Abstract:
Silicon photomultiplier circuitry is provided that comprises at least one silicon photomultiplier pixel, each pixel comprising a plurality of silicon photomultiplier microcells. The silicon photomultiplier circuitry comprises control circuitry adapted to maintain a substantially constant voltage on a connection node between microcells of the pixel. The control circuitry is adapted to minimise the onset and recovery time of an output signal by maintaining a substantially constant voltage on the connection node.
Abstract:
A LiDAR readout circuit is described. The readout circuit comprises an SiPM sensor for detecting photons and generating an SIPM analog output signal. A plurality of comparators are provided each having an associated threshold value and being configured to compare the SiPM analog output signal with their associated threshold value and generate a comparison signal. A time to digital converter is configured to receive the comparison signals from the plurality of comparators.
Abstract:
In one form, a process of manufacturing an avalanche photodiode includes forming an insulating layer over an active region of a semiconductor substrate. A shallow terminal of the avalanche photodiode is defined using a first patterned mask. A first dopant is implanted through the first patterned mask and the insulating layer to form the shallow terminal. The first patterned mask is removed. A deep terminal of the avalanche photodiode is defined using second patterned mask. A second dopant is implanted through the second patterned mask and insulating layer to form the deep terminal of the avalanche photodiode. A respective terminal of at least one of the shallow terminal and the deep terminal is defined using a respective patterned mask that forms at least two regions that are spatially separated from each other with no implanted structure located in a space therebetween.
Abstract:
The present disclosure relates to a semiconductor photomultiplier comprising an array of interconnected microcells; wherein the array comprises at least a first type of microcell having a first junction region of a first geometric shape; and a second type of microcell having a second junction region of a second geometric shape.
Abstract:
The present disclosure relates to a semiconductor photomultiplier comprising a a substrate; an array of photosensitive elements formed on a first major surface of the substrate; a plurality of primary bus lines interconnecting the photosensitive elements; at least one segmented secondary bus line provided on a second major surface of the substrate which is operably coupled to one or more terminals; and multiple vertical interconnect access (via) extending through the substrate operably coupling the primary bus lines to the at least one segmented secondary bus line.
Abstract:
A histogramming readout circuit is described. The readout circuit comprises a time to digital converter (TDC) configured to continually report time-stamps defining an arrival time of a laser clock and a signal output from a photosensor. Memory is provided for storing TDC events. A programmable processor is configured to implement a state machine. The state machine being operable to saves a time-stamp when a TDC event is detected; determine the time of flight of each of the photons detected by the photosensor; using each calculated time of flight to address a memory location; building up a histogram of the TDC data values using the memory locations as time-bins; maintaining a pointer to a maximum memory location where the highest number of TDC event resides. A calculator is operable to read the value of the maximum memory location and one or more adjacent time-bins either side for processing.
Abstract:
A semiconductor photomultiplier (SPM) device is described. The SPM comprises a plurality of photosensitive elements, a first electrode arranged to provide a bias voltage to the photosensitive elements, a second electrode arranged as a biasing electrode for the photosensitive elements, a plurality of quench resistive elements each associated with a corresponding photosensitive element, a plurality of output loads each having a capacitive load operably coupled to a resisitive load in a parallel configuration between first and second nodes; each first node is common to one of the photosensitive elements and the corresponding quench element; and a third electrode coupled to the second nodes of the output loads to provide an output signal from the photosensitive elements. The outputs loads fully or partially correct an overshoot of an output signal on the third electrode.
Abstract:
A semiconductor photomultiplier (SPM) device is described. The SPM comprises a plurality of photosensitive elements, a first electrode arranged to provide a bias voltage to the photosensitive elements, a second electrode arranged as a biasing electrode for the photosensitive elements, a plurality of quench resistive elements each associated with a corresponding photosensitive element, a plurality of output loads each having a capacitive load operably coupled to a resisitive load in a parallel configuration between first and second nodes; each first node is common to one of the photosensitive elements and the corresponding quench element; and a third electrode coupled to the second nodes of the output loads to provide an output signal from the photosensitive elements. The outputs loads fully or partially correct an overshoot of an output signal on the third electrode.
Abstract:
The present disclosure relates to a semiconductor photomultiplier comprising a substrate; an array of photosensitive cells formed on the substrate that are operably coupled between an anode and a cathode. A set of primary bus lines are provided each being associated with a corresponding set of photosensitive cells. A secondary bus line is coupled to the set of primary bus lines. An electrical conductor is provided having a plurality of connection sites coupled to respective connection locations on the secondary bus line for providing conduction paths which have lower impedance than the secondary bus line.
Abstract:
The present disclosure relates to a process of manufacturing a photomultiplier microcell. The process comprises providing an insulating layer over an active region; and implanting a dopant through the insulating layer to form a photosensitive diode in the active region. The insulating layer once formed is retained over the active region throughout the manufacturing process.