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公开(公告)号：US20120228123A1
公开(公告)日：2012-09-13
申请号：US13044621
申请日：2011-03-10
申请人： Seung-Hee HAN , Ji-Young Byun , Hyun-Kwang Seok , Jun-Hyun Han , Yu-Chan Kim , Sung-Bai Lee , Jin-Young Choi
发明人： Seung-Hee HAN , Ji-Young Byun , Hyun-Kwang Seok , Jun-Hyun Han , Yu-Chan Kim , Sung-Bai Lee , Jin-Young Choi
CPC分类号： C23C14/35 , C23C14/16 , C23C14/48 , H01J37/32532 , H01J37/3438 , H01J37/3467
摘要： Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element.According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source. And, inductively coupled plasma may be generated in the vacuum chamber via antenna so as to increase ionization rate of a solid element and lower operation pressure of magnetron sputtering source.
摘要翻译： 公开了固体元素的等离子体离子注入的装置和方法，其能够实现固体元素的等离子体离子注入。 根据该装置和方法，将样品放置在真空室中的样品台上，并将真空室的内部保持为真空状态。 并且，在真空室中供应气体，将第一脉冲DC功率施加到磁控溅射源，以产生固体元素的等离子体离子。 从源极溅射的固体元素的等离子体离子注入到样品的表面上。 第一功率是脉冲直流电力，能够在维持低平均功率的同时施加脉冲施加高功率。 并且，与施加第一脉冲功率同时，可以将第二功率提供给样品台，该样品台是将固体元素的等离子体离子加速至样品的高负电压脉冲，并与用于磁控溅射的脉冲直流电力同步 资源。 并且，可以通过天线在真空室中产生电感耦合等离子体，以增加固体元素的电离速率和降低磁控管溅射源的操作压力。
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公开(公告)号：US09139902B2
公开(公告)日：2015-09-22
申请号：US13044621
申请日：2011-03-10
申请人： Seung-Hee Han , Ji-Young Byun , Hyun-Kwang Seok , Jun-Hyun Han , Yu-Chan Kim , Sung-Bai Lee , Jin-Young Choi
发明人： Seung-Hee Han , Ji-Young Byun , Hyun-Kwang Seok , Jun-Hyun Han , Yu-Chan Kim , Sung-Bai Lee , Jin-Young Choi
CPC分类号： C23C14/35 , C23C14/16 , C23C14/48 , H01J37/32532 , H01J37/3438 , H01J37/3467
摘要： Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element. According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source. And, inductively coupled plasma may be generated in the vacuum chamber via antenna so as to increase ionization rate of a solid element and lower operation pressure of magnetron sputtering source.
摘要翻译： 公开了固体元素的等离子体离子注入的装置和方法，其能够实现固体元素的等离子体离子注入。 根据该装置和方法，将样品放置在真空室中的样品台上，并将真空室的内部保持为真空状态。 并且，在真空室中供应气体，将第一脉冲DC功率施加到磁控溅射源，以产生固体元素的等离子体离子。 从源极溅射的固体元素的等离子体离子注入到样品的表面上。 第一功率是脉冲直流电力，能够在维持低平均功率的同时施加脉冲施加高功率。 并且，与施加第一脉冲功率同时，可以将第二功率提供给样品台，该样品台是将固体元素的等离子体离子加速至样品的高负电压脉冲，并与用于磁控溅射的脉冲直流电力同步 资源。 并且，可以通过天线在真空室中产生电感耦合等离子体，以增加固体元素的电离速率和降低磁控管溅射源的操作压力。
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