公开(公告)号：US10290760B2

公开(公告)日：2019-05-14

申请号：US16017492

申请日：2018-06-25

Applicant: SensL Technologies Ltd.

Inventor： Kevin Michael O'Neill ,  John Carlton Jackson ,  Liam Wall

IPC: G11C11/36 ,  G11C11/34 ,  H01L31/107 ,  H01L31/0224 ,  H01L27/144 ,  H01L31/18 ,  H01L31/02

Abstract: In one form, a process of manufacturing an avalanche photodiode includes forming an insulating layer over an active region of a semiconductor substrate. A shallow terminal of the avalanche photodiode is defined using a first patterned mask. A first dopant is implanted through the first patterned mask and the insulating layer to form the shallow terminal. The first patterned mask is removed. A deep terminal of the avalanche photodiode is defined using second patterned mask. A second dopant is implanted through the second patterned mask and insulating layer to form the deep terminal of the avalanche photodiode. A respective terminal of at least one of the shallow terminal and the deep terminal is defined using a respective patterned mask that forms at least two regions that are spatially separated from each other with no implanted structure located in a space therebetween.

公开(公告)号：US20180309012A1

公开(公告)日：2018-10-25

申请号：US16017492

申请日：2018-06-25

Applicant: SensL Technologies Ltd.

Inventor： Kevin Michael O'Neill ,  John Carlton Jackson ,  Liam Wall

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0224 ,  H01L27/144

CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L31/022408 ,  H01L31/1804

Abstract: In one form, a process of manufacturing an avalanche photodiode includes forming an insulating layer over an active region of a semiconductor substrate. A shallow terminal of the avalanche photodiode is defined using a first patterned mask. A first dopant is implanted through the first patterned mask and the insulating layer to form the shallow terminal. The first patterned mask is removed. A deep terminal of the avalanche photodiode is defined using second patterned mask. A second dopant is implanted through the second patterned mask and insulating layer to form the deep terminal of the avalanche photodiode. A respective terminal of at least one of the shallow terminal and the deep terminal is defined using a respective patterned mask that forms at least two regions that are spatially separated from each other with no implanted structure located in a space therebetween.

公开(公告)号：US10043936B1

公开(公告)日：2018-08-07

申请号：US15336368

申请日：2016-10-27

Applicant: SensL Technologies Ltd.

Inventor： Kevin Michael O'Neill ,  John Carlton Jackson ,  Liam Wall

IPC: G11C11/34 ,  G11C11/36 ,  H01L31/107 ,  H01L31/0224 ,  H01L31/028 ,  H01L27/144 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/18

Abstract: The present disclosure relates to an avalanche photodiode comprising a substrate having an active area. A first dopant implant in the active area forms one of an anode and the cathode of the avalanche photodiode. A second dopant implant in the active area forming the other one of the anode and the cathode of the avalanche photodiode, wherein at least one of the first and second dopant implants defines a discontinuous formation having at least one interruption.