公开(公告)号：US11183395B2

公开(公告)日：2021-11-23

申请号：US16855059

申请日：2020-04-22

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Linlin Sun ,  Bo Su

IPC分类号： H01L21/311

摘要： A semiconductor device and its fabrication method are provided. The method includes forming a core layer on a first region of a base substrate layer; forming sidewall spacer layers on sidewalls of two sides of the core layer along a first direction; forming a filling layer on a second region between adjacent sidewall spacer layers which are arranged along the first direction; forming a first dividing trench in the filling layer on the second region to divide the filling layer along a second direction, where sidewalls of the first dividing trench, arranged along the first direction, expose corresponding sidewall spacer layers; forming a second dividing trench in the core layer to divide the core layer along the second direction; forming a second dividing layer in the second dividing trench when forming a first dividing layer in the first dividing trench; and removing the filling layer and the core layer.