公开(公告)号：US20240321997A1

公开(公告)日：2024-09-26

申请号：US18580537

申请日：2021-07-20

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Hailong YU ,  Xuezhen JING ,  Jinhui MENG

IPC分类号： H01L29/49 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/4966 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

摘要： A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes: providing a substrate, where gate structures are formed on the substrate, source-drain doped regions are formed in the substrate on two sides of each gate structure, and a bottom dielectric layer between adjacent gate structures is formed on the source-drain doped regions; forming liner metal layers in contact with the gate structures on top surfaces of the gate structures, where the liner metal layers are made of a pure metal; forming a top dielectric layer on the bottom dielectric layer to cover the liner metal layers; and forming gate plugs penetrating through the top dielectric layer and in contact with the liner metal layers using a first selective deposition process.

公开(公告)号：US20220077291A1

公开(公告)日：2022-03-10

申请号：US17446017

申请日：2021-08-26

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Hailong YU ,  Xuezhen JING ,  Hao ZHANG ,  Tiantian ZHANG ,  Jinhui MENG

IPC分类号： H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/768

摘要： A semiconductor structure and a fabrication method of the semiconductor structure are provided. The method includes providing a substrate, forming a first dielectric layer and a plurality of gate structures, forming source-drain doped regions, and forming a source-drain plug. The first dielectric layer covers surfaces of the gate structure, the source-drain doped region and the source-drain plug. The method also includes forming a first plug in the first dielectric layer, and forming a second dielectric layer on the first dielectric layer. The first plug is in contact with a top surface of one of the source-drain plug and the gate structure. The second dielectric layer covers the first plug. Further, the method includes forming a second plug material film in the first and second dielectric layers. The second plug material film is in contact with the top surface of one of the source-drain plug and the gate structure.