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    INVERTER
    1.
    发明申请
    INVERTER 失效
    逆变器

    公开(公告)号：US20080080221A1

    公开(公告)日：2008-04-03

    申请号：US11834044

    申请日：2007-08-06

    申请人： Jae Bon KOO ,  Seong Hyun KIM ,  Kyung Soo SUH ,  Chan Hoe KU ,  Sang Chul LIM ,  Jung Hun LEE

    发明人： Jae Bon KOO ,  Seong Hyun KIM ,  Kyung Soo SUH ,  Chan Hoe KU ,  Sang Chul LIM ,  Jung Hun LEE

    IPC分类号： H02M7/537

    CPC分类号： H01L27/281 ,  H01L27/283

    摘要： Provided are a structure and fabricating method of a new inverter for controlling a threshold voltage of each location when an inverter circuit is manufactured using an organic semiconductor on a plastic substrate.In general, p-type organic semiconductor is stable. Accordingly, when the inverter is formed of only the p-type semiconductor, a D-inverter composed of a depletion load and an enhancement driver has large gains, wide swing width and low power consumption, which is more preferable than an E-inverter composed of an enhancement load and an enhancement driver. However, it is impossible to form a depletion transistor and an enhancement transistor on the same substrate while controlling them by locations.To overcome such a difficulty, the structure of the inverter in which a bottom gate organic semiconductor transistor showing enhancement type characteristics is used as a driver transistor, and a top gate organic semiconductor transistor showing depletion type characteristics is used as a load transistor, and a manufacturing method thereof are proposed. According to this structure, a passivation effect of an organic semiconductor may be additionally obtained by a second insulating layer and a second gate electrode material which are on top of the organic semiconductor, and a high degree of integration may also be improved.

    摘要翻译： 提供了当在塑料基板上使用有机半导体制造逆变器电路时，用于控制每个位置的阈值电压的新型逆变器的结构和制造方法。 通常，p型有机半导体是稳定的。 因此，当逆变器仅由p型半导体构成时，由耗尽负载和增强型驱动器构成的D逆变器具有大的增益，宽的摆幅宽度和低功耗，这比组成的E型逆变器更优选 的增强负载和增强驱动器。 然而，不可能在相同的衬底上形成耗尽晶体管和增强晶体管，同时通过位置来控制它们。 为了克服这样的困难，将使用显示增强型特性的底栅有机半导体晶体管作为驱动晶体管的逆变器的结构和显示耗尽型特性的顶栅有机半导体晶体管用作负载晶体管，并且 提出了其制造方法。 根据该结构，可以通过位于有机半导体顶部的第二绝缘层和第二栅极电极材料另外获得有机半导体的钝化效果，并且还可以提高高集成度。

    INVERTER WITH DUAL-GATE ORGANIC THIN-FILM TRANSISTOR
    2.
    发明申请
    INVERTER WITH DUAL-GATE ORGANIC THIN-FILM TRANSISTOR 审中-公开
    具有双栅有机薄膜晶体管的逆变器

    公开(公告)号：US20070272948A1

    公开(公告)日：2007-11-29

    申请号：US11693830

    申请日：2007-03-30

    申请人： Jae Bon KOO ,  Seong Hyun KIM ,  Kyung Soo SUH ,  Sang Chul LIM ,  Jung Hun LEE ,  Chan Hoe KU

    发明人： Jae Bon KOO ,  Seong Hyun KIM ,  Kyung Soo SUH ,  Sang Chul LIM ,  Jung Hun LEE ,  Chan Hoe KU

    IPC分类号： H01L27/10 ,  H01L29/76

    CPC分类号： H01L27/12 ,  H01L27/283 ,  H01L51/0554

    摘要： Provided is an inverter having a new structure capable of easily controlling a threshold voltage according to position in fabricating an inverter circuit on a plastic substrate using an organic semiconductor. A driver transistor is formed with a dual-gate structure and a positive bias voltage is applied to the top gate of the driver transistor so that a body effect appears in the organic semiconductor. Accordingly, the threshold voltage is shifted to a negative zone due to positive potential applied to the top gate of the driver transistor so that the driver transistor acts as an enhancement type transistor. A dual-gate organic structure may be applied to a load transistor rather than the driver transistor, or a p-type dual-gate organic transistor structure may be applied to both the driver transistor and the load transistor. Lifespan of the device can be increased, reliability of the device can be improved, and an organic inverter can be provided in which characteristics of organic electronic elements are easily adjusted according to circuit design even after the organic electronic elements are fabricated.

    摘要翻译： 提供一种逆变器，其具有能够根据使用有机半导体在塑料基板上制造逆变器电路时的位置容易地控制阈值电压的新结构。 驱动晶体管由双栅结构形成，正偏置电压施加到驱动晶体管的顶栅，从而在有机半导体中出现体效应。 因此，由于施加到驱动晶体管的顶栅极的正电位，阈值电压被转移到负区，使得驱动晶体管用作增强型晶体管。 双栅极有机结构可以施加到负载晶体管而不是驱动晶体管，或者p型双栅极有机晶体管结构可以施加到驱动晶体管和负载晶体管两者。 可以提高装置的寿命，可以提高装置的可靠性，并且可以提供有机逆变器，即使在有机电子元件制造之后，也可以根据电路设计容易地调整有机电子元件的特性。

    ORGANIC INVERTER INCLUDING SURFACE-TREATED LAYER AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    ORGANIC INVERTER INCLUDING SURFACE-TREATED LAYER AND METHOD OF MANUFACTURING THE SAME 失效
    包括表面处理层的有机逆变器及其制造方法

    公开(公告)号：US20110033971A1

    公开(公告)日：2011-02-10

    申请号：US12906457

    申请日：2010-10-18

    申请人： Jae Bon KOO ,  Kyung Soo SUH ,  Seong Hyun KIM

    发明人： Jae Bon KOO ,  Kyung Soo SUH ,  Seong Hyun KIM

    IPC分类号： H01L51/40

    CPC分类号： H01L27/283 ,  H01L51/0545

    摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.

    摘要翻译： 提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。 因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。 也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。

    ORGANIC INVERTER INCLUDING SURFACE-TREATED LAYER AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    ORGANIC INVERTER INCLUDING SURFACE-TREATED LAYER AND METHOD OF MANUFACTURING THE SAME 失效
    包括表面处理层的有机逆变器及其制造方法

    公开(公告)号：US20080135947A1

    公开(公告)日：2008-06-12

    申请号：US11931461

    申请日：2007-10-31

    申请人： Jae Bon KOO ,  Kyung Soo SUH ,  Seong Hyun KIM

    发明人： Jae Bon KOO ,  Kyung Soo SUH ,  Seong Hyun KIM

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L27/283 ,  H01L51/0545

    摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.

    摘要翻译： 提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面被选择性地处理，或通过自组装单层处理选择性地施加。 因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。 也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。

    ORGANIC/INORGANIC THIN FILM DEPOSITION DEVICE AND DEPOSITION METHOD
    7.
    发明申请
    ORGANIC/INORGANIC THIN FILM DEPOSITION DEVICE AND DEPOSITION METHOD 审中-公开
    有机/无机薄膜沉积装置和沉积方法

    公开(公告)号：US20100300360A1

    公开(公告)日：2010-12-02

    申请号：US12856004

    申请日：2010-08-13

    申请人： Seong Deok AHN ,  Seung Youl KANG ,  Chul Am KIM ,  Ji Young OH ,  In Kyu YOU ,  Gi Heon KIM ,  Kyu Ha BAEK ,  Kyung Soo SUH

    发明人： Seong Deok AHN ,  Seung Youl KANG ,  Chul Am KIM ,  Ji Young OH ,  In Kyu YOU ,  Gi Heon KIM ,  Kyu Ha BAEK ,  Kyung Soo SUH

    IPC分类号： C23C16/46

    CPC分类号： C23C16/45523 ,  B05D1/60 ,  C23C16/4408

    摘要： Provided is a method for depositing an organic/inorganic thin film. The method includes: i) heating a source vessel containing an organic material and an inorganic material; ii) transferring a deposition gas to a process chamber; iii) distributing the deposition gas onto a substrate disposed in the process chamber; iv) purging the process chamber; v) heating an activating agent source vessel; vi) transferring a heat initiator gas phase to the process chamber; vii) distributing the heat initiator gas phase onto the organic or inorganic material monomer deposited on the substrate through the process chamber, and forming an organic/inorganic thin film; and viii) exhausting the heat initiator gas phase and purging the process chamber. Depositing the organic/inorganic thin film in a time-division manner, the thickness of the thin film can be accurately adjusted and the deposition can be uniformly performed when the thin film is deposited on a large-scale substrate.

    摘要翻译： 提供一种沉积有机/无机薄膜的方法。 该方法包括：i）加热含有机材料和无机材料的源容器; ii）将沉积气体转移到处理室; iii）将沉积气体分配到设置在处理室中的基板上; iv）清洗处理室; v）加热活化剂源容器; vi）将热引发剂气相转移到所述处理室; vii）通过处理室将热引发剂气相分配到沉积在基材上的有机或无机材料单体上，形成有机/无机薄膜; 和viii）排出热引发剂气相并清洗处理室。 以时分方式沉积有机/无机薄膜，可以精确地调节薄膜的厚度，并且当薄膜沉积在大型基底上时能够均匀地进行沉积。