公开(公告)号：US09391209B2

公开(公告)日：2016-07-12

申请号：US14024962

申请日：2013-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromichi Godo ,  Yasuyuki Arai ,  Satohiro Okamoto ,  Mari Terashima ,  Eriko Nishida ,  Junpei Sugao

IPC: H01L27/14 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606

Abstract: An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.

公开(公告)号：US08796682B2

公开(公告)日：2014-08-05

申请号：US13666153

申请日：2012-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya Sasagawa ,  Motomu Kurata ,  Hideaki Kuwabara ,  Mari Terashima

IPC: H01L29/12

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/41758 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78696

Abstract: To provide a highly reliable semiconductor device including a transistor using an oxide semiconductor. After a source electrode layer and a drain electrode layer are formed, an island-like oxide semiconductor layer is formed in a gap between these electrode layers so that a side surface of the oxide semiconductor layer is covered with a wiring, whereby light is prevented from entering the oxide semiconductor layer through the side surface. Further, a gate electrode layer is formed over the oxide semiconductor layer with a gate insulating layer interposed therebetween and impurities are introduced with the gate electrode layer used as a mask. Then, a conductive layer is provided on a side surface of the gate electrode layer in the channel length direction, whereby an Lov region is formed while maintaining a scaled-down channel length and entry of light from above into the oxide semiconductor layer is prevented.

Abstract translation: 提供包括使用氧化物半导体的晶体管的高度可靠的半导体器件。 在形成源电极层和漏电极层之后，在这些电极层之间的间隙中形成岛状氧化物半导体层，使得氧化物半导体层的侧表面被布线覆盖，从而防止光 通过侧面进入氧化物半导体层。 此外，在氧化物半导体层上形成栅极电极层，其间插入有栅极绝缘层，并且将杂质与用作掩模的栅极电极层一起引入。 然后，在栅极电极层的沟道长度方向的侧面上设置导电层，由此形成Lov区，同时保持按比例缩小的沟道长度，防止从上方入射到氧化物半导体层中的光。

公开(公告)号：US09196744B2

公开(公告)日：2015-11-24

申请号：US14448024

申请日：2014-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya Sasagawa ,  Motomu Kurata ,  Hideaki Kuwabara ,  Mari Terashima

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/41758 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78696

Abstract: To provide a highly reliable semiconductor device including a transistor using an oxide semiconductor. After a source electrode layer and a drain electrode layer are formed, an island-like oxide semiconductor layer is formed in a gap between these electrode layers so that a side surface of the oxide semiconductor layer is covered with a wiring, whereby light is prevented from entering the oxide semiconductor layer through the side surface. Further, a gate electrode layer is formed over the oxide semiconductor layer with a gate insulating layer interposed therebetween and impurities are introduced with the gate electrode layer used as a mask. Then, a conductive layer is provided on a side surface of the gate electrode layer in the channel length direction, whereby an Lov region is formed while maintaining a scaled-down channel length and entry of light from above into the oxide semiconductor layer is prevented.

Abstract translation: 提供包括使用氧化物半导体的晶体管的高度可靠的半导体器件。 在形成源电极层和漏电极层之后，在这些电极层之间的间隙中形成岛状氧化物半导体层，使得氧化物半导体层的侧表面被布线覆盖，从而防止光 通过侧面进入氧化物半导体层。 此外，在氧化物半导体层上形成栅极电极层，其间插入有栅极绝缘层，并且将杂质与用作掩模的栅极电极层一起引入。 然后，在栅极电极层的沟道长度方向的侧面上设置导电层，由此形成Lov区，同时保持按比例缩小的沟道长度，并且防止从上方进入到氧化物半导体层的光。