公开(公告)号：US20210217898A1

公开(公告)日：2021-07-15

申请号：US17154199

申请日：2021-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinari Higaki ,  Masayuki SAKAKURA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/417

Abstract: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

公开(公告)号：US10573757B2

公开(公告)日：2020-02-25

申请号：US16163052

申请日：2018-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinari Higaki ,  Masayuki Sakakura ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/417 ,  G02F1/1368 ,  H01L27/32

Abstract: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

公开(公告)号：US20130328050A1

公开(公告)日：2013-12-12

申请号：US13967645

申请日：2013-08-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinari Higaki ,  Masayuki Sakakura ,  Shunpei Yamazaki

IPC: H01L29/49

CPC classification number: H01L29/78669 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3248 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/786

Abstract: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

Abstract translation: 本发明的目的是在不增加布线的横截面积的情况下连接由两个不兼容的膜（ITO膜和铝膜）形成的布线，电极等，并且甚至实现更低的功率消耗 当屏幕尺寸变大时。 本发明提供一种两层结构，其包括具有比上层宽的宽度的上层和下层。 第一导电层由Ti或Mo形成，并且在第一导电层上形成具有低电阻的铝（纯铝）的第二导电层。 从上层的端部突出的下层的一部分与ITO结合。

公开(公告)号：US20200185534A1

公开(公告)日：2020-06-11

申请号：US16794694

申请日：2020-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinari Higaki ,  Masayuki Sakakura ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/417

Abstract: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

公开(公告)号：US09716180B2

公开(公告)日：2017-07-25

申请号：US15007916

申请日：2016-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinari Higaki ,  Masayuki Sakakura ,  Shunpei Yamazaki

IPC: G02F1/136 ,  H01L29/786 ,  H01L29/49 ,  H01L27/12 ,  H01L29/45 ,  H01L29/417 ,  G02F1/1368 ,  H01L27/32

CPC classification number: H01L29/78669 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3248 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/786

Abstract: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

公开(公告)号：US11482624B2

公开(公告)日：2022-10-25

申请号：US17154199

申请日：2021-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinari Higaki ,  Masayuki Sakakura ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/417 ,  G02F1/1368 ,  H01L27/32

Abstract: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

公开(公告)号：US09166202B2

公开(公告)日：2015-10-20

申请号：US14248817

申请日：2014-04-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Takeshi Noda ,  Yoshinari Higaki

IPC: H01L21/00 ,  H01L51/56 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L51/56 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/5271 ,  H01L51/5284 ,  H01L2251/56

Abstract: Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film.

Abstract translation: 公开了一种发光元件，在具有绝缘表面的基板上，包括与薄膜晶体管连接的第一电极和覆盖第一电极的端部的绝缘体，包含与第一电极接触的有机化合物的层， 第二电极与含有机化合物的层接触。 第一电极具有倾斜表面，并且倾斜表面反射来自含有机化合物的层的发射光。 此外，吸收外部光的吸光多层膜设置在被绝缘体覆盖的第一电极的部分上。 所述吸光性多层膜至少具有包含透光膜，膜部分吸收光和透光膜的三层结构。

公开(公告)号：US20140327078A1

公开(公告)日：2014-11-06

申请号：US14336333

申请日：2014-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinari Higaki ,  Masayuki Sakakura ,  Shunpei Yamazaki

IPC: H01L29/417 ,  H01L29/786

CPC classification number: H01L29/78669 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3248 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/786

Abstract: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

Abstract translation: 本发明的目的是在不增加布线的横截面积的情况下连接由两个不兼容的膜（ITO膜和铝膜）形成的布线，电极等，并且甚至实现更低的功率消耗 当屏幕尺寸变大时。 本发明提供一种两层结构，其包括具有比上层宽的宽度的上层和下层。 第一导电层由Ti或Mo形成，并且在第一导电层上形成具有低电阻的铝（纯铝）的第二导电层。 从上层的端部突出的下层的一部分与ITO结合。

公开(公告)号：US10903367B2

公开(公告)日：2021-01-26

申请号：US16794694

申请日：2020-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinari Higaki ,  Masayuki Sakakura ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/417 ,  G02F1/1368 ,  H01L27/32

Abstract: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

公开(公告)号：US09252227B2

公开(公告)日：2016-02-02

申请号：US14336333

申请日：2014-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinari Higaki ,  Masayuki Sakakura ,  Shunpei Yamazaki

IPC: G02F1/136 ,  H01L29/49 ,  H01L27/12 ,  H01L29/45 ,  H01L29/417 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/32

CPC classification number: H01L29/78669 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3248 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/786

Abstract: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.