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1.发明授权Light pattern exposure method, halftone phase shift mask, and halftone phase shift mask blank 有权光图案曝光方法，半色调相移掩模和半色调相移掩模空白公开(公告)号：US08753786B2
公开(公告)日：2014-06-17
申请号：US13682188
申请日：2012-11-20
发明人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Yosuke Kojima , Takashi Haraguchi , Tomohito Hirose
摘要： A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom %, and an oxygen content of 5-20 atom %. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.
摘要翻译： 光图案曝光方法是通过半色调相移掩模将ArF准分子激光照射到抗蚀剂膜上。 掩模包括透明基板和包含过渡金属，硅，氮和氧并且原子比（Met / Si）为0.18-0.25，氮含量为25-50原子的材料的半色调相移膜的图案 ％，氧含量为5-20原子％。 可以以至少10kJ / cm 2的累积剂量用ArF准分子激光照射掩模。
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公开(公告)号：US08753787B2
公开(公告)日：2014-06-17
申请号：US13682228
申请日：2012-11-20
发明人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Yosuke Kojima , Takashi Haraguchi , Tomohito Hirose
摘要： A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a photomask. The photomask includes a transparent substrate and a pattern of optical film of a material comprising a transition metal, silicon, nitrogen and oxygen, with contents thereof falling in a specific range. The photomask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.
摘要翻译： 光图案曝光方法是通过光掩模将ArF准分子激光照射到抗蚀剂膜上。 光掩模包括透明基板和包含过渡金属，硅，氮和氧的材料的光学膜图案，其内容物落在特定范围内。 可以以至少10kJ / cm 2的累积剂量用ArF准分子激光照射光掩模。
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