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公开(公告)号：US20190378861A1
公开(公告)日：2019-12-12
申请号：US16445475
申请日：2019-06-19
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Satoshi MURAKAMI , Masahiko HAYAKAWA , Shunpei YAMAZAKI
IPC: H01L27/12 , H01L29/786 , H01L23/31 , H01L29/417 , H01L29/423 , G02F1/1362 , H01L27/32 , H01L29/66 , H01L23/498 , G02F1/1335 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/1343 , G02F1/1368
Abstract: A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
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公开(公告)号：US20170358638A1
公开(公告)日：2017-12-14
申请号：US15669296
申请日：2017-08-04
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Satoshi MURAKAMI , Mitsuhiro ICHIJO , Taketomi ASAMI
IPC: H01L27/32 , H01L51/52 , H01L33/00 , H01L27/12 , H01L21/768
CPC classification number: H01L27/3258 , H01L21/7684 , H01L21/76841 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L33/0041 , H01L51/5221 , H01L51/5253 , H01L2227/323 , H01L2924/0002 , H01L2924/00
Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.
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公开(公告)号：US20160322400A1
公开(公告)日：2016-11-03
申请号：US15207191
申请日：2016-07-11
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Satoshi MURAKAMI , Masahiko HAYAKAWA , Shunpei YAMAZAKI
IPC: H01L27/12 , G02F1/1362 , G02F1/1368 , G02F1/1337 , G02F1/1335 , G02F1/1341 , G02F1/1339 , H01L29/786 , G02F1/1343
CPC classification number: H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
Abstract: Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
Abstract translation: 提供一种半导体元件，包括：具有活性层的半导体; 与半导体接触的栅极绝缘膜; 通过所述栅极绝缘膜与所述有源层相对的栅电极; 形成在有源层上的第一氮化物绝缘膜; 形成在第一氮化物绝缘膜上的光敏有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线，其中在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，设置有第二开口部 在第一开口部内部具有栅极绝缘膜，第一氮化物绝缘膜和第二氮化物绝缘膜的层叠体中，半导体通过第一开口部和第二开口部与布线连接。
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公开(公告)号：US20150008440A1
公开(公告)日：2015-01-08
申请号：US14493686
申请日：2014-09-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Satoshi MURAKAMI , Shunpei YAMAZAKI , Jun KOYAMA , Mitsuaki OSAME , Yukio TANAKA , Yoshiharu HIRAKATA
IPC: H01L27/12 , H01L29/45 , H01L29/786
CPC classification number: H01L27/1244 , G02F1/13454 , G02F1/136213 , H01L27/1255 , H01L27/1259 , H01L27/15 , H01L29/458 , H01L29/66757 , H01L29/786 , H01L29/78645 , H01L29/78675 , H01L31/02164
Abstract: An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15V/min, there is no wrap around on the electrode, and film peeling can be prevented.
Abstract translation: 本发明的目的是提供一种具有高操作特性和可靠性的半导体器件。 所采取的措施是：在有机树脂膜上包含阳极氧化膜的电极，电极的阳极氧化膜和上面的像素电极之间形成像素电容器。 由于阳极氧化膜以15V /分钟的单位时间的施加电压进行阳极氧化，所以在电极上没有卷绕，可以防止膜剥离。
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公开(公告)号：US20130228784A1
公开(公告)日：2013-09-05
申请号：US13865504
申请日：2013-04-18
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Satoshi MURAKAMI , Mitsuhiro ICHIJO , Taketomi ASAMI
IPC: H01L33/00
CPC classification number: H01L27/3258 , H01L21/7684 , H01L21/76841 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L33/0041 , H01L51/5221 , H01L51/5253 , H01L2227/323 , H01L2924/0002 , H01L2924/00
Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.
Abstract translation: 在使用阴极中含有碱土类金属的材料的情况下，担心从EL元件向所产生的TFT扩散杂质离子（如碱土类金属离子）扩散至产生的TFT TFT的特性变化。 因此，作为设置在TFT和EL元件之间的绝缘膜，含有不仅阻挡诸如碱土金属离子等杂质离子扩散的材料的膜，而且还积极地吸收杂质离子如碱土金属 离子。
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Patent Agency Ranking
公开(公告)号：US20170054934A1
公开(公告)日：2017-02-23
申请号：US15346947
申请日：2016-11-09
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Satoshi MURAKAMI , Motomu KURATA , Hiroyuki HATA , Mitsuhiro ICHIJO , Takashi OHTSUKI , Aya ANZAI , Masayuki SAKAKURA
CPC classification number: H04N5/655 , G06F3/02 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3258 , H01L27/3276 , H01L33/60 , H01L51/0005 , H01L51/5246 , H01L51/56 , H01L2224/4847 , H01L2227/323 , H01L2251/5323 , H04N5/642
Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
Abstract translation: 本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。 根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。 布线等形成为与绝缘层接触，从而增强布线等的覆盖。 此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。 由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。
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公开(公告)号：US20150108515A1
公开(公告)日：2015-04-23
申请号：US14588771
申请日：2015-01-02
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD
Inventor： Shunpei YAMAZAKI , Satoshi MURAKAMI , Mitsuaki OSAME
CPC classification number: H01L27/1248 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L29/4958 , H01L29/4966 , H01L29/78645 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
Abstract: Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided.
Abstract translation: 公开了一种结合了显示装置的显示装置和电子装置。 显示装置包括晶体管和晶体管上的平坦化膜。 平坦化膜具有边缘部分为圆形的开口。 显示装置还包括在平坦化膜上的第一电极和在第一电极上的有机树脂膜。 有机树脂膜也具有边缘部分为圆形的开口。 有机树脂膜位于平坦化膜的开口内。 第一电极和晶体管通过导电膜彼此电连接。 第一电极与导电膜的顶表面接触。 在第一电极上设置有发光部件和第二电极。
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公开(公告)号：US20130157398A1
公开(公告)日：2013-06-20
申请号：US13755614
申请日：2013-01-31
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Masahiko HAYAKAWA , Satoshi MURAKAMI , Shunpei YAMAZAKI , Kengo AKIMOTO
IPC: H01L33/44
CPC classification number: H01L33/44 , H01L27/12 , H01L27/1248 , H01L27/1288 , H01L29/78621 , H01L2924/0002 , H01L2924/00
Abstract: To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.
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公开(公告)号：US20130134401A1
公开(公告)日：2013-05-30
申请号：US13731129
申请日：2012-12-31
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Satoshi MURAKAMI , Hisashi Ohtani , Shunpei Yamazaki
IPC: H01L51/52
CPC classification number: H01L51/5246 , H01L27/3225 , H01L27/3244 , H01L27/3246 , H01L27/3276 , H01L27/3295 , H01L27/3297 , H01L51/0005 , H01L51/5203 , H01L51/5237 , H01L51/525 , H01L51/5253 , H01L51/56 , H01L2251/5323
Abstract: It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished.
Abstract translation: 本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。 在本发明中，在像素电极上形成间隔物，从而在形成电致发光层时保护像素电极层免受掩模的影响。 此外，由于包含具有透水性的有机材料的层被密封在具有密封材料的显示装置中，并且密封材料和包含有机材料的层不接触，所以发光元件的劣化由于 可以防止诸如水的污染物。 密封材料形成在显示装置中的驱动电路区域的一部分中，因此也可以实现显示装置的较窄的边缘。
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公开(公告)号：US20220077199A1
公开(公告)日：2022-03-10
申请号：US17401360
申请日：2021-08-13
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME
IPC: H01L27/12 , G02F1/1362 , H01L27/32 , H01L33/52
Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic is insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching, to expose an active layer of the TFT.
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