公开(公告)号：US20220020554A1

公开(公告)日：2022-01-20

申请号：US17367523

申请日：2021-07-05

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Kohji SHINKAWA ,  Tadashi IWAMATSU ,  Tomohiro KOSAKA ,  Kazuya TSUJINO ,  Reshan Maduka ABEYSINGHE

IPC: H01J29/96 ,  H01J29/02

Abstract: This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

公开(公告)号：US20190304732A1

公开(公告)日：2019-10-03

申请号：US16369004

申请日：2019-03-29

Applicant: Sharp Kabushiki Kaisha

Inventor： Kenichiro NAKAMATSU ,  Tokio TAGUCHI ,  Kohji SHINKAWA ,  Mai TAKASAKI ,  Tadashi IWAMATSU

IPC: H01J3/02 ,  H01J9/02 ,  H01L21/768 ,  H01L21/02

Abstract: A method of producing an electron emitting device includes: step A of providing an aluminum substrate or providing an aluminum layer supported by a substrate; step B of anodizing a surface of the aluminum substrate or a surface of the aluminum layer to form a porous alumina layer having a plurality of pores; step C of applying Ag nanoparticles in the plurality of pores to allow the Ag nanoparticles to be supported in the plurality of pores; step D of, after step C, applying a dielectric layer-forming solution onto substantially the entire surface of the aluminum substrate or the aluminum layer, the dielectric layer-forming solution containing, in an amount of not less than 7 mass % but less than 20 mass %, a polymerization product having siloxane bonds; step E of, after step D, at least reducing a solvent contained in the dielectric layer-forming solution to form the dielectric layer; and step F of forming an electrode on the dielectric layer.

公开(公告)号：US20200075285A1

公开(公告)日：2020-03-05

申请号：US16613540

申请日：2018-05-15

Applicant: Sharp Kabushiki Kaisha

Inventor： Hidekazu HAYASHI ,  Tokio TAGUCHI ,  Kenichiro NAKAMATSU ,  Tadashi IWAMATSU ,  Kohji SHINKAWA ,  Mai TAKASAKI ,  Toshihiro KANEKO ,  Atsushi NIINOH

IPC: H01J1/312 ,  H01J9/42 ,  H01J9/02

Abstract: An electron emitting device (100) includes a first electrode (12), a second electrode (52), and a semi-conductive layer (30) provided between the first electrode (12) and the second electrode (52). The semi-conductive layer (30) includes a porous alumina layer (32) having a plurality of pores (34) and silver (42) supported in the plurality of pores (34) of the porous alumina layer (32).