MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS

    公开(公告)号:US20240345480A1

    公开(公告)日:2024-10-17

    申请号:US18625950

    申请日:2024-04-03

    IPC分类号: G03F7/029 G03F7/32

    CPC分类号: G03F7/029 G03F7/325

    摘要: The negative-tone molecular resist composition comprises an onium salt containing a cation having a cyclic ether site and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR when processed by photolithography using high-energy radiation. The molecular resist composition of the invention meets both high sensitivity and high resolution and is improved in LWR when processed by photolithography using high-energy radiation, especially EB or EUV lithography. The resist composition is quite useful for precise micropatterning.