上形成蚀刻停止层,位线和第一硬掩模图案。 在位线之间形成第一SNC插头,并且执行蚀刻处理以减小第一硬掩模图案和第一SNC插头的高度,以增加第一硬掩模图案的顶部宽度,并且减少顶部 第一个SNC插头的宽度。 该方法还包括在第一硬掩模图案上形成第二硬掩模图案,以及在第二硬掩模图案之间形成第二SNC插头。

    Method of Fabricating Memory Device
    4.
    发明申请
    Method of Fabricating Memory Device 失效
    制造存储器件的方法

    公开(公告)号:US20090004810A1

    公开(公告)日:2009-01-01

    申请号:US11931400

    申请日:2007-10-31

    Applicant: Se Hyun Kim

    Inventor: Se Hyun Kim

    CPC classification number: H01L21/76897 H01L21/76831 H01L27/10855

    Abstract: Disclosed herein is a method of fabricating a memory device. The method includes forming an etch stop layer, bit lines, and a first hard mask pattern over a semiconductor substrate. A first SNC plug is formed between the bit lines, and an etch process is performed to reduce the height of the first hard mask pattern and the first SNC plug, to increase a top width of the first hard mask pattern, and to reduce a top width of the first SNC plug. The method also includes forming a second hard mask pattern on the first hard mask pattern, and forming a second SNC plug between the second hard mask patterns.

    Abstract translation: 这里公开了一种制造存储器件的方法。 该方法包括在半导体衬底上形成蚀刻停止层,位线和第一硬掩模图案。 在位线之间形成第一SNC插头,并且执行蚀刻处理以减小第一硬掩模图案和第一SNC插头的高度,以增加第一硬掩模图案的顶部宽度,并且减少顶部 第一个SNC插头的宽度。 该方法还包括在第一硬掩模图案上形成第二硬掩模图案,以及在第二硬掩模图案之间形成第二SNC插头。

    Method of registering a membership for an electronic payment, system for same, and apparatus and terminal thereof

    公开(公告)号:US10108937B2

    公开(公告)日:2018-10-23

    申请号:US14007599

    申请日:2012-09-04

    Abstract: The present invention relates to a method of registering a membership for an electronic payment, a system for same, and an apparatus and a terminal thereof. The system according to the present invention includes: a terminal for receiving an application identifier, registering payment means information and processing a membership registration completion, when at least one or more of first authentication information, second authentication information and fourth authentication information input by a user is authenticated; and a membership registration apparatus for, when at least one or more of a first authentication procedure completion signal, a second authentication procedure completion signal and a fourth authentication procedure completion signal is received from the terminal, confirming whether membership application of user information on the terminal is performed, allocating the application identifier to perform electronic payment, and completing membership registration for the user information on the terminal after registering the payment means information.

    Multi-layered ceramic capacitor having dual layer-electrode structure
    6.
    发明授权
    Multi-layered ceramic capacitor having dual layer-electrode structure 有权
    具有双层电极结构的多层陶瓷电容器

    公开(公告)号:US08634180B2

    公开(公告)日:2014-01-21

    申请号:US13302375

    申请日:2011-11-22

    CPC classification number: H01G4/008 H01G4/2325 H01G4/30

    Abstract: There is provided a multi-layered ceramic capacitor having a dual layer-electrode structure formed by applying a dual layer of electrode paste to the multi-layered ceramic capacitor. The multi-layered ceramic capacitor having a dual layer-electrode structure includes a capacitor body having a preset length and width and having a plurality dielectric layers stacked therein, an internal electrode unit formed on the plurality of dielectric layers and having a preset capacitance, and an external electrode unit including first external electrodes respectively formed on both sides of the capacitor body to be electrically connected to internal electrodes, and second external electrodes formed on the first external electrodes.

    Abstract translation: 提供一种多层陶瓷电容器,其具有通过将双层电极浆料施加到多层陶瓷电容器而形成的双层电极结构。 具有双层电极结构的多层陶瓷电容器包括具有预设长度和宽度的电容器体,并且其中堆叠有多个电介质层,形成在多个电介质层上并具有预设电容的内部电极单元,以及 外部电极单元包括分别形成在电容器主体的两侧以与内部电极电连接的第一外部电极,以及形成在第一外部电极上的第二外部电极。

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