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    Acousto-optic device having wide diffraction angle, optical scanner, light modulator, and display apparatus using the acousto-optic device
    3.
    发明授权
    Acousto-optic device having wide diffraction angle, optical scanner, light modulator, and display apparatus using the acousto-optic device 有权
    具有宽衍射角的声光装置，光学扫描仪，光调制器和使用声光装置的显示装置

    公开(公告)号：US09069228B2

    公开(公告)日：2015-06-30

    申请号：US13585293

    申请日：2012-08-14

    申请人： Seung-hoon Han ,  Wan-joo Maeng

    发明人： Seung-hoon Han ,  Wan-joo Maeng

    IPC分类号： G03H1/22 ,  G02F1/335 ,  G03H1/02 ,  G02B27/22

    CPC分类号： G02F1/335 ,  G02B27/225 ,  G02F2202/32 ,  G03H1/02 ,  G03H1/2294 ,  G03H2001/2292 ,  G03H2225/21

    摘要： An acousto-optic device having a wide range of diffraction angle and an optical scanner, a light modulator, and a display apparatus using the acousto-optic device are provided. The acousto-optic device includes a core layer having a periodic photonic crystal structure in which unit cells of predetermined patterns are repeated, a first clad layer on a first surface of the core layer, the first clad layer having a refractive index that is different from a refractive index of the core layer, a second clad layer on a second surface of the core layer, the second surface being opposite the first surface, the second clad layer having a refractive index that is different from the refractive index of the core layer, and a sound wave generator configured to apply surface acoustic waves (SAW) to the core layer, the first clad layer, the second clad layer, or any combination thereof.

    摘要翻译： 提供了具有宽范围衍射角的声光装置和光学扫描器，光调制器和使用声光装置的显示装置。 声光装置包括具有周期性光子晶体结构的芯层，其中重复预定图案的单位单元，在芯层的第一表面上的第一覆盖层，第一覆盖层具有不同于 所述芯层的折射率，所述芯层的第二表面上的第二覆盖层，所述第二表面与所述第一表面相对，所述第二覆盖层具有与所述芯层的折射率不同的折射率， 以及声波发生器，被配置为将表面声波（SAW）施加到所述芯层，所述第一覆盖层，所述第二覆盖层或其任何组合。

    Transistors, methods of manufacturing the same and electronic devices including transistors
    7.
    发明授权
    Transistors, methods of manufacturing the same and electronic devices including transistors 有权
    晶体管，其制造方法以及包括晶体管的电子器件

    公开(公告)号：US08912536B2

    公开(公告)日：2014-12-16

    申请号：US13156906

    申请日：2011-06-09

    申请人： Wan-joo Maeng ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Joon-seok Park

    发明人： Wan-joo Maeng ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Joon-seok Park

    IPC分类号： H01L29/10 ,  H01L29/786

    CPC分类号： H01L29/7869

    摘要： An oxide transistor includes: a channel layer formed of an oxide semiconductor; a source electrode contacting a first end portion of the channel layer; a drain electrode contacting a second end portion of the channel layer; a gate corresponding to the channel layer; and a gate insulating layer disposed between the channel layer and the gate. The oxide semiconductor includes hafnium-indium-zinc-oxide (HfInZnO). An electrical conductivity of a back channel region of the channel layer is lower than an electrical conductivity of a front channel region of the channel layer.

    摘要翻译： 氧化物晶体管包括：由氧化物半导体形成的沟道层; 与所述沟道层的第一端部接触的源电极; 漏极，与所述沟道层的第二端部接触; 对应于沟道层的栅极; 以及设置在沟道层和栅极之间的栅极绝缘层。 氧化物半导体包括铪 - 铟 - 锌 - 氧化物（HfInZnO）。 沟道层的背沟道区域的导电率低于沟道层的前沟道区域的导电率。