公开(公告)号：US20090142513A1

公开(公告)日：2009-06-04

申请号：US12352197

申请日：2009-01-12

申请人： Seishi MURAKAMI ,  Masaki Koizumi ,  Hiroaki Ashizawa ,  Masato Koizumi

发明人： Seishi MURAKAMI ,  Masaki Koizumi ,  Hiroaki Ashizawa ,  Masato Koizumi

IPC分类号： C23C16/513 ,  C23C16/44 ,  B05C11/00 ,  B08B5/00 ,  B08B6/00

CPC分类号： C23C16/08 ,  C23C16/4405

摘要： A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.

摘要翻译： 供给处理气体以在预定数量的晶片W上形成Ti基膜，同时将室1中的基座2的温度设定到预定温度。 之后，通过将作为清洗气体的Cl 2气体从淋浴喷头10排出到室1中来清洁不含晶片W的室1的内部。在该清洁期间，基座2，淋浴头10 ，并且独立地控制室1的壁部，使得基座2的温度不低于Cl 2气体的分解开始温度，并且喷淋头10的温度和室1的壁部分的温度不高 比分解开始温度高。

公开(公告)号：US20090211526A1

公开(公告)日：2009-08-27

申请号：US12434978

申请日：2009-05-04

申请人： Masayuki TANAKA ,  Kouzo KAI ,  Seishi MURAKAMI ,  Tetsuya MIYASHITA

发明人： Masayuki TANAKA ,  Kouzo KAI ,  Seishi MURAKAMI ,  Tetsuya MIYASHITA

IPC分类号： C23C16/54

CPC分类号： C23C16/45561 ,  C23C16/4412 ,  H01L21/28556 ,  H01L21/28562

摘要： The present invention relates to a processing apparatus for performing a film-deposition process or the like for an object to be processed (such as a semiconductor wafer) by means of a source gas and a reactive gas. The processing apparatus includes: a processing vessel (22) that contains therein an object to be processed (W); a source gas supply system (50) that selectively supplies a source gas into the processing vessel; a reactive gas supply system (52) that selectively supplies a reactive gas into the processing vessel; and a vacuum evacuating system (36) having vacuum pumps (44, 46), the system exhausting an atmosphere in the processing vessel to form a vacuum. The processing apparatus further includes: a source gas by-pass line (62) that selectively feeds the source gas into the vacuum evacuating system with the source gas bypassing the processing vessel; and a reactive gas by-pass line that selectively feeds the reactive gas to the vacuum evacuating system with the reactive gas bypassing the processing vessel. The source gas by-pass line (62) has a source gas escape prevention valve (X1) that prevents an escape of the source gas from the by-pass line into the vacuum evacuating system when the valve is in the closed condition. The reactive gas by-pass line (66) has a reactive gas escape prevention valve (Y1) that prevents an escape of the reactive gas from the by-pass line into the vacuum evacuating system when the valve is in the closed condition.

摘要翻译： 本发明涉及一种用于通过源气体和反应性气体对被处理物体（例如半导体晶片）进行成膜处理等的处理装置。 处理装置包括：处理容器（22），其中容纳有待处理物体（W）; 源气体供应系统（50），其选择性地将源气体供应到处理容器中; 反应气体供应系统（52），其选择性地将反应性气体供应到处理容器中; 和具有真空泵（44,46）的真空排气系统（36），所述系统排出处理容器中的气氛以形成真空。 所述处理装置还包括：源气体旁通管线（62），其选择性地将所述源气体进料到所述真空抽气系统中，所述源气体绕过所述处理容器; 以及反应气体旁通管线，其选择性地将反应气体输送到真空抽气系统，反应气体绕过处理容器。 源气体旁路管线（62）具有源气体排放防止阀（X1），其防止当气门处于关闭状态时源气体从旁路管线逸出到真空排气系统中。 反应性气体旁通管线（66）具有防止气体逸出防止阀（Y1），当阀处于关闭状态时，防止反应气体从旁路管线逸出到真空排气系统中。