公开(公告)号：US20130122190A1

公开(公告)日：2013-05-16

申请号：US13456208

申请日：2012-04-25

申请人： Shih-Wei Lee ,  Lung-Chieh Wang

发明人： Shih-Wei Lee ,  Lung-Chieh Wang

IPC分类号： B05D1/18 ,  B05C3/09

CPC分类号： C23C18/1216 ,  C23C18/125 ,  H01L31/022483

摘要： A chemical bath deposition system is used for forming a buffer layer and a ZnO window layer on a back electrode substrate having a photoelectric transducing layer. The chemical bath deposition system includes a first bath tank and a second bath tank. The first bath tank is used for storing a buffer-layer solution. The buffer-layer solution forms the buffer layer on the photoelectric transducing layer when the back electrode substrate is immersed in the buffer-layer solution. The second bath tank is for storing a window-layer solution. The window-layer solution forms the ZnO window layer on the buffer layer when the back electrode substrate is immersed in the window-layer solution. The first bath tank and the second bath tank are in an in-line arrangement.

摘要翻译： 化学浴沉积系统用于在具有光电转换层的背电极基板上形成缓冲层和ZnO窗层。 化学浴沉积系统包括第一浴槽和第二浴槽。 第一个浴槽用于储存缓冲层溶液。 当背面电极衬底浸入缓冲层溶液中时，缓冲层溶液在光电转换层上形成缓冲层。 第二个浴槽用于储存一个窗层溶液。 当背面电极衬底浸入窗层溶液中时，窗层溶液在缓冲层上形成ZnO窗层。 第一个浴缸和第二个浴缸是排列在一起的。

公开(公告)号：US20130118403A1

公开(公告)日：2013-05-16

申请号：US13467068

申请日：2012-05-09

申请人： Shih-Wei Lee ,  Lung-Chieh Wang ,  Chih-Lung Lin

发明人： Shih-Wei Lee ,  Lung-Chieh Wang ,  Chih-Lung Lin

IPC分类号： B05C3/09 ,  B05C11/00

CPC分类号： H01L31/0322 ,  C23C18/1204 ,  C23C18/125 ,  H01L21/67057 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

摘要： A chemical bath deposition system is used for forming a buffer layer on a back electrode substrate having a photoelectric transducing layer. The chemical bath deposition system includes a chemical bath tank, a chemical-solution purification device, and a dosing device. The chemical bath tank is used for storing a buffer-layer solution including cation and anion. The cation is adapted to react with the anion to form the buffer layer when the back electrode substrate is immersed in the buffer-layer solution. The chemical-solution purification device is communicated with the chemical bath tank for removing residual cation to obtain a purified solution after the cation reacts with the anion to form the buffer layer. The dosing device is for performing compensation of the cation according to a component ratio of a purified solution.

摘要翻译： 化学浴沉积系统用于在具有光电转换层的背电极基板上形成缓冲层。 化学浴沉积系统包括化学浴池，化学溶液净化装置和计量装置。 化学浴槽用于储存包含阳离子和阴离子的缓冲层溶液。 当背电极衬底浸入缓冲层溶液中时，阳离子适于与阴离子反应形成缓冲层。 化学溶液净化装置与化学浴池连通，用于除去残余阳离子，在阳离子与阴离子反应形成缓冲层后得到纯化溶液。 计量装置用于根据纯化溶液的组分比来进行阳离子的补偿。