公开(公告)号：US20210020442A1

公开(公告)日：2021-01-21

申请号：US16929809

申请日：2020-07-15

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Xiamei TANG ,  Wei SHI ,  Tao DOU ,  Bo SU ,  Youcun HU

IPC分类号： H01L21/033

摘要： A method of forming a semiconductor structure includes providing a to-be-etched layer, forming a core layer over the to-be-etched layer, the core layer including a first trench extending along a first direction, forming a sidewall spacer layer on a top surface of the core layer and on sidewalls and a bottom surface of the first trench, forming a block cut structure in the first trench after forming the sidewall spacer layer, and after forming the block cut structure, etching back the sidewall spacer layer until exposing the top surface of the core layer, thereby leaving a sidewall spacer on the sidewalls of the first trench. The block cut structure extends through the first trench along a second direction. The second direction and the first direction are different. The block cut structure includes a first block-cut layer and a second block-cut layer.