公开(公告)号：US20140061816A1

公开(公告)日：2014-03-06

申请号：US14073565

申请日：2013-11-06

Applicant: SemEquip, Inc.

Inventor： Thomas N. Horsky ,  Dale C. Jacobson

IPC: H01L21/265 ,  H01L27/092 ,  H01L29/66 ,  H01L21/8238

CPC classification number: H01L21/26513 ,  H01J27/20 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/304 ,  H01L21/2658 ,  H01L21/3215 ,  H01L21/67213 ,  H01L21/823814 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/66575

Abstract: A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：向离子化室提供含有多个掺杂剂原子的分子，将所述分子电离成掺杂剂簇离子，用电场提取和加速掺杂剂簇离子，选择 通过质量分析获得所需的簇离子，通过后分析离子光学器件改变簇离子的最终注入能量，以及将掺杂剂簇离子注入到半导体衬底中。 通常，掺杂剂分子含有n个掺杂剂原子，其中n是大于10的整数。这种方法可以将掺杂剂剂量率增加到n次注入电流，每个掺杂剂原子能量的等效量为簇注入能量的1 / n倍 ，同时减少每个掺杂剂原子的电荷乘以因子n。