公开(公告)号：US06557248B1

公开(公告)日：2003-05-06

申请号：US09087332

申请日：1998-05-29

申请人： Shamouil Shamouilian ,  Manoocher Birang ,  John F. Cameron ,  Chandra Deshpandey ,  Alfred Goldspeil ,  Ron Northrup ,  Semyon Sherstinsky ,  Sasson Someth

发明人： Shamouil Shamouilian ,  Manoocher Birang ,  John F. Cameron ,  Chandra Deshpandey ,  Alfred Goldspeil ,  Ron Northrup ,  Semyon Sherstinsky ,  Sasson Someth

IPC分类号： H01R4300

CPC分类号： C23C16/45521 ,  C23C16/4586 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T29/49117 ,  Y10T279/23

摘要： A method of fabricating an electrostatic member 33 for holding a substrate 45 in a process chamber 80 containing erosive process gas. The method comprises the steps of forming an electrostatic member 33 comprising an insulator or dielectric layer 35 covering an electrically conductive layer, and shaping the electrostatic member 33 to form a dielectric covered electrode and an electrical connector 55 attached to the dielectric covered electrode 50 to conduct charge to the dielectric covered electrode 50.

摘要翻译： 一种制造静电部件33的方法，用于将基板45保持在包含腐蚀性处理气体的处理室80中。 该方法包括以下步骤：形成包括覆盖导电层的绝缘体或电介质层35的静电部件33，并且使静电部件33成形以形成介电覆盖电极和连接到电介质被覆电极50的电连接器55 充电到介电覆盖电极50。

公开(公告)号：US6023405A

公开(公告)日：2000-02-08

申请号：US24917

申请日：1998-02-17

申请人： Shamouil Shamouilian ,  Manoocher Birang ,  John F. Cameron ,  Chandra Deshpandey ,  Alfred Goldspeil ,  Ron Northrup ,  Semyon Shertinsky ,  Sasson Somekh

发明人： Shamouil Shamouilian ,  Manoocher Birang ,  John F. Cameron ,  Chandra Deshpandey ,  Alfred Goldspeil ,  Ron Northrup ,  Semyon Shertinsky ,  Sasson Somekh

IPC分类号： B25J15/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

CPC分类号： C23C16/45521 ,  C23C16/4586 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23 ,  Y10T29/49117

摘要： An electrostatic chuck (20) for holding a substrate (45) is described. One version of the chuck (20) suitable for mounting on a base (25), comprises (i) an electrostatic member (33) having an electrode (50) therein, and (ii) an electrical lead (60) extending through the base (25) to electrically engage the electrode (50) of the electrostatic member (33). When the chuck (20) is used to hold a substrate (45) in a process chamber (80) containing erosive process gas, the substrate (45) covers and substantially protects the electrical lead (60) from erosion by the erosive process gas. In a preferred version of the chuck (20), an electrical connector (55) forming an integral extension of the electrode (50), electrically connects the electrode (50) to a voltage supply terminal (70) used to operate the chuck (20). The electrical connector (55) comprises (i) an electrical lead (60) that extends through the base (25), and (ii) an electrical contact (65) on the electrical lead (60), the contact sized sufficiently large to directly contact and electrically engage the voltage supply terminal (70). The electrode (50) of the chuck (20) can comprise first and second electrodes (130), (135) electrically isolated from one another by an electrical isolation void (52), the electrodes sized and configured so that the electrical isolation void (52) can serve as a cooling groove (105) for holding coolant for cooling the substrate (45) held on the chuck (20). Preferably, the two electrode chuck (20) is used in conjunction with a switching system capable of operating the chuck (20) in either a monopolar mode or in a bipolar mode.

摘要翻译： 描述了用于保持基板（45）的静电卡盘（20）。 适于安装在基座（25）上的卡盘（20）的一个版本包括（i）其中具有电极（50）的静电部件（33）和（ii）延伸穿过底座 （25）电连接静电部件（33）的电极（50）。 当卡盘（20）用于将基板（45）保持在包含腐蚀性处理气体的处理室（80）中时，基板（45）覆盖并基本上保护电引线（60）免受侵蚀性处理气体的侵蚀。 在卡盘（20）的优选形式中，形成电极（50）的整体延伸的电连接器（55）将电极（50）电连接到用于操作卡盘（20）的电压供应端子 ）。 电连接器（55）包括（i）延伸穿过基座（25）的电引线（60）和（ii）电引线（60）上的电触头（65），触头尺寸足够大以直接 接触和电接合电压端子（70）。 卡盘（20）的电极（50）可以包括通过电隔离空隙（52）彼此电隔离的第一和第二电极（130），电极的尺寸和构造使得电隔离空隙（ 52）可以用作用于保持冷却剂的冷却槽（105），以冷却保持在卡盘（20）上的基板（45）。 优选地，两个电极卡盘（20）与能够以单极模式或双极模式操作卡盘（20）的开关系统结合使用。

公开(公告)号：US5822171A

公开(公告)日：1998-10-13

申请号：US410449

申请日：1995-03-24

申请人： Shamouil Shamouilian ,  Manoocher Birang ,  John F. Cameron ,  Chandra Deshpandey ,  Alfred Goldspiel ,  Ron Northrup ,  Semyon Shertinsky ,  Sasson Somekh

发明人： Shamouil Shamouilian ,  Manoocher Birang ,  John F. Cameron ,  Chandra Deshpandey ,  Alfred Goldspiel ,  Ron Northrup ,  Semyon Shertinsky ,  Sasson Somekh

IPC分类号： B25J15/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

CPC分类号： C23C16/45521 ,  C23C16/4586 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23 ,  Y10T29/49117

摘要： An electrostatic chuck (20) for holding a substrate (45) is described. One version of the chuck (20) suitable for mounting on a base (25), comprises (i) an electrostatic member (33) having an electrode (50) therein, and (ii) an electrical lead (60) extending through the base (25) to electrically engage the electrode (50) of the electrostatic member (33). When the chuck (20) is used to hold a substrate (45) in a process chamber (80) containing erosive process gas, the substrate (45) covers and substantially protects the electrical lead (60) from erosion by the erosive process gas. In a preferred version of the chuck (20), an electrical connector (55) forming an integral extension of the electrode (50), electrically connects the electrode (50) to a voltage supply terminal (70) used to operate the chuck (20). The electrical connector (55) comprises (i) an electrical lead (60) that extends through the base (25), and (ii) an electrical contact (65) on the electrical lead (60), the contact sized sufficiently large to directly contact and electrically engage the voltage supply terminal (70). The electrode (50) of the chuck (20) can comprise first and second electrodes (130), (135) electrically isolated from one another by an electrical isolation void (52), the electrodes sized and configured so that the electrical isolation void (52) can serve as a cooling groove (105) for holding coolant for cooling the substrate (45) held on the chuck (20). Preferably, the two electrode chuck (20) is used in conjunction with a switching system capable of operating the chuck (20) in either a monopolar mode or in a bipolar mode. Erosion resistance of the chuck (20) is further enhanced by a masking gas assembly (115) which directs a masking gas at an exposed portion of the insulator (35), to protect the exposed portion of the insulator (35) from the erosive gas contained in the process chamber (80).

公开(公告)号：US5883778A

公开(公告)日：1999-03-16

申请号：US503790

申请日：1995-07-18

申请人： Semyon Sherstinsky ,  John F. Cameron ,  Shamouil Shamouilian ,  Manoocher Birang ,  Alfred Mak ,  Simon W. Tam ,  Robert E. Ryan

发明人： Semyon Sherstinsky ,  John F. Cameron ,  Shamouil Shamouilian ,  Manoocher Birang ,  Alfred Mak ,  Simon W. Tam ,  Robert E. Ryan

IPC分类号： B23Q3/15 ,  C23C16/458 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00

CPC分类号： H02N13/00 ,  C23C16/4586 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck 20 of the present invention is capable of maintaining substantially uniform temperatures across a substrate 30. The chuck 20 comprises an electrostatic member 35 that includes (i) an insulator 45 covering an electrode 40, (ii) a substantially planar and conformal contact surface 50 capable of conforming to a substrate 30, and (iii) conduits 105 terminating at the contact surface 50 for providing heat transfer fluid to the contact surface 50. Application of a voltage to the electrode 40 of the electrostatic member 35 electrostatically holds the substrate 30 on the conformal contact surface 50 to define an outer periphery 110 having (1) leaking portions 115 where heat transfer fluid leaks out, and (2) sealed portions 130 where heat transfer fluid substantially does not leak out. A fluid flow regulator 135 is provided for flowing heat transfer fluid at different flow rates through the conduits 105 in the electrostatic member 35 to provide (i) first flow rates of heat transfer fluid through the conduits 105 adjacent to the sealed portions 130 of the outer periphery 110 of the electrostatic member 35, and (ii) second flow rates of heat transfer fluid through the conduits 105 adjacent to the leaking portions 115, the second flow rates being higher than the first flow rates, to maintain substantially uniform temperatures across the substrate 30 held on the chuck 20.

摘要翻译： 本发明的静电卡盘20能够在基板30上保持基本均匀的温度。卡盘20包括静电部件35，静电部件35包括（i）覆盖电极40的绝缘体45，（ii）基本上平面和保形接触 能够与衬底30相符的表面50，以及（iii）终止于接触表面50处的导管105，用于将热传递流体提供给接触表面50.施加电压到静电构件35的电极40，静电地保持衬底 30，以形成具有（1）泄漏部分115（其中传热流体泄漏）的外周110，以及（2）传热流体基本上不会泄漏的密封部分130。 提供流体流量调节器135，用于使不同流速的传热流体流过静电构件35中的管道105，以提供（i）传热流体通过与外部的密封部分130相邻的导管105的第一流量 静电构件35的周边110，以及（ii）通过与泄漏部分115相邻的导管105的传热流体的第二流量，第二流速高于第一流速，以保持基本上均匀的温度 30夹在卡盘20上。

公开(公告)号：US5753132A

公开(公告)日：1998-05-19

申请号：US725482

申请日：1996-10-04

申请人： Shamouil Shamouilian ,  Sasson Somekh ,  Hyman J. Levinstein ,  Manoocher Birang ,  Semyon Sherstinsky ,  John F. Cameron

发明人： Shamouil Shamouilian ,  Sasson Somekh ,  Hyman J. Levinstein ,  Manoocher Birang ,  Semyon Sherstinsky ,  John F. Cameron

IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  B44C1/22

CPC分类号： H01L21/6831 ,  H01L21/6833 ,  H02N13/00

摘要： A process for fabricating an electrostatic chuck (20) comprising the steps of (c) forming a base (80) having an upper surface with cooling grooves (85) therein, the grooves sized and distributed for holding a coolant therein for cooling the base; and (d) pressure conforming an electrical insulator layer (45) to the grooves on the base by the steps of (i) placing the base into a pressure forming apparatus (25) and applying an electrical insulator layer over the grooves in the base; and (ii) applying a sufficiently high pressure onto the insulator layer to pressure conform the insulator layer to the grooves to form a substantially continuous layer of electrical insulator conformal to the grooves on the base.

摘要翻译： 一种用于制造静电卡盘（20）的方法，包括以下步骤：（c）形成具有上表面的基部（80），其中具有冷却槽（85），所述凹槽的尺寸和分布用于将冷却剂保持在其中用于冷却基座; 和（d）通过以下步骤将电绝缘体层（45）施加到基底上的凹槽上：（i）将基底放置在压力成形设备（25）中并将电绝缘体层施加在基底中的凹槽上; 和（ii）将足够高的压力施加到绝缘体层上以使绝缘体层压到沟槽上，以形成与基底上的凹槽保形的基本上连续的电绝缘层。

公开(公告)号：US5745331A

公开(公告)日：1998-04-28

申请号：US381786

申请日：1995-01-31

申请人： Shamouil Shamouilian ,  Sasson Somekh ,  Hyman J. Levinstein ,  Manoocher Birang ,  Semyon Sherstinsky ,  John F. Cameron

发明人： Shamouil Shamouilian ,  Sasson Somekh ,  Hyman J. Levinstein ,  Manoocher Birang ,  Semyon Sherstinsky ,  John F. Cameron

IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6831 ,  H01L21/6833 ,  H02N13/00

摘要： An electrostatic chuck (20) for holding a substrate (75) comprises (i) a base (80) having an upper surface (95) with grooves (85) therein, the grooves (85) sized and distributed for holding coolant for cooling a substrate (75), and (ii) a substantially continuous insulator film (45) conformal to the grooves (85) on upper surface (95) of the base (80). The base (80) can be electrically conductive and capable of serving as the electrode (50) of the chuck (20), or the electrode (50) can be embedded in the insulator film (45). The insulator film (45) has a dielectric breakdown strength sufficiently high that when a substrate (75) placed on the chuck (20) and electrically biased with respect to the electrode (50), electrostatic charge accumulates in the substrate (75) and in the electrode (50) forming an electrostatic force that attracts and holds the substrate (75) to the chuck (20). Preferably the chuck (20) is fabricated using a pressure forming process, and more preferably using a pressure differential process.

摘要翻译： 用于保持基板（75）的静电卡盘（20）包括（i）具有在其中具有凹槽（85）的上表面（95）的基部（80），所述凹槽（85）的尺寸和分布以保持用于冷却的冷却剂 衬底（75），和（ii）与基座（80）的上表面（95）上的凹槽（85）共形的基本上连续的绝缘膜（45）。 基座（80）可以是导电的并且能够用作卡盘（20）的电极（50），或者电极（50）可以嵌入绝缘膜（45）中。 绝缘体膜（45）具有足够高的绝缘击穿强度，当放置在卡盘（20）上并相对于电极（50）电偏置的基板（75）时，静电电荷积聚在基板（75）中 所述电极（50）形成吸引并保持所述基板（75）到所述卡盘（20）的静电力。 优选地，使用压力成形方法制造卡盘（20），更优选使用压差法。

公开(公告)号：US5671117A

公开(公告)日：1997-09-23

申请号：US626667

申请日：1996-03-27

申请人： Semyon Sherstinsky ,  Shamouil Shamouilian ,  Manoocher Birang ,  Alfred Mak ,  Simon W. Tam

发明人： Semyon Sherstinsky ,  Shamouil Shamouilian ,  Manoocher Birang ,  Alfred Mak ,  Simon W. Tam

IPC分类号： B23Q3/15 ,  C23C16/458 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00

CPC分类号： H02N13/00 ,  C23C16/4586 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23 ,  Y10T29/49117

摘要： An electrostatic chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The multiple apertures reduce overheating near the wafer edge and provide lower temperature gradients across the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in such a way that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.

摘要翻译： 一种用于将半导体晶片固定在具有多个孔的基座上以在晶片下方引入冷却气体的静电卡盘。 多个孔径减小晶片边缘附近的过热，并在晶片上提供较低的温度梯度。 晶片通过静电力抵抗夹在两个电介质层之间的电极层的层压体，使得层压体在晶片上呈现超过电极层的外边缘相当长的平面。 层压结构确保了超过电极外边缘的大的晶片区域与层压体接触，以使边缘附近的冷却气体泄漏最小化，并且通过增加电极层之间的电介质材料的路径长度来提供更长的使用寿命 并可能损坏卡盘周围的等离子体材料。

公开(公告)号：US5634266A

公开(公告)日：1997-06-03

申请号：US449135

申请日：1995-05-24

申请人： Semyon Sherstinsky ,  Shamouil Shamouilian ,  Manoocher Birang ,  Alfred Mak ,  Simon W. Tam

发明人： Semyon Sherstinsky ,  Shamouil Shamouilian ,  Manoocher Birang ,  Alfred Mak ,  Simon W. Tam

IPC分类号： B23Q3/15 ,  C23C16/458 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00 ,  H01R43/00

CPC分类号： H02N13/00 ,  C23C16/4586 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23 ,  Y10T29/49117

摘要： A method of making a dielectric chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in accordance with the method, such that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction method ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.

摘要翻译： 一种制造用于将半导体晶片固定在具有多个孔的基座上用于在晶片下引入冷却气体的电介质卡盘的方法。 根据该方法，晶片通过静电力保持在夹在两个电介质层之间的电极层的层压体上，使得层压体在晶片上呈现超过电极层的外边缘相当距离的平坦表面。 层叠结构方法确保了超过电极外边缘的大晶圆区域与层压板接触，以使边缘附近的冷却气体泄漏最小化，并且通过增加电极之间的电介质材料的路径长度来提供更长的使用寿命 层和可能损坏的卡盘周围的等离子体材料。

公开(公告)号：US5646814A

公开(公告)日：1997-07-08

申请号：US276010

申请日：1994-07-15

申请人： Shamouil Shamouilian ,  Samuel Broydo ,  Manoocher Birang

发明人： Shamouil Shamouilian ,  Samuel Broydo ,  Manoocher Birang

IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6875 ,  H01L21/6831 ,  H01L21/6833

摘要： A multi-electrode electrostatic chuck (20) for holding a substrate (42) such as a silicon wafer during processing is described. The electrostatic chuck (20) comprises (i) a first electrode (22), (ii) a second electrode (24), and (iii) an insulator (26) having a lower portion (26a), a middle portion (26b) and an upper portion (26c). The lower portion (26a) of the insulator (26) is below the first electrode (22) and has a bottom surface (28) suitable for resting the chuck (20) on a support (44) in a process chamber (41). The middle portion (26b) of the insulator (26) lies between the first and second electrodes (22), (24). The upper portion (26c) of the insulator (26) is on the second electrode (24), and has a top surface (30) suitable for holding a substrate (42). The first and second electrodes (22, 24) can have a unipolar or bipolar configurations. In operation, the chuck (20) is placed on a support (44) in a process chamber (41) so that the bottom surface (28) of the chuck (20) rests on the support (44). A substrate (42) is placed on the top surface (30) of the chuck (20). When the first electrode (22) of the chuck (20) is electrically biased with respect to the support (44), a first electrostatic force holds the chuck (20) onto the support (44). When the second electrode (24) of the chuck (20) is electrically biased with respect to the substrate (42) placed on the chuck (20), a second electrostatic force holds the substrate (42) to the chuck (20).

摘要翻译： 描述了用于在处理期间保持硅晶片等基板（42）的多电极静电卡盘（20）。 静电卡盘（20）包括（i）第一电极（22），（ii）第二电极（24）和（iii）具有下部分（26a）的绝缘体（26），中间部分（26b） 和上部（26c）。 绝缘体（26）的下部（26a）位于第一电极（22）的下面，并且具有适于将卡盘（20）放置在处理室（41）中的支撑件（44）上的底表面（28）。 绝缘体（26）的中间部分（26b）位于第一和第二电极（22），（24）之间。 绝缘体（26）的上部（26c）在第二电极（24）上，并且具有适于保持基板（42）的顶表面（30）。 第一和第二电极（22,24）可以具有单极或双极结构。 在操作中，卡盘（20）被放置在处理室（41）中的支撑件（44）上，使得卡盘（20）的底表面（28）搁置在支撑件（44）上。 基板（42）被放置在卡盘（20）的顶表面（30）上。 当卡盘（20）的第一电极（22）相对于支撑件（44）被电偏置时，第一静电力将卡盘（20）保持在支撑件（44）上。 当卡盘（20）的第二电极（24）相对于放置在卡盘（20）上的基板（42）电气偏置时，第二静电力将基板（42）保持在卡盘（20）上。

公开(公告)号：US07775852B2

公开(公告)日：2010-08-17

申请号：US11099789

申请日：2005-04-05

申请人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

发明人： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

IPC分类号： B24B49/12

CPC分类号： H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

摘要翻译： 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光（CMP）的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪，以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。