公开(公告)号：US20070020839A1

公开(公告)日：2007-01-25

申请号：US11184337

申请日：2005-07-19

申请人： Seetharaman Sridhar ,  Craig Hall ,  Che-Jen Hu ,  Antonio Luis Rotondaro

发明人： Seetharaman Sridhar ,  Craig Hall ,  Che-Jen Hu ,  Antonio Luis Rotondaro

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： A semiconductor device is fabricated with a protective liner and/or layer. Well regions and isolation regions are formed within a semiconductor body. A gate dielectric layer is formed over the semiconductor body. A gate electrode layer, such as polysilicon, is formed on the gate dielectric layer. A protective gate liner is formed on the gate electrode layer. A resist mask is formed that defines gate structures. The gate electrode layer is patterned to form the gate structures. Offset spacers are formed on lateral edges of the gate structures and extension regions are then formed in the well regions. Sidewall spacers are then formed on the lateral edges of the gate structures. An NMOS protective region layer is formed that covers the NMOS region of the device. A recess etch is performed within the PMOS region followed by formation of strain inducing recess structures.

摘要翻译： 制造具有保护衬垫和/或层的半导体器件。 阱区和隔离区形成在半导体本体内。 栅电介质层形成在半导体本体上。 在栅极电介质层上形成诸如多晶硅的栅电极层。 在栅电极层上形成保护栅衬。 形成限定栅极结构的抗蚀剂掩模。 图案化栅极电极层以形成栅极结构。 偏移间隔件形成在栅极结构的横向边缘上，然后在阱区域中形成延伸区域。 然后在门结构的侧边缘上形成侧壁间隔物。 形成覆盖器件的NMOS区域的NMOS保护区域层。 在PMOS区域内执行凹陷蚀刻，随后形成应变引发凹陷结构。

公开(公告)号：US07514309B2

公开(公告)日：2009-04-07

申请号：US11184337

申请日：2005-07-19

申请人： Seetharaman Sridhar ,  Craig Hall ,  Che-Jen Hu ,  Antonio Luis Pacheco Rotondaro

发明人： Seetharaman Sridhar ,  Craig Hall ,  Che-Jen Hu ,  Antonio Luis Pacheco Rotondaro

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： A semiconductor device is fabricated with a protective liner and/or layer. Well regions and isolation regions are formed within a semiconductor body. A gate dielectric layer is formed over the semiconductor body. A gate electrode layer, such as polysilicon, is formed on the gate dielectric layer. A protective gate liner is formed on the gate electrode layer. A resist mask is formed that defines gate structures. The gate electrode layer is patterned to form the gate structures. Offset spacers are formed on lateral edges of the gate structures and extension regions are then formed in the well regions. Sidewall spacers are then formed on the lateral edges of the gate structures. An NMOS protective region layer is formed that covers the NMOS region of the device. A recess etch is performed within the PMOS region followed by formation of strain inducing recess structures.

摘要翻译： 制造具有保护衬垫和/或层的半导体器件。 阱区和隔离区形成在半导体本体内。 栅电介质层形成在半导体本体上。 在栅极电介质层上形成诸如多晶硅的栅电极层。 在栅电极层上形成保护栅衬。 形成限定栅极结构的抗蚀剂掩模。 图案化栅极电极层以形成栅极结构。 偏移间隔件形成在栅极结构的横向边缘上，然后在阱区域中形成延伸区域。 然后在门结构的侧边缘上形成侧壁间隔物。 形成覆盖器件的NMOS区域的NMOS保护区域层。 在PMOS区域内执行凹陷蚀刻，随后形成应变引发凹陷结构。

公开(公告)号：US20080283935A1

公开(公告)日：2008-11-20

申请号：US11750713

申请日：2007-05-18

申请人： Seetharaman Sridhar ,  Craig Hall

发明人： Seetharaman Sridhar ,  Craig Hall

IPC分类号： H01L21/336 ,  H01L21/76 ,  H01L29/06 ,  H01L29/94

CPC分类号： H01L21/823878 ,  H01L21/76232

摘要： The disclosure provides a trench isolation structure, a semiconductor device, and a method for manufacturing a semiconductor device. The semiconductor device, in one embodiment, includes a substrate having a first device region and a second device region, wherein the first device region includes a first gate structure and first source/drain regions and the second device region includes a second gate structure and second source/drain regions. The semiconductor device further includes a trench isolation structure configured to isolate the first device region from the second device region, the trench isolation structure comprising: 1) an isolation trench located within the substrate, wherein the isolation trench includes an opening portion and a bulbous portion, and further wherein a maximum width of the opening portion is less than a maximum width of the bulbous portion, and 2) dielectric material substantially filling the isolation trench.

摘要翻译： 本公开提供了沟槽隔离结构，半导体器件以及半导体器件的制造方法。 在一个实施例中，半导体器件包括具有第一器件区域和第二器件区域的衬底，其中第一器件区域包括第一栅极结构和第一源极/漏极区域，并且第二器件区域包括第二栅极结构和第二栅极结构 源/漏区。 所述半导体器件还包括被配置为将所述第一器件区域与所述第二器件区域隔离的沟槽隔离结构，所述沟槽隔离结构包括：1）位于所述衬底内的隔离沟槽，其中所述隔离沟槽包括开口部分和球形部分 并且其中所述开口部分的最大宽度小于所述球形部分的最大宽度，以及2）绝缘材料基本上填充所述隔离沟槽。

公开(公告)号：US20080248640A1

公开(公告)日：2008-10-09

申请号：US11732969

申请日：2007-04-05

申请人： Yiming Gu ,  Gary Zhang ,  Craig Hall

发明人： Yiming Gu ,  Gary Zhang ,  Craig Hall

IPC分类号： H01L21/3205

CPC分类号： H01L21/28123 ,  H01L21/28035 ,  H01L21/32139

摘要： Semiconductor devices and fabrication methods are provided, in which gate defects associated with photoresist stress after plasma trim/etch are substantially reduced. The method comprises forming a gate dielectric layer above a semiconductor body substrate; coating the gate dielectric layer with a photoresist coating; exposing and developing the photoresist coating; performing a resist annealing; and trimming and etching the photoresist coating.

摘要翻译： 提供了半导体器件和制造方法，其中与等离子体修整/蚀刻之后的光致抗蚀剂应力相关的栅极缺陷显着降低。 该方法包括在半导体本体基板上形成栅极电介质层; 用光致抗蚀剂涂层涂覆栅介质层; 曝光和显影光刻胶涂层; 进行抗蚀剂退火; 并修整和蚀刻光刻胶涂层。

公开(公告)号：US08076158B2

公开(公告)日：2011-12-13

申请号：US12115210

申请日：2008-05-05

申请人： Craig Hall

发明人： Craig Hall

IPC分类号： G01N1/06

CPC分类号： G01N1/2813 ,  Y10T436/25

摘要： A method of preparing a thin section sample includes affixing the sample to a receptacle using an affixing media that includes a material having a thickness-sensitive characteristic. The sample may then be shaped to have an asymmetric cross-section. The method may further include reducing a thickness of the material until the thickness-sensitive material exhibits a change in an optical characteristic. The added material, which may be quartz, may exhibit a predetermined optical characteristic at a specified thickness and/or exhibit a change in an optical characteristic in response to a change in thickness. In one application, the method may include retrieving the sample from a subterranean formation. For instance, the sample may be retrieved from a gas shale formation.

摘要翻译： 制备薄片样品的方法包括使用包括具有厚度敏感特性的材料的固定介质将样品固定到容器。 然后将样品成形为具有不对称的横截面。 该方法还可以包括减小材料的厚度，直到厚度敏感材料表现出光学特性的变化。 添加的材料（其可以是石英）可以在特定厚度下表现出预定的光学特性和/或响应于厚度变化而表现出光学特性的变化。 在一个应用中，该方法可以包括从地层中检索样本。 例如，样品可以从气体页岩层中回收。

公开(公告)号：US20090272186A1

公开(公告)日：2009-11-05

申请号：US12115210

申请日：2008-05-05

申请人： Craig Hall

发明人： Craig Hall

IPC分类号： E21B49/00

CPC分类号： G01N1/2813 ,  Y10T436/25

摘要： A method of preparing a thin section sample includes affixing the sample to a receptacle using an affixing media that includes a material having a thickness-sensitive characteristic. The sample may then be shaped to have an asymmetric cross-section. The method may further include reducing a thickness of the material until the thickness-sensitive material exhibits a change in an optical characteristic. The added material, which may be quartz, may exhibit a predetermined optical characteristic at a specified thickness and/or exhibit a change in an optical characteristic in response to a change in thickness. In one application, the method may include retrieving the sample from a subterranean formation. For instance, the sample may be retrieved from a gas shale formation.

摘要翻译： 制备薄片样品的方法包括使用包括具有厚度敏感特性的材料的固定介质将样品固定到容器。 然后将样品成形为具有不对称的横截面。 该方法还可以包括减小材料的厚度，直到厚度敏感材料表现出光学特性的变化。 添加的材料（其可以是石英）可以在特定厚度下表现出预定的光学特性和/或响应于厚度变化而表现出光学特性的变化。 在一个应用中，该方法可以包括从地层中检索样本。 例如，样品可以从气体页岩层中回收。

公开(公告)号：US20060030660A1

公开(公告)日：2006-02-09

申请号：US11102246

申请日：2005-04-07

申请人： Archie Eschborn ,  Jack Rossate ,  Craig Hall ,  David Abecassis

发明人： Archie Eschborn ,  Jack Rossate ,  Craig Hall ,  David Abecassis

IPC分类号： C08L57/00 ,  C08L63/00

CPC分类号： C08J5/005 ,  B82Y30/00 ,  C08K3/34 ,  C08K2201/011 ,  F04D29/023 ,  F05D2300/43 ,  F05D2300/603

摘要： In one embodiment, the invention provides an air movement device having a matrix polymer and nanoparticles. In another embodiment, the invention provides a method of manufacturing an air movement device having dry-mixing about 30% to about 80% by weight matrix polymer and about 2% to about 15% by weight layered clay to form a dry mixture, extruding the mixture to form a polymer nanocomposite, and molding the polymer nanocomposite into an air movement device. In yet another embodiment, the invention provides an air movement device having about 30% to about 80% by weight polypropylene, about 3% to about 10% by weight layered clay, and about 1% to about 10% by weight maleic anhydride grafted polystyrene, wherein the air movement device has a UL 94 5VA flame retardant rating.

公开(公告)号：US20100279562A1

公开(公告)日：2010-11-04

申请号：US12702088

申请日：2010-02-08

申请人： Michael Fraser ,  Craig Hall ,  Nick Martushev

发明人： Michael Fraser ,  Craig Hall ,  Nick Martushev

IPC分类号： A63B31/11

CPC分类号： A63B31/11 ,  A43B5/08 ,  A63B2031/112

摘要： An apparatus includes an upper portion, a sole and a fin. The upper portion is configured to at least partially cover a foot. The sole is coupled to the upper portion and defines a cavity. The fin has a first portion and a second portion. The fin is movable between a first configuration and a second configuration. When in the first configuration, the fin is substantially within the cavity defined by the sole, and the first portion of the fin at least partially overlaps the second portion of the fin. When in the second configuration, the fin extends substantially outside the cavity defined by the sole.

摘要翻译： 一种装置包括上部，底部和翅片。 上部构造成至少部分地覆盖脚。 鞋底联接到上部并且限定空腔。 翅片具有第一部分和第二部分。 翅片可在第一配置和第二配置之间移动。 当处于第一构造时，翅片基本上在由鞋底限定的空腔内，并且翅片的第一部分至少部分地与翅片的第二部分重叠。 当处于第二构造时，翅片基本上在由鞋底限定的空腔的外部延伸。

公开(公告)号：US07658659B1

公开(公告)日：2010-02-09

申请号：US12182823

申请日：2008-07-30

申请人： Michael Fraser ,  Craig Hall ,  Nick Martushev

发明人： Michael Fraser ,  Craig Hall ,  Nick Martushev

IPC分类号： A63B31/08

CPC分类号： A63B31/11 ,  A43B5/08 ,  A63B2031/112

摘要： An apparatus includes an upper portion, a sole and a fin. The upper portion is configured to at least partially cover a foot. The sole is coupled to the upper portion and defines a cavity. The fin has a first portion and a second portion. The fin is movable between a first configuration and a second configuration. When in the first configuration, the fin is substantially within the cavity defined by the sole, and the first portion of the fin at least partially overlaps the second portion of the fin. When in the second configuration, the fin extends substantially outside the cavity defined by the sole.

摘要翻译： 一种装置包括上部，底部和翅片。 上部构造成至少部分地覆盖脚。 鞋底联接到上部并且限定空腔。 翅片具有第一部分和第二部分。 翅片可在第一配置和第二配置之间移动。 当处于第一构造时，翅片基本上在由鞋底限定的空腔内，并且翅片的第一部分至少部分地与翅片的第二部分重叠。 当处于第二构造时，翅片基本上在由鞋底限定的空腔的外部延伸。

公开(公告)号：US20100029152A1

公开(公告)日：2010-02-04

申请号：US12182823

申请日：2008-07-30

申请人： Michael Fraser ,  Craig Hall ,  Nick Martushev

发明人： Michael Fraser ,  Craig Hall ,  Nick Martushev

IPC分类号： A63B31/08

CPC分类号： A63B31/11 ,  A43B5/08 ,  A63B2031/112

摘要： An apparatus includes an upper portion, a sole and a fin. The upper portion is configured to at least partially cover a foot. The sole is coupled to the upper portion and defines a cavity. The fin has a first portion and a second portion. The fin is movable between a first configuration and a second configuration. When in the first configuration, the fin is substantially within the cavity defined by the sole, and the first portion of the fin at least partially overlaps the second portion of the fin. When in the second configuration, the fin extends substantially outside the cavity defined by the sole.

摘要翻译： 一种装置包括上部，底部和翅片。 上部构造成至少部分地覆盖脚。 鞋底联接到上部并且限定空腔。 翅片具有第一部分和第二部分。 翅片可在第一配置和第二配置之间移动。 当处于第一构造时，翅片基本上在由鞋底限定的空腔内，并且翅片的第一部分至少部分地与翅片的第二部分重叠。 当处于第二构造时，翅片基本上在由鞋底限定的空腔的外部延伸。