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公开(公告)号：US11133438B2
公开(公告)日：2021-09-28
申请号：US16689383
申请日：2019-11-20
Applicant: Sharp Kabushiki Kaisha
Inventor： Edward Andrew Boardman , Tim Michael Smeeton
Abstract: A light-emitting device incorporates an electrode that includes conductive nanoparticles to increase emission performance. A light-emitting device includes a substrate; a first electrode disposed on the substrate between a viewing side of the light-emitting device and the substrate; a second electrode disposed between the first electrode and the viewing side of the light-emitting device, wherein the second electrode includes a layer of nanoparticles that are electrically conductive; and an emissive layer comprising quantum nanoparticles in electrical contact with the first electrode and the second electrode, wherein the first emissive layer includes a material that emits light when electrically excited. Multiple light-emitting devices may constitute sub-pixels that are combined into a pixel, such as for a display device, wherein each sub-pixel emits light of a different color. Thicknesses of the charge transport layers are the same for the sub-pixels, and/or emissive layer portions of the different sub-pixels have different thicknesses.
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公开(公告)号：US11011113B1
公开(公告)日：2021-05-18
申请号：US16830876
申请日：2020-03-26
Applicant: Sharp Kabushiki Kaisha
Inventor： Tong Lu , Michael James Brownlow , Tim Michael Smeeton
IPC: G09G3/3258 , G09G3/3266 , G09G3/325 , G09G3/3283
Abstract: A pixel circuit compensates the threshold voltage variations of the drive transistor with an ultra-short one horizontal (1H) time, with additionally removing the possible memory effects associated with the light-emitting device and the drive transistor from the previous frame. An ultra-short 1H time (
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公开(公告)号：US10930888B2
公开(公告)日：2021-02-23
申请号：US16517971
申请日：2019-07-22
Applicant: Sharp Kabushiki Kaisha
Inventor： David James Montgomery , Edward Andrew Boardman , Tim Michael Smeeton
Abstract: A light-emitting layer structure that maximizes constructive interference for light emission by varying a phase shift introduced by reflective electrodes. The light-emitting layer structure includes a first and second optical cavity including a first and second reflective electrode; a first and second partially transparent electrode; and a first and second emissive layer (EML) disposed between the first and second reflective electrodes and the first and second partially transparent electrodes, wherein the first EML emits light having a first wavelength; wherein the first reflective electrode introduces a first phase shift, depending on the first wavelength, on reflection of light emitted by the first EML; and wherein the second EML emits light having a second wavelength and the second reflective electrode introduces a second phase shift, depending on the second wavelength, on reflection of light emitted by the second EML, and the first phase shift is different from the second phase shift.
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公开(公告)号：US10897024B2
公开(公告)日：2021-01-19
申请号：US16725578
申请日：2019-12-23
Applicant: Sharp Kabushiki Kaisha
Inventor： Enrico Angioni , James Andrew Robert Palles-Dimmock , Edward Andrew Boardman , Tim Michael Smeeton
Abstract: A light-emitting device includes an anode; a cathode; and an emissive layer disposed between the anode and the cathode, the emissive layer including quantum dots dispersed in a crosslinked matrix formed from one or more crosslinkable charge transport materials. A method of forming the emissive layer of a light-emitting device includes depositing a mixture including quantum dots and one or more crosslinkable charge transport materials on a layer; and subjecting at least a portion of the mixture to UV activation to form an emissive layer including quantum dots dispersed in a crosslinked matrix.
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公开(公告)号：US10885843B1
公开(公告)日：2021-01-05
申请号：US16740763
申请日：2020-01-13
Applicant: Sharp Kabushiki Kaisha
Inventor： Tong Lu , Michael James Brownlow , Tim Michael Smeeton
IPC: G09G3/325 , G09G3/3266 , G09G3/3275
Abstract: A pixel circuit for a display device operable in an initialization phase, a compensation phase, a data programming phase, and an emission phase, whereby the one horizontal time is minimized while maintaining accurate compensation of the threshold voltages of the drive transistors, and further accounting for any variations in the voltage supplies. The pixel circuit includes a first drive transistor configured to control an amount of current to a light-emitting device during an emission phase depending upon voltages applied to a gate and a first terminal of the first drive transistor; and a second drive transistor that is configured as a source follower, wherein a first terminal of the second drive transistor is connected to a first power supply line and a second terminal of the second drive transistor is connected to a first terminal of the first drive transistor. The first drive transistor is one of a p-type or n-type transistor and the second drive transistor is the other of a p-type or n-type transistor. A light-emitting device is electrically connected at a first terminal to a second terminal of the first drive transistor during the emission phase and at a second terminal to a second power supply line.
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Patent Agency Ranking
公开(公告)号：US10388902B1
公开(公告)日：2019-08-20
申请号：US15937046
申请日：2018-03-27
Applicant: Sharp Kabushiki Kaisha
Inventor： James Andrew Robert Palles-Dimmock , Edward Andrew Boardman , Tim Michael Smeeton , Enrico Angioni
Abstract: A device includes a first light-emitting device and a second light-emitting device, each including an anode, a cathode, charge transport layers disposed between the anode and the cathode, and an emissive layer disposed between the charge transport layers. For the first light-emitting device, the emissive layer includes first quantum dots, the emissive layer configured to emit light at a first wavelength. For the second light-emitting device, the emissive layer includes emissive sub-layers provided in a stacked arrangement in a thickness direction. A first one of the emissive sub-layers includes the first quantum dots and is configured to emit light at the first wavelength, and a second one of the emissive sub-layers includes second quantum dots and is configured to emit light at a second wavelength different than the first wavelength.
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公开(公告)号：US10307495B2
公开(公告)日：2019-06-04
申请号：US15512423
申请日：2015-06-29
Applicant: SHARP KABUSHIKI KAISHA
Inventor： Jun Mori , Tim Michael Smeeton
Abstract: A sterilizing apparatus having both excellent safety and operability is provided. A sterilizing apparatus (1) according to an aspect for carrying out the present invention is a sterilizing apparatus (1) that radiates light including ultraviolet rays onto an affected area (6), wherein first wavelength light (Lλ1) having a peak wavelength in a wavelength range of 190 nm or more and 230 nm or less, and second wavelength light (Lλ2) having a peak wavelength in a wavelength range of 400 nm or more and 780 nm or less are emitted.
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公开(公告)号：US11264597B2
公开(公告)日：2022-03-01
申请号：US16908659
申请日：2020-06-22
Applicant: SHARP KABUSHIKI KAISHA
Inventor： David James Montgomery , Tim Michael Smeeton
Abstract: A light emitting structure comprises a bank surrounding a sub-pixel stack on a substrate, a first filler material in an interior space above the sub-pixel stack, and a second filler material over the first filler material. The sub-pixel stack emits a first emission peak along an on-axis direction substantially normal to a top surface of the sub-pixel stack and through an interface between the first and second filler materials. The sub-pixel stack emits a second emission peak along an off-axis direction that is totally internally reflected by the interface before reaching a sloped sidewall of the bank and is then emitted along the on-axis direction. An emissive area of the sub-pixel stack is configured such that the second emission peak is reflected by the interface not more than once before reaching the sloped sidewall.
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公开(公告)号：US11152538B1
公开(公告)日：2021-10-19
申请号：US16840261
申请日：2020-04-03
Applicant: SHARP KABUSHIKI KAISHA
Inventor： David James Montgomery , Tim Michael Smeeton
Abstract: A light emitting structure comprises a substrate, a sub-pixel stack over a surface of the substrate, and a bank surrounding the sub-pixel stack on the substrate. The light emitting structure also comprises a first filler material in the interior space, and a second filler material over the first filler material. The sub-pixel stack emits a first emission peak along an on-axis direction substantially normal to a top surface of the stack and emits a second emission peak along an off-axis direction at an angle to the on-axis direction. The first emission peak is emitted through an interface between the first filler material and the second filler material substantially without total internal reflection. The second emission peak is totally internally reflected by the interface before reaching a sloped sidewall of the bank and is emitted along the on-axis direction.
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公开(公告)号：US10826010B1
公开(公告)日：2020-11-03
申请号：US16446677
申请日：2019-06-20
Applicant: Sharp Kabushiki Kaisha
Inventor： David James Montgomery , Tim Michael Smeeton , Edward Andrew Boardman
Abstract: A light-emitting structure maximizes constructive interference for light emission by adjusting charge carrier mobilities of different sub-pixel emissive layers such that charge recombination occurs at a boundary of each emissive layer and one of the charge transport layers. The light-emitting layer structure includes two electrode layers that respectively generate first and second charges that are carried via first and second charge transport layers, and a plurality of emissive layers (EMLs) including a first EML having a first charge mobility favoring the first charges and a second EML having a second charge mobility favoring second charges. The first EML emits light by recombination of the first and second charges at a first boundary layer formed at one of the charge transport layers and the first EML, and the second EML emits light by recombination of the first and second charges at a second boundary layer formed at the other of the charge transport layers and the second EML.
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