利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.021 秒)

    Semiconductor structure and method for forming the same
    1.
    发明授权
    Semiconductor structure and method for forming the same 有权

    公开(公告)号：US11538685B2

    公开(公告)日：2022-12-27

    申请号：US16929809

    申请日：2020-07-15

    申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

    发明人： Xiamei Tang ,  Wei Shi ,  Tao Dou ,  Bo Su ,  Youcun Hu

    IPC分类号： H01L21/033

    摘要： A method of forming a semiconductor structure includes providing a to-be-etched layer, forming a core layer over the to-be-etched layer, the core layer including a first trench extending along a first direction, forming a sidewall spacer layer on a top surface of the core layer and on sidewalls and a bottom surface of the first trench, forming a block cut structure in the first trench after forming the sidewall spacer layer, and after forming the block cut structure, etching back the sidewall spacer layer until exposing the top surface of the core layer, thereby leaving a sidewall spacer on the sidewalls of the first trench. The block cut structure extends through the first trench along a second direction. The second direction and the first direction are different. The block cut structure includes a first block-cut layer and a second block-cut layer.

    Semiconductor device and fabrication method thereof
    2.
    发明授权
    Semiconductor device and fabrication method thereof 有权

    公开(公告)号：US11309420B2

    公开(公告)日：2022-04-19

    申请号：US16795864

    申请日：2020-02-20

    申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

    发明人： Haiyang Zhang ,  Bo Su

    IPC分类号： H01L29/78 ,  H01L21/3065 ,  H01L21/3213 ,  H01L29/66

    摘要： The present disclosure provides a semiconductor device and a fabrication method. The method includes: providing a substrate having fins and forming an initial gate structure across the fins, which covers a portion of a top surface and sidewall surfaces of the fins, and includes an initial first region and an initial second region on the initial first region. A bottom boundary of the initial second region is higher than the top surface of the fins, and a size of the initial first region is larger than a size of the initial second region. A first etching process is performed on sidewalls of the initial gate structure to form a gate structure, which includes a first region formed by etching the initial first region, and a second region formed by etching the initial second region. A size of the first region is smaller than a size of the second region.

    Semiconductor structure and method for forming the same
    4.
    发明授权
    Semiconductor structure and method for forming the same 有权

    公开(公告)号：US11605726B2

    公开(公告)日：2023-03-14

    申请号：US17226462

    申请日：2021-04-09

    申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

    发明人： Hansu Oh ,  Pengchong Li ,  Xuejie Shi ,  Yiyu Chen ,  Bo Su

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/78

    摘要： A semiconductor structure and a method for forming the same are provided. In one form, a forming method includes: providing a base, a gate structure, a source-drain doping region, and an interlayer dielectric layer; removing the gate structure located in an isolation region to form an isolation opening and expose the top and side walls of a fin located in the isolation region; performing first ion-doping on the fin under the isolation opening to form an isolation doped region, a doping type of the isolation doped region being different from a doping type of the source-drain doping region; and filling the isolation opening with an isolation structure after the doping, the isolation structure straddling the fin of the isolation region. In embodiments and implementations of the present disclosure, the isolation doped region is formed, a doping concentration of inversion ions in the fin of the isolation region can thus be increased, and a barrier of a P-N junction formed by the source-drain doping region and the fin of the isolation region can be increased accordingly, to prevent the device from generating a conduction current in the fin of the isolation region during operation, thereby implementing isolation between the fin of the isolation region and the fin of other regions. Moreover, there is no need to perform a fin cut process. Hence the fin is made into a continuous structure, which helps prevent stress relief in the fin.

    Semiconductor device and fabrication method thereof
    5.
    发明授权
    Semiconductor device and fabrication method thereof 有权

    公开(公告)号：US11183395B2

    公开(公告)日：2021-11-23

    申请号：US16855059

    申请日：2020-04-22

    申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

    发明人： Linlin Sun ,  Bo Su

    IPC分类号： H01L21/311

    摘要： A semiconductor device and its fabrication method are provided. The method includes forming a core layer on a first region of a base substrate layer; forming sidewall spacer layers on sidewalls of two sides of the core layer along a first direction; forming a filling layer on a second region between adjacent sidewall spacer layers which are arranged along the first direction; forming a first dividing trench in the filling layer on the second region to divide the filling layer along a second direction, where sidewalls of the first dividing trench, arranged along the first direction, expose corresponding sidewall spacer layers; forming a second dividing trench in the core layer to divide the core layer along the second direction; forming a second dividing layer in the second dividing trench when forming a first dividing layer in the first dividing trench; and removing the filling layer and the core layer.