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1.发明授权公开(公告)号：US10424738B2
公开(公告)日：2019-09-24
申请号：US15536085
申请日：2017-05-12
发明人： Huafei Xie
IPC分类号： H01L51/00 , C09K11/06 , C07C47/546 , H01L51/50
摘要： A method for manufacturing a condensed-cyclic compound and an electroluminescent device is provided, the condensed-cyclic compound is represented by the following formula: wherein —R1, —R2 and —CHO are connected to any one of an unsaturated carbon atom of a naphthalene ring; —R1, —R2 are respectively a hydrogen and any one of an alkane group or a condensed-cyclic aromatic hydrocarbon group. The embodiments provided by the present invention using the above-described manner is able to reduce ACQ phenomenon of the condensed-cyclic compound in aggregate state or solid state.
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2.发明授权公开(公告)号：US10457865B2
公开(公告)日：2019-10-29
申请号：US15119375
申请日：2016-08-03
发明人： Huafei Xie
摘要： The present disclosure relates to a water-soluble QD, and manufacturing methods of the water-soluble QDs and the QD films. The manufacturing method includes respectively providing oil-soluble QDs and multi-mercapto polymers, mixing the multi-mercapto polymer and the oil-soluble QDs such that the multi-mercapto polymer and the oil-soluble QDs are reacted with each other to conduct ligand exchange under protection of inert gas, and adding appropriate volume of water and collecting aqueous solution on a top layer after reaction to obtain water-soluble QDs. By adopting the above method, stable water-soluble QDs may be obtained, and the optical performance of the QDs may be maintained. In addition, the water-soluble QDs carrying the electrical charges may be adopted to prepare the QD film via the LBL method.
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公开(公告)号：US10170629B2
公开(公告)日：2019-01-01
申请号：US15529082
申请日：2017-04-25
发明人： Huafei Xie
IPC分类号： H01L29/786 , H01L21/02 , H01L21/04 , H01L29/16 , H01L29/66 , H01L29/12 , C09D7/40 , C09D5/24 , B82Y40/00 , H01L29/45 , H01L29/417 , B82Y30/00
摘要： A field-effect transistor and a manufacturing method thereof are provided. The method includes depositing a first insulating layer on a substrate; forming a source electrode and a drain electrode on the first insulating layer; forming a carbon quantum dots active layer covering the source electrode and the drain electrode; and forming a second insulating layer and a gate electrode on the carbon quantum dots active layer sequentially. According to the above method, the present disclosure making the field-effect transistor active layer with carbon quantum dots as materials, which enriches the material of the field-effect transistor, reduces the environmental pollution in current technology by using metal dots film, and reduces the dependence on metal elements.
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