公开(公告)号：US20030136431A1

公开(公告)日：2003-07-24

申请号：US10056706

申请日：2002-01-24

Applicant: Semitool, Inc.

Inventor： Dana Scranton ,  Steve Eudy

IPC: B08B001/04 ,  B08B003/00

CPC classification number: H01L21/67046 ,  B08B1/04 ,  B08B3/10 ,  H01L21/67028

Abstract: In a post chemical-mechanical polishing (CMP) procedure for cleaning a workpiece, a cleaning solution is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the workpiece. The cleaning solution is uniformly applied to the workpiece. The volumes of solutions used in the scrubbing process is reduced. A thin oxide layer is etched. A hydrophilic surface state is maintained. The workpiece is then rinsed and dried in a centrifugal processing between upper and lower rotors. A high level clean is achieved while consumption of rinsing and drying fluids is reduced.

Abstract translation: 在用于清洁工件的后期化学机械抛光（CMP）程序中，将清洁溶液输送到刷子的芯部，其中溶液被刷子吸收，然后通过刷子施加到工件上。 清洗液均匀地涂在工件上。 洗涤过程中使用的溶液体积减少。 蚀刻薄的氧化物层。 保持亲水表面状态。 然后在上下转子之间的离心加工中冲洗和干燥工件。 在消耗冲洗和干燥流体的同时，实现了高水平的清洁。