公开(公告)号：US06811606B2

公开(公告)日：2004-11-02

申请号：US09982834

申请日：2001-10-22

申请人： Shigeru Sakuma ,  Tsutomu Mizugaki ,  Kazuo Kimura ,  Shuuichi Takano

发明人： Shigeru Sakuma ,  Tsutomu Mizugaki ,  Kazuo Kimura ,  Shuuichi Takano

IPC分类号： C30B3302

CPC分类号： G03F7/70958 ,  C30B29/12 ,  C30B33/00 ,  G02B1/02 ,  G03F7/70966 ,  Y10S117/906

摘要： A manufacturing method for a single crystal of calcium fluoride by which it is possible to obtain a single crystal of calcium fluoride with adequately small double refraction, which can be used in optical systems for photolithography, and in particular, a single crystal of calcium fluoride with a large diameter (ø200 mm or larger) having superior optical properties, which can be used for photolithography with a wavelength of 250 nm or less. A manufacturing method for a single crystal of calcium fluoride, having its optical properties improved through an annealing process in which a single crystal of calcium fluoride is contained in a sealable container, and said container is sealed and vacuumed, followed by, a process of heating with a heater arranged external to said container so that the temperature inside said container is raised to a first temperature, which is lower than the melting point of said single crystal of calcium fluoride, a process by which the temperature inside said container is maintained at said first temperature for a designated period of time, and a process by which the temperature inside said container is lowered to room temperature, wherein, the maximum temperature of the annealing process is set to be a first temperature within the range of 1020 to 1150° C. Also provided is a manufacturing method for a single crystal of calcium fluoride having its optical properties improved through an annealing process such that, its maximum temperature during the thermal process is set to a first temperature which is within the range of 1020 to 1150° C., and which is maintained for a designated period of time, and its cooling speed for reaching a second temperature, which is in the range of (or around) 600 to 800° C., from said first temperature is set to be 1.2° C./hour or less, or its cooling speed for reaching a second temperature, which is in the range of (or around) 700 to 900° C., from said first temperature is set to be 1.2° C./hour or less.

公开(公告)号：US06332922B1

公开(公告)日：2001-12-25

申请号：US09257296

申请日：1999-02-25

申请人： Shigeru Sakuma ,  Tsutomu Mizugaki ,  Kazuo Kimura ,  Shuuichi Takano

发明人： Shigeru Sakuma ,  Tsutomu Mizugaki ,  Kazuo Kimura ,  Shuuichi Takano

IPC分类号： C30B3306

CPC分类号： G03F7/70958 ,  C30B29/12 ,  C30B33/00 ,  G02B1/02 ,  G03F7/70966 ,  Y10S117/906

摘要： A manufacturing method for a single crystal of calcium fluoride by which it is possible to obtain a single crystal of calcium fluoride with adequately small double refraction, which can be used in optical systems for photolithography, and in particular, a single crystal of calcium fluoride with a large diameter (ø 200 mm or larger) having superior optical properties, which can be used for photolithography with a wavelength of 250 nm or less. A manufacturing method for a single crystal of calcium fluoride, having its optical properties improved through an annealing process in which a single crystal of calcium fluoride is contained in a sealable container, and said container is sealed and vacuumed, followed by, a process of heating with a heater arranged external to said container so that the temperature inside said container is raised to a first temperature, which is lower than the melting point of said single crystal of calcium fluoride, a process by which the temperature inside said container is maintained at said first temperature for a designated period of time, and a process by which the temperature inside said container is lowered to room temperature, wherein, the maximum temperature of the annealing process is set to be a first temperature within the range of 1020 to 1150° C. Also provided is a manufacturing method for a single crystal of calcium fluoride having its optical properties improved through an annealing process such that, its maximum temperature during the thermal process is set to a first temperature which is within the range of 1020 to 1150° C., and which is maintained for a designated period of time, and its cooling speed for reaching a second temperature, which is in the range of (or around) 600 to 800° C., from said first temperature is set to be 1.2° C./hour or less, or its cooling speed for reaching a second temperature, which is in the range of (or around) 700 to 900° C., from said first temperature is set to be 1.2° C./hour or less.

公开(公告)号：US6123764A

公开(公告)日：2000-09-26

申请号：US201802

申请日：1998-12-01

申请人： Tsutomu Mizugaki ,  Kazuo Kimura ,  Shuuichi Takano

发明人： Tsutomu Mizugaki ,  Kazuo Kimura ,  Shuuichi Takano

IPC分类号： F26B5/04 ,  B01J6/00 ,  B01J19/00 ,  C01F11/22 ,  C30B11/00 ,  C30B29/12 ,  B30B11/02

CPC分类号： C30B11/00 ,  C30B29/12

摘要： A manufacturing method for a single crystal of calcium fluoride includes the steps of degassing calcium fluoride powder particles to desorb impurities from surfaces of the calcium fluoride powder particles, preprocessing the degassed calcium fluoride powder particles by fusing the degassed calcium fluoride powder particles in a crucible to obtain a preprocessed product, and re-fusing the preprocessed product in a crucible to grow a single crystal of calcium fluoride.

摘要翻译： 氟化钙的单晶的制造方法包括以下步骤：将氟化钙粉末颗粒脱气以从氟化钙粉末颗粒的表面解吸杂质，通过将坩埚中脱气的氟化钙粉末颗粒熔合而将脱气的氟化钙粉末颗粒进行预处理， 获得预处理产品，并将坩埚中的预处理产品重新熔化，以生长单晶的氟化钙。

公开(公告)号：US6146456A

公开(公告)日：2000-11-14

申请号：US135016

申请日：1998-08-17

申请人： Tsutomu Mizugaki ,  Shuuichi Takano

发明人： Tsutomu Mizugaki ,  Shuuichi Takano

IPC分类号： G02B1/02 ,  C30B29/12 ,  C30B33/00 ,  C30B33/02 ,  H01S5/00

CPC分类号： C30B33/00 ,  C30B29/12

摘要： An annealing method for a single crystal of fluoride is provided. The method includes the steps of removing at least one of attached objects and absorbed objects from the surface of the single crystal of fluoride to clean the surface, thereafter annealing the single crystal of fluoride, including heating the single crystal of fluoride and gradually cooling the heated single crystal of fluoride, and removing a deteriorated layer which is formed on the surface of the single crystal of fluoride during the annealing step.

摘要翻译： 提供氟化物单晶的退火方法。 该方法包括以下步骤：从氟化物单晶表面除去附着物和吸收物中的至少一种，以清洁表面，然后对氟化物的单晶进行退火，包括加热氟化物的单晶并逐渐冷却加热的 并且在退火步骤中去除在氟化物单晶表面上形成的劣化层。

公开(公告)号：US06201634B1

公开(公告)日：2001-03-13

申请号：US09265893

申请日：1999-03-11

申请人： Shigeru Sakuma ,  Shuuichi Takano

发明人： Shigeru Sakuma ,  Shuuichi Takano

IPC分类号： G02F100

CPC分类号： G03F7/70958 ,  G02B1/02 ,  G02B5/3083

摘要： The present invention provides a method for calculating the birefringence of an optical element and selecting the direction of minimum birefringence in the optical element. A material for manufacturing the optical element is a fluoride single crystal with a birefringence value that is reduced compared to conventional materials. The fluoride single crystal is cut from a fluoride single crystal ingot obtained by crystal growth so that the {111} crystal planes are two parallel planes, after which the optical performance is improved by subjecting this material to a heat treatment. The birefringence of the optical element is calculated by converting known piezo-optical constants in a specified three-dimensional orthogonal coordinate system for the optical material into piezo-optical constants in an arbitrary three-dimensional orthogonal coordinate system. The amount of change in the refractive index &Dgr;n1 of the optical material in a first direction along the direction of one coordinate axis of the arbitrary three-dimensional orthogonal coordinate system, and the amount of change in the refractive index &Dgr;n2 of the optical material in a second direction which is perpendicular to the first direction are calculated using a uniaxial stress that is applied to the optical material along the first direction and the piezo-optical constants in the arbitrary three-dimensional coordinate system. The amount of birefringence as seen from a third direction perpendicular to the first direction and the second direction is determined in the arbitrary three-dimensional orthogonal coordinate system by determining the difference between the amount of change in the refractive index &Dgr;n1 and the amount of change in the refractive index &Dgr;n2.

公开(公告)号：US06411384B1

公开(公告)日：2002-06-25

申请号：US09748195

申请日：2000-12-27

申请人： Shigeru Sakuma ,  Shuuichi Takano

发明人： Shigeru Sakuma ,  Shuuichi Takano

IPC分类号： G01J400

摘要： The present invention provides a method for calculating the birefringence of an optical element and selecting the direction of minimum birefringence in the optical element. The birefringence of the optical element is calculated by converting known piezo-optical constants in a specified three-dimensional orthogonal coordinate system for the optical material into piezo-optical constants in an arbitrary three-dimensional orthogonal coordinate system. The amount of change in the refractive index &Dgr;n1 of the optical material in a first direction and the amount of change in the refractive index &Dgr;n2 of the optical material in a second direction which is perpendicular to the first direction are calculated using a uniaxial stress that is applied to the optical material along the first direction. The amount of birefringence as seen from a third direction perpendicular to the first direction and the second direction is determined in the arbitrary three-dimensional orthogonal coordinate system by determining the difference between the amount of change in the refractive index &Dgr;n1 and the amount of change in the refractive index &Dgr;n2.

公开(公告)号：US20070222689A1

公开(公告)日：2007-09-27

申请号：US11690231

申请日：2007-03-23

申请人： Hiroyuki Aoyama ,  Masayuki Gonda ,  Sigeo Fujii ,  Shuuichi Takano

发明人： Hiroyuki Aoyama ,  Masayuki Gonda ,  Sigeo Fujii ,  Shuuichi Takano

IPC分类号： H01Q1/24 ,  H01Q1/00

CPC分类号： H01Q1/40 ,  H01Q1/243 ,  H01Q9/30

摘要： The linear conductor 2 penetrates the magnetic base 1 along with the longitudinal direction of the magnetic base 1. The linear conductor 2 has a straight shape. The straight shape conductor 2 is installed so that it is surrounded by outside planes of the magnetic base 1, such as the side of a rectangular parallelepiped or a cylindrical peripheral face, and it penetrates both end sides of the magnetic base 1 in the longitudinal direction.

摘要翻译： 线状导体2与磁性基体1的长度方向一起贯通磁性基体1。 直线导体2具有直的形状。 直型导体2被安装成使其被诸如长方体侧或圆柱形周面的磁性基体1的外部平面包围，并且沿着纵向方向穿透磁性基体1的两端侧 。

公开(公告)号：US07821468B2

公开(公告)日：2010-10-26

申请号：US11690231

申请日：2007-03-23

申请人： Hiroyuki Aoyama ,  Masayuki Gonda ,  Sigeo Fujii ,  Shuuichi Takano

发明人： Hiroyuki Aoyama ,  Masayuki Gonda ,  Sigeo Fujii ,  Shuuichi Takano

IPC分类号： H01Q1/00 ,  H01Q1/38

CPC分类号： H01Q1/40 ,  H01Q1/243 ,  H01Q9/30

摘要： The linear conductor 2 penetrates the magnetic base 1 along with the longitudinal direction of the magnetic base 1. The linear conductor 2 has a straight shape. The straight shape conductor 2 is installed so that it is surrounded by outside planes of the magnetic base 1, such as the side of a rectangular parallelepiped or a cylindrical peripheral face, and it penetrates both end sides of the magnetic base 1 in the longitudinal direction.

摘要翻译： 线状导体2与磁性基体1的长度方向一起贯通磁性体1。线状导体2呈直线状。 直型导体2被安装成使其被诸如长方体侧或圆柱形周面的磁性基体1的外部平面包围，并且沿着纵向方向穿透磁性基体1的两端侧 。