公开(公告)号：US10062790B2

公开(公告)日：2018-08-28

申请号：US15823680

申请日：2017-11-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yuta Endo ,  Yoko Tsukamoto

IPC: H01L29/12 ,  H01L21/36 ,  H01L29/10 ,  H01L21/84 ,  H01L31/036 ,  H01L31/0376 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/42392 ,  H01L29/78696

Abstract: To provide a miniaturized transistor having highly stable electrical characteristics. Furthermore, also in a semiconductor device including the transistor, high performance and high reliability are achieved. The transistor includes, over a substrate, a conductor, an oxide semiconductor, and an insulator. The oxide semiconductor includes a first region and a second region. The resistance of the second region is lower than that of the first region. The entire surface of the first region in the oxide semiconductor is surrounded in all directions by the conductor with the insulator interposed therebetween.

公开(公告)号：US11538940B2

公开(公告)日：2022-12-27

申请号：US16728423

申请日：2019-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yuta Endo ,  Yoko Tsukamoto

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/423

Abstract: To provide a miniaturized transistor having highly stable electrical characteristics. Furthermore, also in a semiconductor device including the transistor, high performance and high reliability are achieved. The transistor includes, over a substrate, a conductor, an oxide semiconductor, and an insulator. The oxide semiconductor includes a first region and a second region. The resistance of the second region is lower than that of the first region. The entire surface of the first region in the oxide semiconductor is surrounded in all directions by the conductor with the insulator interposed therebetween.

公开(公告)号：US12300752B2

公开(公告)日：2025-05-13

申请号：US16975309

申请日：2019-02-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kiyoshi Kato ,  Tomoaki Atsumi ,  Shuhei Nagatsuka ,  Hitoshi Kunitake ,  Yoko Tsukamoto

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: A semiconductor device in which an electrification phenomenon that leads to characteristic fluctuations, element deterioration, abnormality in shape, or dielectric breakdown is inhibited is provided.
The semiconductor device includes a first region and a second region over the same plane. The first region includes a transistor. The second region includes a dummy transistor. The transistor includes a first wiring layer, a semiconductor layer including an oxide and provided above the first wiring layer, a second wiring layer provided above the semiconductor layer, and a third wiring layer provided above the second wiring layer. The dummy transistor has the same area as one or more selected from the first wiring layer, the second wiring layer, the semiconductor layer, and the third wiring layer.

公开(公告)号：US10522691B2

公开(公告)日：2019-12-31

申请号：US16030928

申请日：2018-07-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yuta Endo ,  Yoko Tsukamoto

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/24 ,  H01L21/336 ,  H01L21/225 ,  H01L29/76 ,  H01L21/54 ,  H01L29/423

Abstract: To provide a miniaturized transistor having highly stable electrical characteristics. Furthermore, also in a semiconductor device including the transistor, high performance and high reliability are achieved. The transistor includes, over a substrate, a conductor, an oxide semiconductor, and an insulator. The oxide semiconductor includes a first region and a second region. The resistance of the second region is lower than that of the first region. The entire surface of the first region in the oxide semiconductor is surrounded in all directions by the conductor with the insulator interposed therebetween.

公开(公告)号：US09837546B2

公开(公告)日：2017-12-05

申请号：US15081129

申请日：2016-03-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yuta Endo ,  Yoko Tsukamoto

IPC: H01L29/12 ,  H01L21/36 ,  H01L29/10 ,  H01L21/84 ,  H01L31/036 ,  H01L31/0376 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/42392 ,  H01L29/78696

Abstract: To provide a miniaturized transistor having highly stable electrical characteristics. Furthermore, also in a semiconductor device including the transistor, high performance and high reliability are achieved. The transistor includes, over a substrate, a conductor, an oxide semiconductor, and an insulator. The oxide semiconductor includes a first region and a second region. The resistance of the second region is lower than that of the first region. The entire surface of the first region in the oxide semiconductor is surrounded in all directions by the conductor with the insulator interposed therebetween.