公开(公告)号：US20090004367A1

公开(公告)日：2009-01-01

申请号：US12172478

申请日：2008-07-14

申请人： Shih-Kwan LIU ,  Chun-Pin Huang ,  Yu-Chin Shu

发明人： Shih-Kwan LIU ,  Chun-Pin Huang ,  Yu-Chin Shu

IPC分类号： B05D3/14

CPC分类号： H01G4/30 ,  H01G2/22 ,  H01G4/2325 ,  H01G4/255 ,  Y10T428/24926

摘要： A ceramic glaze-coating structure of a chip element and a method of forming the same are provided. In the ceramic glaze-coating structure, a high-density, smooth, and high-impedance ceramic glaze is coated on the body of an element. As for the terminal electrode part, the unique firing characteristics between the material of the terminal electrode (e.g., conductive compositions) and the ceramic glaze are utilized, such that the ceramic glaze layer between the surface of the terminal electrode or the terminal electrode and the ceramic body is absorbed and then removed by sintering; thus, the ceramic glaze coating structure of a chip element with only the element body being coated is formed.

摘要翻译： 提供了一种芯片元件的陶瓷釉面结构及其形成方法。 在陶瓷釉面结构中，高密度，平滑和高阻抗的陶瓷釉料涂覆在元件的主体上。 对于端子电极部分，利用端子电极（例如，导电组合物）的材料和陶瓷釉料之间的独特的烧制特性，使得在端子电极或端子电极的表面之间的陶瓷釉层和 陶瓷体被吸收，然后通过烧结除去; 因此，形成仅具有被涂覆元件体的芯片元件的陶瓷釉涂层结构。

公开(公告)号：US20060234022A1

公开(公告)日：2006-10-19

申请号：US11403777

申请日：2006-04-13

申请人： Shih-Kwan Liu ,  Chun-Pin Huang ,  Yu-Chin Shu

发明人： Shih-Kwan Liu ,  Chun-Pin Huang ,  Yu-Chin Shu

IPC分类号： H01G4/228 ,  H01G4/06 ,  B32B18/00

CPC分类号： H01G4/30 ,  H01G2/22 ,  H01G4/2325 ,  H01G4/255 ,  Y10T428/24926

摘要： A ceramic glaze-coating structure of a chip element and a method of forming the same are provided. In the ceramic glaze-coating structure, a high-density, smooth, and high-impedance ceramic glaze is coated on the body of an element. As for the terminal electrode part, the unique firing characteristics between the material of the terminal electrode (e.g., conductive compositions) and the ceramic glaze are utilized, such that the ceramic glaze layer between the surface of the terminal electrode or the terminal electrode and the ceramic body is absorbed and then removed by sintering; thus, the ceramic glaze coating structure of a chip element with only the element body being coated is formed.

摘要翻译： 提供了一种芯片元件的陶瓷釉面结构及其形成方法。 在陶瓷釉面结构中，高密度，平滑和高阻抗的陶瓷釉料涂覆在元件的主体上。 对于端子电极部分，利用端子电极（例如，导电组合物）的材料和陶瓷釉料之间的独特的烧制特性，使得在端子电极或端子电极的表面之间的陶瓷釉层和 陶瓷体被吸收，然后通过烧结除去; 因此，形成仅具有被涂覆元件体的芯片元件的陶瓷釉涂层结构。