公开(公告)号：US20240063028A1

公开(公告)日：2024-02-22

申请号：US18022625

申请日：2021-08-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Shunichi ITO ,  Yoshihiro KAMATSU ,  Shinobu KAWAGUCHI ,  Shinya SASAGAWA

IPC: H01L21/477 ,  H01L21/02

CPC classification number: H01L21/477 ,  H01L21/02345 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02554 ,  H01L21/02181 ,  H01L21/02565 ,  H01L21/02631

Abstract: A semiconductor device in which variation in characteristics is small is provided. A first insulator is formed; a first insulator is formed; a conductor is formed over the first insulator; a second insulator is formed over the conductor; a third insulator is formed over the second insulator; an oxide is formed over the third insulator; first heat treatment is performed; and second heat treatment following the first heat treatment is performed. The temperature of the first heat treatment is lower than the temperature of the second heat treatment.