公开(公告)号：US06436791B1

公开(公告)日：2002-08-20

申请号：US09880259

申请日：2001-06-14

申请人： Shih-Chi Lin ,  Szu-An Wu ,  Ying-Lang Wang ,  Guey-Bao Huang

发明人： Shih-Chi Lin ,  Szu-An Wu ,  Ying-Lang Wang ,  Guey-Bao Huang

IPC分类号： H01L21302

CPC分类号： H01L21/76224

摘要： A method of forming a shallow trench isolation structure comprising the following steps. A substrate having an upper surface is provided. A pad oxide layer is formed upon the substrate. A nitride layer is formed over the pad oxide layer. The nitride layer having an upper surface. A trench is formed by etching the nitride layer, pad oxide layer and a portion of the substrate. The trench having a bottom and side walls. An oxide film is deposited upon the etched nitride layer surface, and the bottom and side walls of trench. The oxide film is removed from over the etched nitride layer surface, and the bottom of the trench to expose a portion of substrate within the trench. The removal of oxide film leaving oxide spacers over the trench side walls. Epitaxial silicon is selectively deposited over the exposed portion of substrate, filling the trench. A thermal oxide layer is formed over the epitaxial silicon, annealing the interface between the epitaxial silicon and the oxide spacers. The etched nitride layer and the oxide layer from over the etched substrate; and a portion of the oxide spacers extending above the surface of the etched substrate are removed, whereby the shallow trench isolation structure is formed within the trench.

摘要翻译： 一种形成浅沟槽隔离结构的方法，包括以下步骤。 提供具有上表面的基板。 衬底氧化层形成在衬底上。 在衬垫氧化物层上形成氮化物层。 氮化物层具有上表面。 通过蚀刻氮化物层，衬垫氧化物层和衬底的一部分来形成沟槽。 沟槽具有底部和侧壁。 在蚀刻的氮化物层表面和沟槽的底部和侧壁上沉积氧化物膜。 从蚀刻的氮化物层表面上方的氧化膜和沟槽的底部去除氧化膜，以露出沟槽内的衬底的一部分。 去除在沟槽侧壁上留下氧化物间隔物的氧化物膜。 外延硅被选择性地沉积在衬底的暴露部分上，填充沟槽。 在外延硅上形成热氧化层，退火外延硅与氧化物间隔物之间​​的界面。 蚀刻的氮化物层和来自蚀刻的衬底上的氧化物层; 并且去除在蚀刻的衬底的表面上方延伸的氧化物间隔物的一部分，由此在沟槽内形成浅沟槽隔离结构。