公开(公告)号：US09837248B2

公开(公告)日：2017-12-05

申请号：US14605404

申请日：2015-01-26

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Masahide Ooura ,  Daisuke Imai ,  Shiro Ninomiya

IPC: H01J37/317 ,  H01J37/30

CPC classification number: H01J37/3171 ,  H01J37/3002 ,  H01J2237/0206 ,  H01J2237/18 ,  H01J2237/304 ,  H01J2237/30472

Abstract: In an ion implantation apparatus, an interruption member interrupts an ion beam B in the middle of a beam line. A plasma shower device is provided at the downstream side of the interruption member in the beam line. A control unit causes the interruption member to interrupt the ion beam B during an ignition start period of the plasma shower device. The interruption member may be provided at the upstream side of at least one high-voltage electric field type electrode in the beam line. A gas supply unit may supply a source gas to the plasma shower device. The control unit may start the supply of the source gas from the gas supply unit after the ion beam B is interrupted by the interruption member.

公开(公告)号：US20170330756A1

公开(公告)日：2017-11-16

申请号：US15664554

申请日：2017-07-31

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01L21/22 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01L21/223 ,  F17C7/00 ,  H01J37/30

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

公开(公告)号：US09773973B2

公开(公告)日：2017-09-26

申请号：US14646443

申请日：2013-11-14

Applicant: CANON ANELVA CORPORATION

Inventor： Yoshimitsu Kodaira ,  Isao Takeuchi ,  Mihoko Nakamura

IPC: H01L21/3065 ,  H01L43/12 ,  H01J37/305

CPC classification number: H01L43/12 ,  H01J37/3056 ,  H01J2237/20214 ,  H01J2237/304 ,  H01L21/3065

Abstract: A production process in which in an element isolation process for a magnetoresistive effect element, a re-deposited film adhered to a side wall of the element is efficiently removed by ion beam etching. Ion beam etching is performed while a substrate located being inclined relative to the grid is rotated. In the ion beam etching, an energy amount of an ion beam entering from a direction in which a pattern groove formed on the substrate extends is increased larger than the energy amount of the ion beam entering from another direction by controlling a rotation speed of the substrate, and the re-deposited film adhered to the side wall of the magnetoresistive effect element formed on the substrate is efficiently removed by etching.

公开(公告)号：US09754786B2

公开(公告)日：2017-09-05

申请号：US14691904

申请日：2015-04-21

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01J27/22 ,  H01L21/22 ,  H01J37/08 ,  H01J37/317 ,  F17C7/00 ,  H01L21/265 ,  H01J37/30 ,  H01L21/223

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

公开(公告)号：US20170098525A1

公开(公告)日：2017-04-06

申请号：US15380649

申请日：2016-12-15

Applicant: Frederick A. Flitsch

Inventor： Frederick A. Flitsch

IPC: H01J37/244 ,  H01J37/317

CPC classification number: H01J37/244 ,  B82B3/00 ,  G03F9/00 ,  H01J9/022 ,  H01J37/06 ,  H01J37/08 ,  H01J37/20 ,  H01J37/248 ,  H01J37/317 ,  H01J37/3177 ,  H01J2237/1205 ,  H01J2237/20 ,  H01J2237/303 ,  H01J2237/304 ,  H01J2237/3174 ,  H01J2237/31759 ,  H01J2237/31798 ,  Y10T29/49004

Abstract: The present invention provides apparatus for an imaging system comprising a multitude of imaging elements upon a substrate. In some embodiments the substrate may be approximately round with a radius of approximately one inch. Various methods relating to using and producing an imaging system are discussed.

公开(公告)号：US09171725B2

公开(公告)日：2015-10-27

申请号：US14331092

申请日：2014-07-14

Applicant: Entegris, Inc.

Inventor： James J. Mayer ,  Richard S. Ray ,  Robert Kaim ,  Joseph D. Sweeney

IPC: H01L21/265 ,  H01L21/302 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01L21/2658 ,  C09K3/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/26506 ,  H01L21/302

Abstract: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

Abstract translation: 公开了同位素富集的硅前体组合物，用于离子注入以提高离子注入系统的性能，与相对于缺乏硅前体组合物的同位素富集的离子注入相关。 所述硅掺杂剂组合物包括在28Si，29Si和30Si中的至少一种中同位素富集的至少一种硅化合物，并且可以包括包括共同种类气体和稀释气体中的至少一种的补充气体。 描述了用于将离子注入机提供这种硅掺杂剂组合物的掺杂气体供应装置，以及包括这种掺杂剂气体供应装置的离子注入系统。

公开(公告)号：US20150136996A1

公开(公告)日：2015-05-21

申请号：US14549016

申请日：2014-11-20

Applicant: SEN Corporation

Inventor： Kouji Inada ,  Kouji Kato

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/21

CPC classification number: H01J37/304 ,  H01J37/04 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/08 ,  H01J2237/24535 ,  H01J2237/304 ,  H01J2237/30472 ,  H01J2237/31701

Abstract: A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.

Abstract translation: 用于离子注入机的束流调节器包括设置在离子束聚焦点或其附近的可变孔径装置。 可变孔径装置被配置为在焦点处调整垂直于离子束聚焦方向的方向上的离子束宽度，以便控制注入束电流。 可变孔径装置可以紧靠质量分析狭缝的下游设置。 束电流调节器可以设置有包括高能多级线性加速单元的高能离子注入机。

公开(公告)号：US09006691B2

公开(公告)日：2015-04-14

申请号：US13465221

申请日：2012-05-07

Applicant: Jun Yashima ,  Akihito Anpo

Inventor： Jun Yashima ,  Akihito Anpo

IPC: B82Y10/00 ,  H01J37/304 ,  H01J37/317 ,  B82Y40/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/304 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31776

Abstract: A charged particle beam writing apparatus includes a unit to divide a chip region into first data processing blocks, a unit to, in each block, extract a cell whose reference position is located in the block concerned from cells each including at least one figure pattern, a unit to, for each block, generate a first frame that surrounds the block concerned and the cell extracted, a unit to, for each first frame, divide the inside of the first frame concerned into mesh regions and calculate an area density of a figure pattern in each mesh, a unit to combine area densities of mesh regions which are overlapped with each other and between different first frames, a unit to calculate a dose of beam by using the area density, and a unit to write a pattern on a target workpiece by irradiating the beam of the dose calculated.

Abstract translation: 带电粒子束写入装置包括：将芯片区域划分为第一数据处理块的单元，在每个块中单元提取其参考位置位于相关块中的小区，每个小区包括至少一个图形模式， 对于每个块，单元产生围绕所涉及的块并且提取的单元的第一帧，对于每个第一帧的单元，将有关的第一帧的内部划分为网格区域并计算图形的面积密度 每个网格中的图案，用于组合彼此重叠并且在不同第一帧之间的网格区域的区域密度的单位，通过使用面积密度来计算光束的剂量的单元以及在目标上写入图案的单元 工件通过照射光束的剂量计算。

公开(公告)号：US20150075972A1

公开(公告)日：2015-03-19

申请号：US14456946

申请日：2014-08-11

Applicant: FEI Company

Inventor： Corey Senowitz

IPC: C23C14/30

CPC classification number: C23C14/30 ,  G01N1/32 ,  H01J37/3056 ,  H01J2237/208 ,  H01J2237/304 ,  H01J2237/31745

Abstract: An improved method of preparing a TEM sample. A sample is extracted from a work piece and attached to a probe for transport to a sample holder. The sample is attached to the sample holder using charged particle beam deposition, and mechanically separated from probe by moving the probe and the sample holder relative to each other, without severing the connection using a charged particle beam.

Abstract translation: 一种制备TEM样品的改进方法。 将样品从工件中取出并附着到探头上以运送到样品架上。 使用带电粒子束沉积将样品连接到样品架上，并且通过使探针和样品架相对于彼此移动而与探针机械分离，而不会使用带电粒子束而断开连接。

公开(公告)号：US20140326896A1

公开(公告)日：2014-11-06

申请号：US14338132

申请日：2014-07-22

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01J37/08 ,  H01J37/30

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

Abstract translation: 通过利用同位素富集的掺杂剂材料，或通过利用具有有效提供这种增强作用的补充气体的掺杂剂材料，离子注入系统和工艺，离子注入系统的离子源的性能和寿命得到增强。