Abstract:
A semiconductor integrated circuit including a MOSFET having a polycide gate structure, a resistor and a capacitor is monolithically manufactured. Polycrystalline silicon film, a dielectric film, and another polycrystalline silicon film are consecutively deposited. After processes of patterning and etching the dielectric film, the remaining dielectric films are used as an etching protection mask for the resistor and a capacitor. A refractory metal silicide for a polycide gate is uniformly deposited over the remaining another polycrystalline silicon films and dielectric films. The refractory metal silicide and polycrystalline silicon are consecutively etched through a patterned resist mask and the remaining dielectric films to simultaneously form the polycide gate, resistor and capacitor. Thus, a capacitor having small change in capacitance versus applied voltage is manufactured in a MOS IC device having a polycide gate.
Abstract:
An integrating sphere type standard light source has a spherical shell the inner surface of which is coated with a white coating having a high reflectivity. The shell has a light source aperture in the top thereof, a viewing aperture in the side thereof and a specimen exposure aperture in the bottom thereof. A light source is mounted in the light source aperture and depends into said shell and includes a source of light and a light shielding plate between the source of light and the remainder of the interior of the shell, the light shielding plate also being coated with a white coating having a high reflectivity. A specimen supporting plate is positioned beneath the specimen exposure aperture and is normally positioned for supporting a specimen at the bottommost point of an imaginary spherical surface which is an extension of the internal surface of the shell into the specimen exposure aperture. A specimen supporting plate is mounted for movement into and out of the normal position thereof for placing a specimen to be observed on the specimen supporting plate.
Abstract:
A test apparatus for determining the abrasion resistance of the surface of a sample to be tested. The sample is placed with the surface to be tested facing downwardly through an aperture in a sample support, an abrasion wheel is positioned beneath the sample and urged upwardly against the sample, the sample is reciprocated horizontally back and forth over the abrasion wheel, and at the end of each reciprocal movement, the abrasion wheel is moved away from the sample and rotationally indexed.
Abstract:
A xenon lamp containing magnet adsorbers, each of the magnet adsorbers having pieces of magnetic material which are dispersed in a ring-shaped, heat-resisting, electric insulating plate and being mounted between the discharge portion of an electrode inside the tube of the xenon lamp and the sealed portion of the electrode at an end of the tube, whereby the metallic vapor and other volatilized matters resulting from the elevated temperature of the electrode during discharge are adsorbed by the adsorber due to the magnetic field of the latter and do not adhere to the inside of the tube to thereby prevent blackening, devitrification and white-turbidity of the tube.
Abstract:
A temperature compensating device for use in regulating the voltage to a lamp in a lightfastness tester. The device includes a plurality of aluminum-coated glass rods adjacent the lamp for transmitting the light produced by the lamp to a light-receiving element, such as a photoelectric cell. A heat-sensitive resistance is electrically connected to the light-receiving element and compensates for changes in temperature of the light-receiving element. An electric circuit is combined with the light-receiving element and the resistance to receive the temperature adjusted voltage from the light-receiving element and the resistance and to compare that voltage with a reference voltage. In turn, the voltage to the xenon lamp is adjusted based on the difference between the two compared voltages.
Abstract:
On the principal surface of an Si semiconductor substrate, a field oxide film is formed defining an active region. On the active region, an insulated gate structure is formed including a gate oxide film and a polycrystalline Si layer. At the same time, a lower capacitor electrode of the polycrystalline Si layer is formed on the field oxide film. The surface of the polycrystalline layer is oxidized to form an insulating film. Another polycrystalline Si layer is deposited covering the insulating film. A mask is formed over the lower capacitor electrode. By using this mask as an etching mask, anisotropic etching is performed to leave an upper capacitor electrode and side wall spacers on the side walls of the gate electrode and lower capacitor electrode.
Abstract:
A method of carrying out an accelerated light fastness test on a sample of a material to be used under certain conditions of air convection along the surface thereof, is constituted by the steps of positioning a sample to be tested with the surface thereof which is exposed to light during intended conditions of use of the material spaced at a distance from a light source having a constant intensity of light radiated therefrom for causing the surface of the sample to receive a desired intensity of light, and positioning a filter between the surface of the sample and the light source and spaced a distance from the surface of the sample for causing air between the filter and the sample to be at the convection conditions corresponding to the certain conditions of air convection at the surface of the material under its intended conditions of use, whereby the temperature conditions of the material at the surface facing the source of light are made to correspond to the temperature conditions during the intended use of the material.
Abstract:
A ventilation regulated hot air supplied constant temperature oven used for heat aging testing. Heated air of a predetermined temperature is supplied to a test oven body through an air supply port. Ventilation of the test oven is carried out through the air discharge port at a predetermined rate at predetermined time intervals. A discharge cylinder is provided at the discharge port, a blower is connected to the air supply port, a differential pressure detector is connected to the discharge cylinder and adapted to detect a differential pressure corresponding to the air flow rate on the basis of the data obtained in advance on the relation between a difference between the pressure at an outlet port of the blower and that at the discharge cylinder and the air flow rate, and a blower speed regulator is provided between the blower and the differential pressure detector and adapted to control the speed of the blower in accordance with an output level of a signal corresponding to a differential pressure measured by the differential pressure detector.
Abstract:
For enhancement of device stability, there is disclosed a semiconductor device fabricated on a semiconductor substrate comprising (a) source and drain regions formed in a surface portion of the semiconductor substrate and spaced from each other by a channel region, (b) a gate insulating film formed on the channel region, (c) a gate electrode structure formed on the gate insulating film, and (d) a passivation film of an insulating material covering the gate electrode structure and containing hydrogen-bonded-silicons equal in number to or less than 5.times.10.sup.21 per cm.sup.3, and the unstable hydrogen-bonded-silicons are decreased in number so that the semiconductor device only have a decreased trap density which results in stable operation.
Abstract translation:为了提高器件的稳定性,公开了一种在半导体衬底上制造的半导体器件,包括:(a)源极和漏极区域,形成在半导体衬底的表面部分中并且通过沟道区彼此间隔开,(b)栅极绝缘 形成在沟道区上的膜,(c)形成在栅极绝缘膜上的栅电极结构,以及(d)覆盖栅电极结构并且含有等于或少于等于或等于或等于数个的氢键的硅的绝缘材料的钝化膜 超过5×10 21 / cm 3,并且不稳定的氢键合硅的数量减少,使得半导体器件仅具有降低的陷阱密度,这导致稳定的操作。
Abstract:
A method and apparatus for measuring the gloss of a surface of a material by receiving light reflected from the surface and measuring the amount of light. Parallel light rays from a light source are directed against the surface the gloss of which is to be determined at an angle of incidence, and a cross-section of light rays reflected from the surface at an angle of reflection equal to the angle of incidence is received and the central region of the cross-section of the light rays is blocked out by a light intercepting plate, so that only the light received after the blocking out of the central region is used as a determination of the gloss of the surface.