公开(公告)号：US09164830B2

公开(公告)日：2015-10-20

申请号：US14154859

申请日：2014-01-14

Applicant: Seagate Technology LLC

Inventor： Navneeth Kankani ,  Mark Allen Gaertner ,  Rodney Virgil Bowman ,  Ryan James Goss ,  David Scott Seekins ,  Tong Shirh Stone

IPC: H03M13/00 ,  G06F11/10 ,  G11C29/52

CPC classification number: G06F11/102 ,  G06F11/1012 ,  G11C29/52

Abstract: A first data set is written to first memory units identified as having a higher data reliability and a second data set is written to second memory units identified as having a lower data reliability than the first memory units. In some cases, the second data set may include metadata or redundancy information that is useful to aid in reading and/or decoding the first data set. The act of writing the second data set increases the data reliability of the first data set. The second data set may be a null pattern, such as all erased bits.

Abstract translation: 将第一数据集写入被识别为具有较高数据可靠性的第一存储器单元，并且将第二数据组写入被识别为具有比第一存储器单元更低的数据可靠性的第二存储器单元。 在一些情况下，第二数据集可以包括有助于读取和/或解码第一数据集的元数据或冗余信息。 写入第二数据集的动作增加了第一数据集的数据可靠性。 第二数据集可以是空模式，例如所有擦除位。

公开(公告)号：US20140129891A1

公开(公告)日：2014-05-08

申请号：US14154859

申请日：2014-01-14

Applicant: Seagate Technology LLC

Inventor： Navneeth Kankani ,  Mark Allen Gaertner ,  Rodney Virgil Bowman ,  Ryan James Goss ,  David Scott Seekins ,  Tong Shirh Stone

IPC: G06F11/10

CPC classification number: G06F11/102 ,  G06F11/1012 ,  G11C29/52

Abstract: A first data set is written to first memory units identified as having a higher data reliability and a second data set is written to second memory units identified as having a lower data reliability than the first memory units. In some cases, the second data set may include metadata or redundancy information that is useful to aid in reading and/or decoding the first data set. The act of writing the second data set increases the data reliability of the first data set. The second data set may be a null pattern, such as all erased bits.

Abstract translation: 将第一数据集写入被识别为具有较高数据可靠性的第一存储器单元，并且将第二数据组写入被识别为具有比第一存储器单元更低的数据可靠性的第二存储器单元。 在一些情况下，第二数据集可以包括有助于读取和/或解码第一数据集的元数据或冗余信息。 写入第二数据集的动作增加了第一数据集的数据可靠性。 第二数据集可以是空模式，例如所有擦除位。