公开(公告)号：US20220102205A1

公开(公告)日：2022-03-31

申请号：US17229255

申请日：2021-04-13

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： He ZUOPENG ,  Yang MING ,  Bei DUOHUI

IPC分类号： H01L21/768 ,  H01L21/033

摘要： A method for forming a semiconductor structure is provided. In one form, a method includes: providing a base; forming a pattern memory layer on the base, where at least a first trench and a second trench are provided on the pattern memory layer, where an extending direction of the first trench is parallel to an extending direction of the second trench, and the first trench and the second trench are formed using different masks; and forming mandrel lines separated on the base at positions of the base that correspond to the first trench and the second trench. By using the method, a problem that a photoresist peels off during etching due to an elongated shape when separated mandrel lines are directly formed can be avoided. Further, a problem of a relatively high requirement on a filling material when the mandrel lines are formed directly by using a plurality of photolithography processes can be avoided, to lower the requirement on the filling material.

公开(公告)号：US20210391173A1

公开(公告)日：2021-12-16

申请号：US17155483

申请日：2021-01-22

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Zhu CHEN ,  He ZUOPENG ,  Yang MING ,  Yao Dalin ,  Bei DUOHUI

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/768

摘要： The present disclosure provides a semiconductor structure and a forming method thereof. One form of a forming method includes: providing a base; forming a plurality of discrete mandrel layers on the base, where an extending direction of the mandrel layers is a first direction, and a direction perpendicular to the first direction is a second direction; forming a plurality of spacer layers covering side walls of the mandrel layers; forming a pattern transfer layer on the base, where the pattern transfer layer covers side walls of the spacer layers; forming a first trench in the pattern transfer layer between adjacent spacer layers in the second direction; removing a mandrel layer to form a second trench after the first trench is formed; and etching the base along the first trench and the second trench to form a target pattern by using the pattern transfer layer and the spacer layer as a mask. In the present disclosure, the accuracy of the pattern transfer is improved.

公开(公告)号：US20210398810A1

公开(公告)日：2021-12-23

申请号：US17155470

申请日：2021-01-22

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Zhu CHEN ,  Yang MING ,  Bei Duohui ,  Zuopeng HE ,  Chao Zhang ,  Ni BAI BING

IPC分类号： H01L21/033

摘要： A semiconductor structure and a method for forming the same are provided. The method includes: providing a base, a pattern transfer material layer being formed above the base; performing first ion implantation, to dope first ions into the pattern transfer material layer, to form first doped mask layers arranged in a first direction; forming first trenches in the pattern transfer material layer on two sides of the first doped mask layer in a second direction, to expose side walls of the first doped mask layer; forming mask spacers on side walls of the first trenches; performing second ion implantation, to dope second ions into some regions of the pattern transfer material layer that are exposed from the first doped mask layers and the first trenches, to form second doped mask layers; removing the remaining pattern transfer material layer, to form second trenches; and etching the base along the first trenches and the second trenches, to form a target pattern. The present disclosure improves the accuracy of pattern transfer.