Abstract:
In a method for processing a workpiece to remove material from a first surface of the workpiece, steam is introduced onto the first surface under conditions so that at least some of the steam condenses and forms a liquid boundary layer on the first surface. The condensing steam helps to maintain the first surface of the workpiece at an elevated temperature. Ozone is provided around the workpiece under conditions where the ozone diffuses through the boundary layer and reacts with the material on the first surface. The temperature of the first surface is controlled to maintain condensation of the steam.
Abstract:
A processor for processing articles, such as semiconductor wafers, in a substantially clean atmosphere is set forth. The processor includes an enclosure defining a substantially enclosed clean processing chamber and at least one processing station disposed in the processing chamber. An interface section is disposed adjacent an interface end of the enclosure. The interface section includes at least one interface port through which a pod containing articles for processing are loaded or unloaded to or from the processor. The interface section is hygienically separated from the processing chamber since the interface section is generally not as clean as the highly hygienic processing chamber. An article extraction mechanism adapted to seal with the pod is employed. The mechanism is disposed to allow extraction of the articles contained within the pod into the processing chamber without exposing the articles to ambient atmospheric conditions in the interface section. The article processor also preferably includes an article insertion mechanism that is adapted to seal with a pod disposed in the interface section. The article insertion mechanism is disposed to allow insertion of the articles into the pod after processing by the at least one processing station. The article insertion mechanism allows the insertion of the articles without exposing the articles to ambient atmospheric conditions in the interface section.
Abstract:
A processor for cleaning, rinsing, and drying workpieces includes a process vessel, an ozone injection system for introducing ozone gas into the process vessel, a liquid injection system for introducing a processing fluid into the process vessel, and a drying system for delivering a drying fluid to the process vessel. The processing fluid is introduced into the process vessel such that the processing fluid lies beneath a workpiece. Ozone gas is introduced into the process vessel. The workpiece is then bathed in the processing fluid. A drying fluid is introduced into the process vessel while the processing fluid is evacuated from the process vessel. Microelectronic workpieces can be cleaned and dried in a single vessel, reducing the equipment and space used in manufacturing.
Abstract:
An electroplating apparatus includes a reactor vessel having a segmented anode array positioned therein for effecting electroplating of an associated workpiece such as a semiconductor wafer. The anode array includes a plurality of ring-like anode segments which are preferably positioned in concentric, coplanar relationship with each other. The anode segments can be independently operated to create varying electrical potentials with the associated workpiece to promote uniform deposition of electroplated metal on the surface of the workpiece.
Abstract:
A processor for rinsing and drying of semiconductor substrates includes a process vessel contained within an outer containment vessel. A diluted organic vapor creates a Marangoni effect flow along the surface of processing liquid contained within the process vessel. The process vessel includes porous walls that allow residual chemicals, organic species, and other unwanted materials to flow from the process vessel to the outer containment vessel. The porous walls allow for the maintenance of a stable surface tension gradient to sustain a consistent Marangoni force for even drying. Replacement processing fluid is preferably introduced to the process vessel to prevent the build up of organic species in the surface layer of the processing fluid.
Abstract:
A process system for processing a semiconductor wafer or other similar flat workpiece has a head including a workpiece holder. A motor in the head spins the workpiece. A head lifter lowers the head to move the workpiece into a bath of liquid in a bowl. Sonic energy is introduced into the liquid and travels through the liquid to the workpiece, to assist in processing. The head is lifted to bring the workpiece to a rinse position. The bath liquid is drained. The workpiece is rinsed via radial spray nozzles in the base. The head is lifted to a dry position. A reciprocating swing arm sprays a drying fluid onto the bottom surface of the spinning wafer, to dry the wafer.
Abstract:
An automated chemical management system for managing the chemical content of an electrochemical bath used to deposit a material on the surface of a microelectronic workpiece is set forth. The automated chemical management system includes a dosing system that is adapted to dose an amount of one or more chemicals to replenish a given electrochemical bath constituent in accordance with a predetermined dosing equation. The chemical management system also includes an analytical measurement system that is adapted to provide a measurement result indicative of the amount of the given constituent in the electrochemical bath at predetermined time intervals. The chemical management system uses the measurement results to modify the dosing equation of the dosing system. In this manner, the replenishment operations executed by the chemical management system are effectively refined over time thereby providing more accurate control of the amount of the target constituent in the electrochemical bath.
Abstract:
An apparatus for loading media carriers into a processing chamber, including a pivoting arm mechanism which accepts a carrier in at a lower position, locks it on the arm, and provides a power-assisted movement of the carrier lifting it into an upper position proximate the opening to the processing chamber, where the arm is locked in place, with the carrier then pushed along a ramp on the arm directly into the processing chamber.
Abstract:
In a system for cleaning a workpiece or wafer, a boundary layer of heated liquid is formed on the workpiece surface. Ozone is provided around the workpiece. The ozone diffuses through the boundary layer and chemically reacts with contaminants on the workpiece surface. A jet of high velocity heated liquid is directed against the workpiece, to physically dislodge or remove a contaminant from the workpiece. The jet penetrates through the boundary layer at the point of impact. The boundary layer otherwise remains largely undisturbed. Preferably, the liquid includes water, and may also include a chemical. Steam may also be jetted onto the workpiece, with the steam also physically removing contaminants, and also heating the workpiece to speed up chemical cleaning. The workpiece and the jet of liquid are moved relative to each other, so that substantially all areas of the workpiece surface facing the jet are exposed at least momentarily to the jet. Sonic or electromagnetic energy may also be introduced to the workpiece.
Abstract:
A processor for processing microelectronic workpieces includes a process vessel adapted to hold one or more microelectronic workpieces vertically within a rotatable fixture. A drive motor is coupled to the rotatable fixture to spin the rotatable fixture during processing. A processing fluid is introduced into the process vessel for processing of the microelectronic workpieces. The rotatable fixture is raised out of the processor for loading/unloading. The processor can be used to clean, plate, etch, strip, rinse, or dry microelectronic workpieces.