Ion beam implant current, spot width and position tuning
    1.
    发明授权
    Ion beam implant current, spot width and position tuning 有权
    离子束注入电流,光斑宽度和位置调整

    公开(公告)号:US07442944B2

    公开(公告)日:2008-10-28

    申请号:US10960904

    申请日:2004-10-07

    IPC分类号: H01J37/317

    摘要: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

    摘要翻译: 公开了用于调整离子注入机系统的离子束调谐方法,系统和程序产品。 本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统,以根据离子束轮廓最大化估计的注入电流,以同时优化总离子束电流和离子束斑点宽度,并最大化注入电流。 此外,调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束,其通过减少离子束建立时间改善离子注入系统的生产率和性能,并为每个离子提供可重复的射束角度性能 横跨许多设置。