公开(公告)号：US11817459B2

公开(公告)日：2023-11-14

申请号：US17852418

申请日：2022-06-29

申请人： Sharp Display Technology Corporation

发明人： Katsunori Misaki

IPC分类号： G02F1/1368 ,  H01L27/12 ,  H01L27/146 ,  G02F1/1343

CPC分类号： H01L27/1225 ,  G02F1/1368 ,  H01L27/127 ,  H01L27/1462 ,  H01L27/14616 ,  H01L27/14685 ,  H01L27/14692 ,  G02F1/134363 ,  H01L27/14658

摘要： Each thin film transistor of an active matrix substrate includes an oxide semiconductor layer, a gate electrode disposed closer to the substrate side of the oxide semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode, wherein the oxide semiconductor layer includes a layered structure including a first layer and a second layer disposed on a part of the first layer and extending across the first layer in a channel width direction when viewed in a normal direction of the substrate, the first layer includes an overlapping portion overlapping with the second layer, and a first portion and a second portion each located on a corresponding one of both sides of the second layer, when viewed in a normal direction of the substrate, the second layer covers an upper surface and a side surface of the overlapping portion of the first layer, the source electrode is electrically connected to at least a part of an upper surface of the first portion, and the drain electrode is electrically connected to at least a part of an upper surface of the second portion.

公开(公告)号：US12111555B2

公开(公告)日：2024-10-08

申请号：US18136275

申请日：2023-04-18

申请人： Sharp Display Technology Corporation

发明人： Katsunori Misaki

IPC分类号： G02F1/1368 ,  G02F1/1362

CPC分类号： G02F1/1368 ,  G02F1/136209 ,  G02F1/136222 ,  G02F1/136227

摘要： A method of manufacturing an active matrix substrate includes forming multiple thin film transistors corresponding to multiple subpixels on a substrate; forming color filters provided with colored layers having predetermined colors disposed on the multiple thin film transistors, respectively, and having contact holes for electrical connection to the multiple thin film transistors, respectively; forming a first transparent electrode by forming a first transparent conductive film above the color filters and patterning the first transparent conductive film; forming an inorganic protection film made of an inorganic insulating film on the first transparent electrode; forming a second transparent conductive film on the inorganic protection film; forming antireflection layers on the second transparent conductive film, each of the antireflection layers formed by layering a metal layer and an inorganic insulating layer and overlapping a boundary portion between the colored layers; and forming a second transparent electrode by patterning the second transparent conductive film.