公开(公告)号：US4108736A

公开(公告)日：1978-08-22

申请号：US526915

申请日：1974-11-25

申请人： Serge Rigo ,  Julius Siejka

发明人： Serge Rigo ,  Julius Siejka

IPC分类号： C25D11/02 ,  H01C17/16 ,  C25D11/04 ,  C25D11/26 ,  C25D11/28 ,  C25D11/32

CPC分类号： C25D11/02 ,  H01C17/16 ,  Y10T428/12549 ,  Y10T428/1259 ,  Y10T428/12597 ,  Y10T428/12618

摘要： The invention relates to a method for forming surface coatings on a substrate by anodic oxidation, wherein the substrate contains, at least in those of its parts which are immediately sub-adjacent to its surface, at least one element selected from niobium, chromium, molybdenum, tungsten, titanium and vanadium, or a conducting compound containing such a first element, and at least one second element, different from the first, selected notably from silicon, aluminum, gallium, tantalum, uranium and molybdenum, either in the metallic state, if it constitutes itself a semi-conductor element, or even an insulator, or in the combined or alloyed state with at least one other element to form a semi-conductor compound, or even an insulator, said second element being flush at least in part at the surface of the substrate.The invention also relates to the coatings themselves and which comprise a superficial layer and an inner layer of an oxide of the first element separated by an intermediate layer containing an oxide of the second element.

摘要翻译： 本发明涉及一种通过阳极氧化在基片上形成表面涂层的方法，其中至少在其与其表面紧邻的部分的基底中的至少一种选自铌，铬，钼 ，钨，钛和钒，或含有这种第一元素的导电化合物，以及不同于第一元素的至少一种第二元素，特别是选自硅，铝，镓，钽，铀和钼，金属状态， 如果其构成半导体元件或甚至绝缘体，或者与具有至少一个其它元件的组合或合金化状态构成半导体化合物或甚至绝缘体，则所述第二元件至少部分地齐平 在基板的表面。