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公开(公告)号：US11994798B2
公开(公告)日：2024-05-28
申请号：US16937716
申请日：2020-07-24
CPC分类号： G03F7/0042 , G03F7/0045 , G03F7/168 , G03F7/2004 , G03F7/2037 , G03F7/325
摘要： The present invention is a resist material containing: (i) a metal compound shown by the following general formula (M-1) and (ii) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material.
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公开(公告)号：US11267937B2
公开(公告)日：2022-03-08
申请号：US16225275
申请日：2018-12-19
发明人： Daisuke Kori , Seiichiro Tachibana , Tsutomu Ogihara , Satoru Kitano , Yukio Abe , Fumihiro Hatakeyama , Taiki Kobayashi
IPC分类号： C08G65/34 , B01D15/08 , B01J20/08 , C07C37/82 , C08G8/04 , C08G8/20 , G03F7/09 , C07C39/14 , C08G10/04 , C08L61/06
摘要： The invention provides: a dihydroxynaphthalene condensate which suppresses soft particle generation and is suitably usable for a composition excellent in filterability; and a method for producing the dihydroxynaphthalene condensate. In the method for producing a dihydroxynaphthalene condensate, dihydroxynaphthalene to be used has a sulfur element content of 100 ppm or less in terms of mass among constituent elements. The dihydroxynaphthalene and a condensation agent are condensed in presence of an acid or a base to produce the dihydroxynaphthalene condensate.
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公开(公告)号：US11042090B2
公开(公告)日：2021-06-22
申请号：US16044015
申请日：2018-07-24
IPC分类号： G03F7/11 , G03F7/09 , G03F7/16 , C08G16/02 , C09D161/00 , C08G8/22 , C08G8/20 , C08G8/04 , C09D161/12 , G03F7/075
摘要： The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.
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公开(公告)号：US10131603B2
公开(公告)日：2018-11-20
申请号：US15585720
申请日：2017-05-03
摘要： The present invention provides a method for reducing a metal of a sugar-alcohol compound, the method including the steps of (A) protecting a hydroxyl group of a sugar-alcohol compound containing metal impurities with a protecting group, (B) removing the metal impurities from the sugar-alcohol compound having the hydroxyl group protected with the protecting group, and (C) eliminating the protecting group of the sugar-alcohol compound from which the metal has been removed. There can be provided a method for reducing a metal of a sugar-alcohol compound that can provide a sugar-alcohol compound with a suitable quality for the semiconductor apparatus manufacturing process.
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公开(公告)号：US09671694B1
公开(公告)日：2017-06-06
申请号：US15282238
申请日：2016-09-30
IPC分类号： G03F7/11 , G03F7/09 , C09D125/18 , C09D133/14 , G03F7/20 , G03F7/16 , H01L21/308
CPC分类号： G03F7/094 , C09D125/18 , C09D133/14 , G03F7/0752 , G03F7/091 , G03F7/162 , G03F7/168 , G03F7/2004 , G03F7/2006 , G03F7/2008 , G03F7/2016 , H01L21/0332 , H01L21/3081 , H01L21/3083
摘要： A layered structure includes a substrate; an underlayer including a reversibly crosslinked polymer and/or oligomer interconnected by ester functionalities; a silicon-containing mask overlaying the underlayer; and a photoresist overlaying the silicon-containing hardmask layer. Also described are multilayer lithographic processes and processes of forming the underlayer, which generally includes coating an underlayer composition onto a surface of the substrate at a thickness effective to provide a planar upper surface, wherein the underlayer composition includes a polymer including terminal alcohol groups, a multifunctional anhydride, and a solvent. The underlayer composition is heated to a temperature to effect a crosslinking reaction between the multifunctional anhydride and the terminal alcohol groups to form the ester functionalities, which can be selectively removed (reversibly crosslinked) using a wet etchant.
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公开(公告)号：US09091933B2
公开(公告)日：2015-07-28
申请号：US13679024
申请日：2012-11-16
IPC分类号： G03F7/38 , G03F7/004 , C08F220/34 , C08F220/36 , C08F226/06 , C08F226/10 , C08F228/02 , C08F228/06 , G03F7/038 , G03F7/039 , G03F7/20 , G03F7/32 , C08F220/38
CPC分类号： G03F7/38 , C08F220/34 , C08F220/36 , C08F226/06 , C08F226/10 , C08F228/02 , C08F228/06 , C08F2220/343 , C08F2220/365 , C08F2220/382 , C08F2220/385 , C08F2220/387 , G03F7/004 , G03F7/0382 , G03F7/0397 , G03F7/2041 , G03F7/325
摘要： A negative pattern is formed by applying a resist composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having an amino group, amide bond, carbamate bond or nitrogen-containing heterocycle, (B) a photoacid generator, and (C) an organic solvent onto a substrate, prebaking, exposing, baking, and selectively dissolving an unexposed region of the resist film in an organic solvent-based developer.
摘要翻译： 通过涂布抗蚀剂组合物形成负型图案，该抗蚀剂组合物包含（A）包含具有被酸不稳定基团保护的羧基的重复单元（a1）的聚合物和具有氨基，酰胺键，氨基甲酸酯键或氮原子的重复单元（a2） （B）光致酸产生剂，和（C）有机溶剂在基材上，预先烘烤，曝光，烘烤和选择性地将抗蚀剂膜的未曝光区域溶解在有机溶剂型显影剂中。
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7.发明授权Silicon-containing antireflective coatings including non-polymeric silsesquioxanes 有权含硅的抗反射涂层，包括非聚合倍半硅氧烷公开(公告)号：US08999625B2
公开(公告)日：2015-04-07
申请号：US13767114
申请日：2013-02-14
发明人： Martin Glodde , Wu-Song Huang , Javier Perez , Ratnam Sooriyakumaran , Takeshi Kinsho , Tsutomu Ogihara , Seiichiro Tachibana , Takafumi Ueda
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0751 , G03F7/0755 , G03F7/091 , G03F7/325
摘要： Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiOx background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides. Embodiments further include lithographic structures including an organic anti-reflective layer, the above-described silicon-containing anti-reflective layer above the organic anti-reflective layer, and a photoresist layer above the above-described silicon-containing anti-reflective layer. Embodiments further include a method of forming a lithographic structure utilizing the above-described silicon-containing anti-reflective layer.
摘要翻译： 实施方案包括含硅的抗反射材料，其包含含硅基聚合物，非聚合倍半硅氧烷材料和光酸产生剂。 含硅基聚合物可以在SiOx背景上含有发色团部分，透明部分和反应性位点，其中x为约1至约2.示例性非聚合倍半硅氧烷材料包括具有与亲水性连接的酸不稳定侧基的多面体低聚倍半硅氧烷 示例性的酸不稳定侧基可以包括碳酸叔烷基酯，叔烷基酯，叔烷基醚，缩醛和缩酮。示例性亲水基团可以包括酚，醇，羧酸，酰胺和磺酰胺。 实施例还包括包括有机抗反射层，上述有机抗反射层上的含硅抗反射层和在上述含硅抗反射层上方的光致抗蚀剂层的光刻结构。 实施例还包括利用上述含硅抗反射层形成光刻结构的方法。
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公开(公告)号：US12032287B2
公开(公告)日：2024-07-09
申请号：US16935615
申请日：2020-07-22
CPC分类号： G03F7/0045 , G03F7/0048 , G03F7/2004 , G03F7/2037 , G03F7/168 , G03F7/325
摘要： The present invention is a resist material containing: (i) a compound (i-1), which is a (partial) condensate or a (partial) hydrolysis-condensate of a metal compound shown by the following general formula (A-1), or a compound (i-2), which is a reaction product of the compound (i-1) and a dihydric or trihydric alcohol shown by the following general formula (A-2), (ii) a photo-acid generator, (iii) a basic compound, and (iv) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material.
M(OR1A)4 (A-1)
R2A(OH)m (A-2)-
公开(公告)号：US20190258160A1
公开(公告)日：2019-08-22
申请号：US16274416
申请日：2019-02-13
IPC分类号： G03F7/004
摘要： A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure.
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10.发明授权公开(公告)号：US09880470B2
公开(公告)日：2018-01-30
申请号：US14855772
申请日：2015-09-16
IPC分类号： C09D183/00 , G03F7/11 , H01L21/3213 , H01L21/308 , H01L21/311 , H01L21/02 , H01L21/033 , C09D183/10 , C08G77/48 , G03F7/075
CPC分类号： G03F7/11 , C08G77/48 , C09D183/10 , G03F7/0752 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/3081 , H01L21/31111 , H01L21/31144 , H01L21/32139
摘要： A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process.
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