公开(公告)号：US20140376345A1

公开(公告)日：2014-12-25

申请号：US14313197

申请日：2014-06-24

Applicant: Seagate Technology LLC

Inventor： David C. Seets ,  Yongjun Zhao ,  Mark Ostrowski

IPC: G11B5/187 ,  G11B5/48

CPC classification number: G11B5/4866 ,  G11B5/127 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B13/08 ,  G11B2005/0021 ,  Y10T29/49025 ,  Y10T29/49032

Abstract: A method fabricating a near field transducer for a heat assisted magnetic recording head including forming a peg region of a near field transducer along a first portion of a substrate of a heat assisted magnetic recording head, removing a first portion of the peg region, fabricating a barrier material along a surface of the peg region created by the removal of the first portion of the peg region; and forming an enlarged region adjacent the surface such that the barrier material is disposed at least between the surface of the peg region and the enlarged region.

Abstract translation: 一种制造用于热辅助磁记录头的近场换能器的方法，包括沿着热辅助磁记录头的基底的第一部分形成近场换能器的钉区，去除钉区的第一部分， 通过去除所述钉区域的第一部分而产生的沿着所述钉带区域的表面的阻挡材料; 并且形成邻近所述表面的扩大区域，使得所述阻挡材料至少设置在所述钉区域的表面和所述扩大区域之间。

公开(公告)号：US09283651B2

公开(公告)日：2016-03-15

申请号：US14019903

申请日：2013-09-06

Applicant: Seagate Technology LLC

Inventor： Yongjun Zhao ,  David C. Seets ,  Mark Ostrowski

IPC: B24B37/10 ,  B24B49/10 ,  B24B37/013 ,  G11B5/31

CPC classification number: B24B49/10 ,  B24B37/013 ,  G11B5/3169 ,  G11B5/3173

Abstract: An electrical lapping guide has a body with a thickness along a wafer axis, the body comprising a layer of conductive material having a resistivity. The conductive material layer comprises a first contact region and a second contact region, the first and second contact regions configured to electrically connect the electrical lapping guide to electrical leads. A lapping edge comprises an air-bearing plane axis perpendicular to a lapping axis, and a back edge opposite the lapping edge, the back edge comprising a plurality of notches.

Abstract translation: 电研磨引导件具有沿着晶片轴线的厚度的主体，主体包括具有电阻率的导电材料层。 导电材料层包括第一接触区域和第二接触区域，第一和第二接触区域被配置为将电研磨引导件电连接到电引线。 研磨边缘包括垂直于研磨轴线的空气轴承平面轴线和与研磨边缘相对的后边缘，后边缘包括多个凹口。

公开(公告)号：US20150072593A1

公开(公告)日：2015-03-12

申请号：US14019903

申请日：2013-09-06

Applicant: Seagate Technology LLC

Inventor： Yongjun Zhao ,  David C. Seets ,  Mark Ostrowski

IPC: B24B49/10 ,  G11B5/31 ,  B24B37/013

CPC classification number: B24B49/10 ,  B24B37/013 ,  G11B5/3169 ,  G11B5/3173

Abstract: An electrical lapping guide has a body with a thickness along a wafer axis, the body comprising a layer of conductive material having a resistivity. The conductive material layer comprises a first contact region and a second contact region, the first and second contact regions configured to electrically connect the electrical lapping guide to electrical leads. A lapping edge comprises an air-bearing plane axis perpendicular to a lapping axis, and a back edge opposite the lapping edge, the back edge comprising a plurality of notches.

Abstract translation: 电研磨引导件具有沿着晶片轴线的厚度的主体，主体包括具有电阻率的导电材料层。 导电材料层包括第一接触区域和第二接触区域，第一和第二接触区域被配置为将电研磨引导件电连接到电引线。 研磨边缘包括垂直于研磨轴线的空气轴承平面轴线和与研磨边缘相对的后边缘，后边缘包括多个凹口。

公开(公告)号：US09196279B2

公开(公告)日：2015-11-24

申请号：US14313197

申请日：2014-06-24

Applicant: Seagate Technology LLC

Inventor： David C. Seets ,  Yongjun Zhao ,  Mark Ostrowski

IPC: G11B5/00 ,  G11B5/48 ,  G11B5/31 ,  G11B13/08 ,  G11B5/187 ,  G11B5/127 ,  G11B5/60

CPC classification number: G11B5/4866 ,  G11B5/127 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B13/08 ,  G11B2005/0021 ,  Y10T29/49025 ,  Y10T29/49032

Abstract: A method fabricating a near field transducer for a heat assisted magnetic recording head including forming a peg region of a near field transducer along a first portion of a substrate of a heat assisted magnetic recording head, removing a first portion of the peg region, fabricating a barrier material along a surface of the peg region created by the removal of the first portion of the peg region; and forming an enlarged region adjacent the surface such that the barrier material is disposed at least between the surface of the peg region and the enlarged region.

Abstract translation: 一种制造用于热辅助磁记录头的近场换能器的方法，包括沿着热辅助磁记录头的基底的第一部分形成近场换能器的钉区，去除钉区的第一部分， 通过去除所述钉区域的第一部分而产生的沿着所述钉带区域的表面的阻挡材料; 并且形成邻近所述表面的扩大区域，使得所述阻挡材料至少设置在所述钉区域的表面和所述扩大区域之间。