CMOS image sensor and a fabrication method for the same
    1.
    发明授权
    CMOS image sensor and a fabrication method for the same 有权
    CMOS图像传感器及其制造方法

    公开(公告)号:US06433373B1

    公开(公告)日:2002-08-13

    申请号:US09712195

    申请日:2000-11-15

    IPC分类号: H01L31062

    摘要: A CMOS image sensor and a fabrication method thereof are disclosed. The sensor has a photo diode region being extended to a lower portion of an active region in which a transfer gate, sensing gate and reset gate are formed and therefrom the sensitivity of the CMOS image sensor is enhanced. The sensor of the present invention includes a unit cell region having a first region and a second region adjacent to the first region, a PDN region having a first PDN region which is extended from the surface in the first region into the bulk in a direction perpendicular to the surface in an accompanying drawing and a second PDN region which is extended from the lower portion of the first PDN region into the lower portion of the second region in a horizontal direction in the accompanying drawing, and a floating diffusion region and a reset region which are formed in a surface of the second region above the second PDN region.

    摘要翻译: 公开了CMOS图像传感器及其制造方法。 传感器具有延伸到有源区的下部的光电二极管区,其中形成传输门,感测门和复位栅,从而增强了CMOS图像传感器的灵敏度。 本发明的传感器包括具有第一区域和邻近第一区域的第二区域的单元区域,具有第一PDN区域的PDN区域,该第一PDN区域从第一区域中的表面沿垂直方向延伸到体内 附图中的表面和从附图中的水平方向从第一PDN区域的下部延伸到第二区域的下部的第二PDN区域,以及浮动扩散区域和复位区域 其形成在第二PDN区域上方的第二区域的表面中。

    CMOS image sensor and a fabrication method for the same

    公开(公告)号:US06610557B2

    公开(公告)日:2003-08-26

    申请号:US10152043

    申请日:2002-05-22

    IPC分类号: H01L2100

    摘要: The present invention relates to a CMOS image sensor and a fabrication method thereof. The sensor has a photo diode region being extended to a lower portion of an active region in which a transfer gate, sensing gate and reset gate are formed and therefrom the sensitivity of the CMOS image sensor is enhanced. The sensor of the present invention includes a unit cell region having a first region and a second region adjacent to the first region, a PDN region having a first PDN region which is extended from the surface in the first region into the bulk in a direction perpendicular to the surface in an accompanying drawing and a second PDN region which is extended from the lower portion of the first PDN region into the lower portion of the second region in a horizontal direction in the accompanying drawing, and a floating diffusion region and a reset region which are formed in a surface of the second region above the second PDN region.

    Active pixel circuit in CMOS image sensor
    3.
    发明授权
    Active pixel circuit in CMOS image sensor 有权
    CMOS图像传感器中的有源像素电路

    公开(公告)号:US06570144B1

    公开(公告)日:2003-05-27

    申请号:US09722727

    申请日:2000-11-28

    IPC分类号: H01L2700

    CPC分类号: H04N5/374

    摘要: An active pixel circuit in a CMOS image sensor includes a photodiode to accumulate charge due to incident light. A first transfer transistor is arranged to pass a transfer signal when turned on by a column selection signal. A second transfer transistor transfers the accumulated charge from the photodiode to a first floating node when turned on by the transfer signal from the first transfer transistor. A source follow driver transistor changes the potential of a second floating node according to the charge transferred to the first floating node. A line selecting transistor reads out the potential of the second floating node when turned on by a line selection signal, and a reset transistor resets the charges accumulated in the first floating node when the reading out operation is finished.

    摘要翻译: CMOS图像传感器中的有源像素电路包括由入射光积累电荷的光电二极管。 第一传输晶体管被布置成当通过列选择信号导通时传递传输信号。 第二传输晶体管在通过来自第一传输晶体管的传输信号导通时将累积的电荷从光电二极管传送到第一浮动节点。 源跟随驱动器晶体管根据传送到第一浮动节点的电荷来改变第二浮动节点的电位。 线选择晶体管通过线选择信号读出第二浮动节点的电位,并且当读出操作结束时,复位晶体管复位在第一浮动节点中累积的电荷。

    Image sensor having micro lenses arranged in different ratios according to left side and right side ratios
    4.
    发明授权
    Image sensor having micro lenses arranged in different ratios according to left side and right side ratios 有权
    图像传感器具有根据左侧和右侧比例以不同比例布置的微透镜

    公开(公告)号:US07929212B2

    公开(公告)日:2011-04-19

    申请号:US11914346

    申请日:2006-06-08

    IPC分类号: G02B27/10

    摘要: There is provided an image sensor having micro lenses of which pitches decrease by different ratios according to left side and right side ratios, which are arranged in different ratios according to upper side and right side ratios, and of which pitches in the edge area are equal to a pixel pitch to arrange the micro lenses in a predetermined interval, thereby capable of preventing ambient sensitivity from deteriorating and suppressing crosstalk.There is also provided an image sensor having micro lenses arranged in different ratios according to left side, right side, upper side and lower side ratios, which has photodiodes arranged in a predetermined interval and micro lenses for overlapping upper portions of the photodiodes to focus light thereon, wherein the micro lenses, in a first area (which is an area from the center area of the photodiodes to before the edge area), are arranged in predetermined shift ratios according to a distance to +X and −X directions or/and +Y and −Y directions and, in a second area (the edge area), are arranged in a shift ratio equal to a shift ratio of the last pixel of the first area.Accordingly, the smaller pixel size become, the less the photodiodes take their area. Besides, the lower the heights of the micro lenses are, the more the angle of light incident on the photodiodes increases. As a result, it is possible to reduce crosstalk and increase an ambient light.

    摘要翻译: 提供一种具有微透镜的图像传感器,其具有根据左侧和右侧比例按照不同比例减小不同比例的微透镜,其按照上侧和右侧比例以不同的比例布置,并且边缘区域中的间距相等 到像素间距,以预定间隔布置微透镜,从而能够防止环境敏感性恶化和抑制串扰。 还提供了一种图像传感器,其具有根据左侧,右侧,上侧和下侧比以不同比例布置的具有预定间隔布置的光电二极管的微透镜和用于重叠光电二极管的上部的微透镜以聚焦光 其中,在第一区域(其是从光电二极管的中心区域到边缘区域之前的区域)的微透镜根据到+ X和-X方向的距离或/或 + Y和-Y方向,并且在第二区域(边缘区域)中以与第一区域的最后一个像素的偏移比相等的偏移比排列。 因此,像素尺寸越小,光电二极管的面积就越小。 此外,微透镜的高度越低,入射到光电二极管上的光的角度越大。 结果,可以减少串扰并增加环境光。

    Image Sensor Having Micro Lenses Arranged in Different Ratios According to Left Side and Right Side Ratios
    5.
    发明申请
    Image Sensor Having Micro Lenses Arranged in Different Ratios According to Left Side and Right Side Ratios 有权
    具有根据左侧和右侧比例以不同比例排列的微透镜的图像传感器

    公开(公告)号:US20080266667A1

    公开(公告)日:2008-10-30

    申请号:US11914346

    申请日:2005-06-09

    IPC分类号: G02B27/16

    摘要: There is provided an image sensor having micro lenses of which pitches decrease by different ratios according to left side and right side ratios, which are arranged in different ratios according to upper side and right side ratios, and of which pitches in the edge area are equal to a pixel pitch to arrange the micro lenses in a predetermined interval, thereby capable of preventing ambient sensitivity from deteriorating and suppressing crosstalk.There is also provided an image sensor having micro lenses arranged in different ratios according to left side, right side, upper side and lower side ratios, which has photodiodes arranged in a predetermined interval and micro lenses for overlapping upper portions of the photodiodes to focus light thereon, wherein the micro lenses, in a first area (which is an area from the center area of the photodiodes to before the edge area), are arranged in predetermined shift ratios according to a distance to +X and −X directions or/and +Y and −Y directions and, in a second area (the edge area), are arranged in a shift ratio equal to a shift ratio of the last pixel of the first area.Accordingly, the smaller pixel size become, the less the photodiodes take their area. Besides, the lower the heights of the micro lenses are, the more the angle of light incident on the photodiodes increases. As a result, it is possible to reduce crosstalk and increase an ambient light.

    摘要翻译: 提供一种具有微透镜的图像传感器,其具有根据左侧和右侧比例按照不同比例减小不同比例的微透镜,其按照上侧和右侧比例以不同的比例布置,并且边缘区域中的间距相等 到像素间距,以预定间隔布置微透镜,从而能够防止环境敏感性恶化和抑制串扰。 还提供了一种图像传感器,其具有根据左侧,右侧,上侧和下侧比以不同比例布置的具有预定间隔布置的光电二极管的微透镜和用于重叠光电二极管的上部的微透镜以聚焦光 其中,在第一区域(其是从光电二极管的中心区域到边缘区域之前的区域)的微透镜根据到+ X和-X方向的距离或/或 + Y和-Y方向,并且在第二区域(边缘区域)中以与第一区域的最后一个像素的偏移比相等的偏移比排列。 因此,像素尺寸越小,光电二极管的面积就越小。 此外,微透镜的高度越低,入射到光电二极管上的光的角度越大。 结果,可以减少串扰并增加环境光。