公开(公告)号：US20210090774A1

公开(公告)日：2021-03-25

申请号：US16990107

申请日：2020-08-11

Applicant: Seagate Technology LLC

Inventor： Sarbeswar Sahoo ,  Meng Zhu ,  Michael C. Kautzky ,  Gregory Girolami ,  John Abelson ,  Pengyi Zhang ,  Shaista Babar

IPC: H01F10/14 ,  G11B5/73 ,  H01F10/16 ,  H01F41/22 ,  G11B5/65 ,  G11B5/84 ,  G11B5/85

Abstract: Methods of forming a layer of magnetic material on a substrate, the method including: configuring a substrate in a chamber; controlling the temperature of the substrate at a substrate temperature, the substrate temperature being at or below about 250° C.; and introducing one or more precursors into the chamber, the one or more precursors including: cobalt (Co), nickel (Ni), iron (Fe), or combinations thereof, wherein the precursors chemically decompose at the substrate temperature, and wherein a layer of magnetic material is formed on the substrate, the magnetic material including at least a portion of the one or more precursors, and the magnetic material having a magnetic flux density of at least about 1 Tesla (T).