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公开(公告)号:US09214167B2
公开(公告)日:2015-12-15
申请号:US13796951
申请日:2013-03-12
发明人: Wei Tian , Venkateswara Rao Inturi , Doug Lin , Huaqing Yin , Jiaoming Qiu
CPC分类号: G11B5/3176 , B81C1/00611 , B81C2201/0109 , C09K13/00 , C23F4/00 , G03F7/0041 , G11B5/1278 , G11B5/187 , G11B5/232 , G11B5/235 , G11B5/3109 , G11B5/3116 , G11B5/3143 , G11B5/3163
摘要: In accordance with one embodiment, an apparatus may be implemented that comprises a main pole layer of magnetic material, a non-magnetic gap layer of material above the main pole layer, an etched first sacrificial layer of material above the non-magnetic gap layer of material, and a second sacrificial layer of material above the etched first sacrificial layer of material.
摘要翻译: 根据一个实施例,可以实现一种装置,其包括磁性材料的主极层,主极层上方的材料的非磁性间隙层,在非磁性间隙层上方的蚀刻的第一牺牲层材料 材料,以及材料上方的蚀刻的第一牺牲层上方的材料的第二牺牲层。
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公开(公告)号:US09147407B2
公开(公告)日:2015-09-29
申请号:US13797165
申请日:2013-03-12
发明人: Wei Tian , Venkateswara Rao Inturi , Doug Lin , Huaqing Yin , Jiaoming Qiu
CPC分类号: G11B5/235 , G11B5/1278 , G11B5/187 , G11B5/23 , G11B5/232 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/332 , G11B5/6082 , Y10T428/115 , Y10T428/1193
摘要: In accordance with one embodiment, an apparatus includes a main pole layer of magnetic material; a second layer of magnetic material; a first gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; a second gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; wherein the second gap layer of non-magnetic material is disposed directly adjacent to the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. A method of manufacturing such a device is also described.
摘要翻译: 根据一个实施例,一种装置包括磁性材料的主极层; 第二层磁性材料; 设置在所述主极层和所述第二磁性材料层之间的非磁性材料的第一间隙层; 设置在主极层和第二磁性材料层之间的非磁性材料的第二间隙层; 其中所述非磁性材料的所述第二间隙层直接邻近所述第二磁性材料层设置。 根据一个实施例,这允许间隙用作第二层磁性材料的非磁性种子。 还描述了制造这种装置的方法。
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公开(公告)号:US20140272471A1
公开(公告)日:2014-09-18
申请号:US13797165
申请日:2013-03-12
发明人: Wei Tian , Venkateswara Rao Inturi , Doug Lin , Huaqing Yin , Jiaoming Qiu
IPC分类号: G11B5/33
CPC分类号: G11B5/235 , G11B5/1278 , G11B5/187 , G11B5/23 , G11B5/232 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/332 , G11B5/6082 , Y10T428/115 , Y10T428/1193
摘要: In accordance with one embodiment, an apparatus can be configured that includes a main pole layer of magnetic material; a second layer of magnetic material; a first gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; a second gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; and wherein the second gap layer of non-magnetic material is disposed directly adjacent to the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, a method of manufacturing such a device may also be utilized.
摘要翻译: 根据一个实施例,可以构造一种装置,其包括磁性材料的主极层; 第二层磁性材料; 设置在所述主极层和所述第二磁性材料层之间的非磁性材料的第一间隙层; 设置在主极层和第二磁性材料层之间的非磁性材料的第二间隙层; 并且其中所述非磁性材料的所述第二间隙层直接邻近所述第二磁性材料层设置。 根据一个实施例,这允许间隙用作第二层磁性材料的非磁性种子。 根据一个实施例,这允许间隙用作第二层磁性材料的非磁性种子。 根据一个实施例,还可以使用制造这种装置的方法。
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公开(公告)号:US20140268415A1
公开(公告)日:2014-09-18
申请号:US13796951
申请日:2013-03-12
发明人: Wei Tian , Venkateswara Rao Inturi , Doug Lin , Huaqing Yin , Jiaoming Qiu
CPC分类号: G11B5/3176 , B81C1/00611 , B81C2201/0109 , C09K13/00 , C23F4/00 , G03F7/0041 , G11B5/1278 , G11B5/187 , G11B5/232 , G11B5/235 , G11B5/3109 , G11B5/3116 , G11B5/3143 , G11B5/3163
摘要: In accordance with one embodiment, a method may be implemented by depositing a non-magnetic gap layer of material above a main pole layer of magnetic material; depositing a sacrificial layer of material above the non-magnetic gap layer of material; etching a portion of the sacrificial layer of material while not entirely removing the sacrificial layer of material; and depositing additional sacrificial material to the etched sacrificial layer.
摘要翻译: 根据一个实施例,可以通过在磁性材料的主极层之上沉积材料的非磁隙层来实现一种方法; 在材料的非磁隙层之上沉积材料牺牲层; 在不完全去除材料的牺牲层的同时蚀刻材料的牺牲层的一部分; 以及将另外的牺牲材料沉积到蚀刻的牺牲层。
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