公开(公告)号：US20170049832A1

公开(公告)日：2017-02-23

申请号：US15221527

申请日：2016-07-27

Applicant: Seung Hun LEE

Inventor： Seung Hun LEE

IPC: A61K36/25 ,  A61Q17/04 ,  C11B9/02 ,  A61K8/97

CPC classification number: A61K36/25 ,  A61K8/97 ,  A61K2236/00 ,  A61Q13/00 ,  A61Q17/04 ,  C11B9/00 ,  C11B9/025

Abstract: Disclosed is a composition containing a Dendropanax morbifera extract. The Dendropanax morbifera extract is used as an active ingredient for relieving stress, blocking UV light, and/or diffusing fragrance. The composition includes essential oil extracted from Dendropanax morbifera leaf, stem or sap, in which the Dendropanax morbifera extract is separated under optimal extraction conditions, which are determined by comparing and evaluating the components and yields of the essential oil, thus ensuring maximum efficacy and various applications of Dendropanax morbifera.

Abstract translation: 公开了含有Dendropanax morbifera提取物的组合物。 Dendropanax morbifera提取物用作缓解应激，阻挡UV光和/或扩散香料的活性成分。 组合物包括从Dendropanax morbifera叶，茎或汁提取的精油，其中Dendropanax morbifera提取物在最佳提取条件下分离，其通过比较和评估精油的组分和产率来确定，从而确保最大功效和各种 Dendropanax morbifera的应用。

公开(公告)号：US20160293763A1

公开(公告)日：2016-10-06

申请号：US14989956

申请日：2016-01-07

Applicant: Dongwoo KIM ,  Seung Hun LEE ,  Sunjung KIM ,  Hyun Jung LEE ,  Bonyoung KOO

Inventor： Dongwoo KIM ,  Seung Hun LEE ,  Sunjung KIM ,  Hyun Jung LEE ,  Bonyoung KOO

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/06 ,  H01L29/10 ,  H01L29/165

CPC classification number: H01L29/7849 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/785

Abstract: A semiconductor device includes a buffer layer on a substrate, the buffer layer having a lattice constant different from that of the substrate, a fin structure upwardly protruding from the buffer layer, a gate electrode crossing over the fin structure, a cladding layer at a side of the fin structure and covering a top surface and sidewalls of the fin structure, and an interfacial layer between the cladding layer and the fin structure, the interfacial layer including a same element as the buffer layer.

Abstract translation: 半导体器件包括衬底上的缓冲层，缓冲层具有不同于衬底的晶格常数，从缓冲层向上突出的鳍结构，在鳍结构上交叉的栅电极，侧面的覆层 的翅片结构并且覆盖翅片结构的顶表面和侧壁，以及覆盖层和鳍结构之间的界面层，界面层包括与缓冲层相同的元件。