Plasma processing apparatus
    1.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号:US07699957B2

    公开(公告)日:2010-04-20

    申请号:US11711612

    申请日:2007-02-28

    IPC分类号: C23F1/00 C23C16/00

    摘要: Disclosed is a plasma processing apparatus, in which parasitic plasma is not generated in a transfer chamber. The plasma processing apparatus has a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers. Each of the gate valves includes a valve housing provided between the chambers such that the valve housing contacts side surfaces of the chambers by interposing sealing members therebetween, and forming a designated closed space therein; a valve including a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber, and a back plate contacting the inner surface of the valve housing on the side of the transfer chamber; a valve driving unit connected to the valve for moving the valve in the vertical direction; and a ground member formed on the surface of the valve for electrically connecting the valve and the valve housing when the valve contacts the inner surface of the valve housing.

    摘要翻译: 公开了一种等离子体处理装置,其中在传送室中不产生寄生等离子体。 等离子体处理装置具有装载锁定室,传送室,处理室和安装在用于传送基板的室之间的闸阀和打开和关闭室的开口的闸阀。 每个闸阀包括设置在室之间的阀壳体,使得阀壳体通过在其间插入密封构件而接触室的侧表面,并在其中形成指定的封闭空间; 阀,其包括与处理室侧面上的阀壳体的内表面接触的密封板和在传送室侧面与阀壳体的内表面接触的后板; 连接到阀的阀驱动单元,用于沿垂直方向移动阀; 以及形成在所述阀的表面上的接地构件,用于当所述阀接触所述阀壳体的内表面时电气连接所述阀和所述阀壳体。

    Plasma processing apparatus
    2.
    发明申请
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号:US20070204958A1

    公开(公告)日:2007-09-06

    申请号:US11711612

    申请日:2007-02-28

    IPC分类号: C23F1/00 C23C16/00

    摘要: Disclosed is a plasma processing apparatus, in which parasitic plasma is not generated in a transfer chamber. The plasma processing apparatus has a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers. Each of the gate valves includes a valve housing provided between the chambers such that the valve housing contacts side surfaces of the chambers by interposing sealing members therebetween, and forming a designated closed space therein; a valve including a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber, and a back plate contacting the inner surface of the valve housing on the side of the transfer chamber; a valve driving unit connected to the valve for moving the valve in the vertical direction; and a ground member formed on the surface of the valve for electrically connecting the valve and the valve housing when the valve contacts the inner surface of the valve housing.

    摘要翻译: 公开了一种等离子体处理装置,其中在传送室中不产生寄生等离子体。 等离子体处理装置具有装载锁定室,传送室,处理室和安装在用于传送基板的室之间的闸阀和打开和关闭室的开口的闸阀。 每个闸阀包括设置在室之间的阀壳体,使得阀壳体通过在其间插入密封构件而接触室的侧表面,并在其中形成指定的封闭空间; 阀,其包括与处理室侧面上的阀壳体的内表面接触的密封板和在传送室侧面与阀壳体的内表面接触的后板; 连接到阀的阀驱动单元,用于沿垂直方向移动阀; 以及形成在所述阀的表面上的接地构件,用于当所述阀接触所述阀壳体的内表面时电气连接所述阀和所述阀壳体。

    Plasma processing apparatus
    3.
    发明申请

    公开(公告)号:US20060048709A1

    公开(公告)日:2006-03-09

    申请号:US11219956

    申请日:2005-09-06

    IPC分类号: C23C16/00

    CPC分类号: C23C16/4585

    摘要: Disclosed herein is a plasma processing apparatus, which generates plasma within a vacuum chamber to process semiconductor substrates using the plasma. The apparatus comprises a substrate mounting table, an outer lifting bar, and a baffle. The outer lifting bar comprises a driving shaft, and a substrate supporting member coupled perpendicular to an upper end of the driving shaft. The baffle comprises a baffle plate coupled to the upper end of the driving shaft, and a shielding portion coupled to a lower surface of the baffle plate. The substrate supporting member is a foldable substrate supporting member. The baffle and the substrate supporting member are driven up and down at the same time by the driving shaft. As a result, it is possible to protect the substrate supporting member from plasma, and to prevent interference between the baffle and the outer lifting bar during operation of the plasma processing apparatus.

    Plasma processing apparatus
    5.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号:US07537673B2

    公开(公告)日:2009-05-26

    申请号:US11219956

    申请日:2005-09-06

    CPC分类号: C23C16/4585

    摘要: Disclosed herein is a plasma processing apparatus, which generates plasma within a vacuum chamber to process semiconductor substrates using the plasma. The apparatus comprises a substrate mounting table, an outer lifting bar, and a baffle. The outer lifting bar comprises a driving shaft, and a substrate supporting member coupled perpendicular to an upper end of the driving shaft. The baffle comprises a baffle plate coupled to the upper end of the driving shaft, and a shielding portion coupled to a lower surface of the baffle plate. The substrate supporting member is a foldable substrate supporting member. The baffle and the substrate supporting member are driven up and down at the same time by the driving shaft. As a result, it is possible to protect the substrate supporting member from plasma, and to prevent interference between the baffle and the outer lifting bar during operation of the plasma processing apparatus.

    摘要翻译: 本文公开了一种等离子体处理装置,其在真空室内产生等离子体以使用等离子体处理半导体衬底。 该装置包括基板安装台,外提升杆和挡板。 外提升杆包括驱动轴和垂直于驱动轴的上端联接的基板支撑构件。 挡板包括耦合到驱动轴的上端的挡板和耦合到挡板的下表面的屏蔽部分。 衬底支撑构件是可折叠衬底支撑构件。 挡板和基板支撑构件通过驱动轴同时上下驱动。 结果,可以在等离子体处理装置的操作期间保护基板支撑构件免受等离子体的影响,并且防止挡板和外部提升杆之间的干扰。

    Plasma processing apparatus
    6.
    发明申请
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号:US20060137820A1

    公开(公告)日:2006-06-29

    申请号:US11313022

    申请日:2005-12-20

    IPC分类号: H01L21/306 C23F1/00

    摘要: A plasma processing apparatus for generating plasma in a chamber maintained in a vacuum state and processing a substrate using the plasma. The plasma processing apparatus includes a refrigerant channel for circulating a refrigerant formed in a shower head, thereby easily controlling the temperature of the shower head and improving the reproducibility of plasma treatment.

    摘要翻译: 一种等离子体处理装置,用于在保持真空状态的室中产生等离子体,并使用等离子体处理衬底。 等离子体处理装置包括用于使形成在喷淋头中的制冷剂循环的制冷剂通道,从而容易地控制淋浴头的温度并提高等离子体处理的再现性。