公开(公告)号：US20080129705A1

公开(公告)日：2008-06-05

申请号：US11930348

申请日：2007-10-31

申请人： Seong Hyun KIM ,  Yong Suk YANG ,  Jin Ho LEE

发明人： Seong Hyun KIM ,  Yong Suk YANG ,  Jin Ho LEE

IPC分类号： G06F3/045

CPC分类号： G06F3/016

摘要： Provided is a tactile and visual display device enabling visual information and tactile information to be simultaneously sensed. The tactile and visual display device includes: a display unit comprising a plurality of scan lines, a plurality of data lines and a plurality of pixels; a tactile sensation generator mounted over the display unit, transmitting light emitted from the pixels, comprising a transistor electrically connecting a plurality of corresponding pixels formed to correspond to the pixels with adjacent corresponding pixels, and generating an electrostatic force and a magnetostatic force; and a sensor in contact with the corresponding pixels to sense the generated electrostatic force or magnetostatic force. Accordingly, the texture of an image displayed on a display is provided as tactile information using an electrostatic force and a magnetostatic force, so that tactile information as well as visual information of the conventional display may be simultaneously provided.

摘要翻译： 提供了能够同时感测视觉信息和触觉信息的触觉和视觉显示装置。 触觉和视觉显示装置包括：显示单元，包括多条扫描线，多条数据线和多个像素; 触觉感觉发生器，其安装在所述显示单元上，透射从所述像素发射的光，所述触觉感觉发生器包括将形成为对应于所述像素的多个对应像素与相邻的相应像素电连接并产生静电力和静磁力的晶体管; 以及与相应的像素接触以感测所产生的静电力或静磁力的传感器。 因此，使用静电力和静磁力将显示器上显示的图像的纹理提供为触觉信息，从而可以同时提供触觉信息以及常规显示器的视觉信息。

公开(公告)号：US20090152537A1

公开(公告)日：2009-06-18

申请号：US12182577

申请日：2008-07-30

申请人： Seong Hyun KIM ,  Sang Chul LIM ,  Gi Heon KIM ,  Ji Ho YOUK ,  Tae Gon KIM

发明人： Seong Hyun KIM ,  Sang Chul LIM ,  Gi Heon KIM ,  Ji Ho YOUK ,  Tae Gon KIM

IPC分类号： H01L51/05 ,  C08J3/24

CPC分类号： H01L51/052 ,  H01L51/0545

摘要： Provided are a composition for an organic polymer gate insulating layer and an Organic Thin Film Transistor (OTFT) using the same. The composition includes an insulating organic polymer including at least one selected from the group consisting of polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), polyvinylpyrrolidone (PVP), poly(vinyl phenol) (PVPh) and a copolymer thereof, a crosslinking monomer having two or more double bonds, and a photoinitiator. The OTFT includes a gate insulating layer of a semi-interpenetrating polymer network formed of the composition.The composition for a photoreactive organic polymer gate insulating layer has a photochemical characteristic that enables micropatterning, and can be formed into a layer having excellent chemical resistance, thermal resistance, surface characteristics and electrical characteristics.

摘要翻译： 提供一种有机高分子栅极绝缘层和使用其的有机薄膜晶体管（OTFT）的组合物。 该组合物包括绝缘有机聚合物，其包括选自聚甲基丙烯酸甲酯（PMMA），聚乙烯醇（PVA），聚乙烯吡咯烷酮（PVP），聚（乙烯基苯酚）（PVPh）及其共聚物中的至少一种，具有两个 或更多双键，以及光引发剂。 OTFT包括由该组合物形成的半互穿聚合物网络的栅极绝缘层。 光反应性有机聚合物栅极绝缘层的组合物具有能够进行微图案化的光化学特性，并且可以形成为具有优异的耐化学性，耐热性，表面特性和电特性的层。

公开(公告)号：US20080080221A1

公开(公告)日：2008-04-03

申请号：US11834044

申请日：2007-08-06

申请人： Jae Bon KOO ,  Seong Hyun KIM ,  Kyung Soo SUH ,  Chan Hoe KU ,  Sang Chul LIM ,  Jung Hun LEE

发明人： Jae Bon KOO ,  Seong Hyun KIM ,  Kyung Soo SUH ,  Chan Hoe KU ,  Sang Chul LIM ,  Jung Hun LEE

IPC分类号： H02M7/537

CPC分类号： H01L27/281 ,  H01L27/283

摘要： Provided are a structure and fabricating method of a new inverter for controlling a threshold voltage of each location when an inverter circuit is manufactured using an organic semiconductor on a plastic substrate.In general, p-type organic semiconductor is stable. Accordingly, when the inverter is formed of only the p-type semiconductor, a D-inverter composed of a depletion load and an enhancement driver has large gains, wide swing width and low power consumption, which is more preferable than an E-inverter composed of an enhancement load and an enhancement driver. However, it is impossible to form a depletion transistor and an enhancement transistor on the same substrate while controlling them by locations.To overcome such a difficulty, the structure of the inverter in which a bottom gate organic semiconductor transistor showing enhancement type characteristics is used as a driver transistor, and a top gate organic semiconductor transistor showing depletion type characteristics is used as a load transistor, and a manufacturing method thereof are proposed. According to this structure, a passivation effect of an organic semiconductor may be additionally obtained by a second insulating layer and a second gate electrode material which are on top of the organic semiconductor, and a high degree of integration may also be improved.

摘要翻译： 提供了当在塑料基板上使用有机半导体制造逆变器电路时，用于控制每个位置的阈值电压的新型逆变器的结构和制造方法。 通常，p型有机半导体是稳定的。 因此，当逆变器仅由p型半导体构成时，由耗尽负载和增强型驱动器构成的D逆变器具有大的增益，宽的摆幅宽度和低功耗，这比组成的E型逆变器更优选 的增强负载和增强驱动器。 然而，不可能在相同的衬底上形成耗尽晶体管和增强晶体管，同时通过位置来控制它们。 为了克服这样的困难，将使用显示增强型特性的底栅有机半导体晶体管作为驱动晶体管的逆变器的结构和显示耗尽型特性的顶栅有机半导体晶体管用作负载晶体管，并且 提出了其制造方法。 根据该结构，可以通过位于有机半导体顶部的第二绝缘层和第二栅极电极材料另外获得有机半导体的钝化效果，并且还可以提高高集成度。

公开(公告)号：US20080135947A1

公开(公告)日：2008-06-12

申请号：US11931461

申请日：2007-10-31

申请人： Jae Bon KOO ,  Kyung Soo SUH ,  Seong Hyun KIM

发明人： Jae Bon KOO ,  Kyung Soo SUH ,  Seong Hyun KIM

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L27/283 ,  H01L51/0545

摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.

摘要翻译： 提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面被选择性地处理，或通过自组装单层处理选择性地施加。 因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。 也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。

公开(公告)号：US20070272948A1

公开(公告)日：2007-11-29

申请号：US11693830

申请日：2007-03-30

申请人： Jae Bon KOO ,  Seong Hyun KIM ,  Kyung Soo SUH ,  Sang Chul LIM ,  Jung Hun LEE ,  Chan Hoe KU

发明人： Jae Bon KOO ,  Seong Hyun KIM ,  Kyung Soo SUH ,  Sang Chul LIM ,  Jung Hun LEE ,  Chan Hoe KU

IPC分类号： H01L27/10 ,  H01L29/76

CPC分类号： H01L27/12 ,  H01L27/283 ,  H01L51/0554

摘要： Provided is an inverter having a new structure capable of easily controlling a threshold voltage according to position in fabricating an inverter circuit on a plastic substrate using an organic semiconductor. A driver transistor is formed with a dual-gate structure and a positive bias voltage is applied to the top gate of the driver transistor so that a body effect appears in the organic semiconductor. Accordingly, the threshold voltage is shifted to a negative zone due to positive potential applied to the top gate of the driver transistor so that the driver transistor acts as an enhancement type transistor. A dual-gate organic structure may be applied to a load transistor rather than the driver transistor, or a p-type dual-gate organic transistor structure may be applied to both the driver transistor and the load transistor. Lifespan of the device can be increased, reliability of the device can be improved, and an organic inverter can be provided in which characteristics of organic electronic elements are easily adjusted according to circuit design even after the organic electronic elements are fabricated.

摘要翻译： 提供一种逆变器，其具有能够根据使用有机半导体在塑料基板上制造逆变器电路时的位置容易地控制阈值电压的新结构。 驱动晶体管由双栅结构形成，正偏置电压施加到驱动晶体管的顶栅，从而在有机半导体中出现体效应。 因此，由于施加到驱动晶体管的顶栅极的正电位，阈值电压被转移到负区，使得驱动晶体管用作增强型晶体管。 双栅极有机结构可以施加到负载晶体管而不是驱动晶体管，或者p型双栅极有机晶体管结构可以施加到驱动晶体管和负载晶体管两者。 可以提高装置的寿命，可以提高装置的可靠性，并且可以提供有机逆变器，即使在有机电子元件制造之后，也可以根据电路设计容易地调整有机电子元件的特性。

公开(公告)号：US20110033971A1

公开(公告)日：2011-02-10

申请号：US12906457

申请日：2010-10-18

申请人： Jae Bon KOO ,  Kyung Soo SUH ,  Seong Hyun KIM

发明人： Jae Bon KOO ,  Kyung Soo SUH ,  Seong Hyun KIM

IPC分类号： H01L51/40

CPC分类号： H01L27/283 ,  H01L51/0545

摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.

摘要翻译： 提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。 因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。 也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。