公开(公告)号：US20210024768A1

公开(公告)日：2021-01-28

申请号：US17040489

申请日：2018-12-18

Applicant: SEIKO EPSON CORPORATION

Inventor： Satoshi KIMURA ,  Masahiro YATAKE ,  Haruko TERAO ,  Mitsuhiro WADA

IPC: C09D11/54 ,  C09D11/322 ,  C09D11/107 ,  B41M5/00

Abstract: There are provided a printed film having an increased wet rub resistance and a printing method, an ink set, and a printing apparatus that can increase the wet rub resistance.
The printed film is formed on the surface of a non-water-absorbent or slightly water-absorbent printing medium and contains an organic solvent. The printed film satisfies the following relationship (A): 5≤IA/IMAX≤10  (A). In the relationship, IMAX is the maximum intensity of the secondary ions derived from the organic solvent, measured in the thickness direction from the uppermost surface of the printed film by time-of-flight secondary ion mass spectrometry (TOF-SIMS); and IA is the average intensity of the secondary ions derived from the organic solvent measured in the thickness direction from the uppermost surface of the printed film by time-of-flight secondary ion mass spectrometry (TOF-SIMS) in a period between 0.05×TMAX and 0.50×TMAX after the start of the measurement, wherein TMAX represents the flight time of the secondary ions when the intensity of the secondary ions reaches Imax.

公开(公告)号：US20160293827A1

公开(公告)日：2016-10-06

申请号：US15086620

申请日：2016-03-31

Applicant: Seiko Epson Corporation

Inventor： Tetsuya OTSUKI ,  Shiro MURAKAMI ,  Tomohiro ARAI ,  Mitsuhiro WADA ,  Hiroshi ITO ,  Manabu SHIRAKI ,  Manabu KONDO ,  Muneyoshi HAMA

IPC: H01L41/047 ,  H03H9/215 ,  H01L41/29 ,  C23C14/18 ,  C23C14/34

CPC classification number: H01L41/0477 ,  C23C14/0036 ,  C23C14/025 ,  C23C14/0641 ,  C23C14/185 ,  H01L41/29 ,  H03H9/02023 ,  H03H9/0509 ,  H03H9/0514 ,  H03H9/0519 ,  H03H9/0547 ,  H03H9/131 ,  H03H9/171 ,  H03H9/215

Abstract: An electronic device includes a base material, a first metal film disposed on the base material and containing nitrogen and chromium, and a second metal film disposed on the first metal film and containing gold. In the first metal film, the number of nitrogen atoms may be between 20% to 100% of the number of chromium atoms. Further, the distribution of nitrogen atoms in the first metal film is larger in a third region sandwiched between a first region on the base material side of the first metal film and a second region on the second metal film side than in the first region and in the second region.

Abstract translation: 电子设备包括基材，设置在基材上并含有氮和铬的第一金属膜和设置在第一金属膜上并含有金的第二金属膜。 在第一金属膜中，氮原子数可以是铬原子数的20％至100％。 此外，第一金属膜中的氮原子的分布在夹在第一金属膜的基材侧的第一区域和第二金属膜侧的第二区域之间的第三区域比在第一区域中分布更大， 第二个地区。