公开(公告)号：US20170358638A1

公开(公告)日：2017-12-14

申请号：US15669296

申请日：2017-08-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi MURAKAMI ,  Mitsuhiro ICHIJO ,  Taketomi ASAMI

IPC: H01L27/32 ,  H01L51/52 ,  H01L33/00 ,  H01L27/12 ,  H01L21/768

CPC classification number: H01L27/3258 ,  H01L21/7684 ,  H01L21/76841 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L33/0041 ,  H01L51/5221 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

公开(公告)号：US20130228784A1

公开(公告)日：2013-09-05

申请号：US13865504

申请日：2013-04-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi MURAKAMI ,  Mitsuhiro ICHIJO ,  Taketomi ASAMI

IPC: H01L33/00

CPC classification number: H01L27/3258 ,  H01L21/7684 ,  H01L21/76841 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L33/0041 ,  H01L51/5221 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

Abstract translation: 在使用阴极中含有碱土类金属的材料的情况下，担心从EL元件向所产生的TFT扩散杂质离子（如碱土类金属离子）扩散至产生的TFT TFT的特性变化。 因此，作为设置在TFT和EL元件之间的绝缘膜，含有不仅阻挡诸如碱土金属离子等杂质离子扩散的材料的膜，而且还积极地吸收杂质离子如碱土金属 离子。

公开(公告)号：US20160293684A1

公开(公告)日：2016-10-06

申请号：US15177470

申请日：2016-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi MURAKAMI ,  Mitsuhiro ICHIJO ,  Taketomi ASAMI

IPC: H01L27/32

CPC classification number: H01L27/3258 ,  H01L21/7684 ,  H01L21/76841 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L33/0041 ,  H01L51/5221 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

公开(公告)号：US20140346489A1

公开(公告)日：2014-11-27

申请号：US14454092

申请日：2014-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi MURAKAMI ,  Mitsuhiro ICHIJO ,  Taketomi ASAMI

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L21/7684 ,  H01L21/76841 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L33/0041 ,  H01L51/5221 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

Abstract translation: 在使用阴极中含有碱土类金属的材料的情况下，担心从EL元件向所产生的TFT扩散杂质离子（如碱土类金属离子）扩散至产生的TFT TFT的特性变化。 因此，作为设置在TFT和EL元件之间的绝缘膜，含有不仅阻挡诸如碱土金属离子等杂质离子扩散的材料的膜，而且还积极地吸收杂质离子如碱土金属 离子。