公开(公告)号：US08780619B2

公开(公告)日：2014-07-15

申请号：US13934998

申请日：2013-07-03

Applicant: Seagate Technology LLC

Inventor： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

IPC: G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

Abstract: An apparatus and method for storing data in a semiconductor memory. In accordance with some embodiments, the semiconductor memory has a continuous storage layer of soft ferromagnetic material having opposing top and bottom surfaces with overall length and width dimensions and an overall thickness dimension between the opposing top and bottom surfaces. A plurality of spaced apart, discrete reference layers are adjacent a selected one of the opposing top or bottom surfaces of the continuous storage layer with each having a fixed magnetic orientation. A plurality of spaced apart, discrete barrier layers are disposed in contacting relation between the discrete reference layers and the continuous storage layer.

Abstract translation: 一种用于在半导体存储器中存储数据的装置和方法。 根据一些实施例，半导体存储器具有软铁磁材料的连续存储层，其具有相对的顶部和底部表面，其整体长度和宽度尺寸以及相对的顶部和底部表面之间的整体厚度尺寸。 多个间隔开的离散参考层与连续存储层的相对的顶表面或底表面中的所选择的一个相邻，每个具有固定的磁取向。 多个间隔开的离散阻挡层以离散参考层和连续存储层之间的接触关系设置。

公开(公告)号：US20130292784A1

公开(公告)日：2013-11-07

申请号：US13934998

申请日：2013-07-03

Applicant: Seagate Technology LLC

Inventor： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

Abstract: An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.

Abstract translation: 一种用于增强对诸如非易失性数据存储阵列中的磁存储元件的数据写入和保持的装置和方法。 根据各种实施例，可编程存储元件具有参考层和存储层。 参考层具有固定的磁性取向。 存储层被编程为具有与所述固定磁性取向反平行的磁性取向的第一区域和具有与所述固定磁性取向平行的磁性取向的第二区域。 可以将热辅助层结合到存储元件中以增强存储层的局部加热，以帮助在写入操作期间第一区域从平行转变为反平行磁取向。