公开(公告)号：US5654230A

公开(公告)日：1997-08-05

申请号：US418841

申请日：1995-04-07

申请人： Shinichi Jintate ,  Yoshihiko Okamoto ,  Toshiharu Nishimura ,  Atsushi Hosaka

发明人： Shinichi Jintate ,  Yoshihiko Okamoto ,  Toshiharu Nishimura ,  Atsushi Hosaka

IPC分类号： H01L21/205 ,  C30B31/16 ,  H01L21/20 ,  H01L21/22

CPC分类号： C30B31/16 ,  Y10S438/925

摘要： A doped film forming method comprising, the steps of preparing gas source for supplying a film forming gas into the process tube, gas source for supplying doping gases, in which a dope is included, into the process tube, a dry pump for exhausting the process tube, and an apparatus for burning a not-reacted element in waste gas, arranging a plurality of substrates in the process tube in such a way that they are separated from their adjacent ones by a certain interval, exhausting the process tube to keep it reduced in pressure, heating the substrates in the process tube to a temperature range of 500.degree.-600.degree. C., controlling amounts of the doping and film forming gases, while exhausting the process tube, at the ratio of the amount of the film forming gas to the amount of the doping gases being in the range of 1 to 1.625.times.10.sup.-3 to 2.125.times.10.sup.-3, and causing the doping and film forming gases to be reacted with the substrates.

摘要翻译： 一种掺杂膜形成方法，包括以下步骤：制备用于将成膜气体供应到处理管中的气体源，将包含掺杂气体的掺杂气体供应到工艺管中，用于排出该过程的干燥泵 管和用于燃烧废气中的未反应元件的设备，将多个基板在处理管中排列成使得它们与其相邻的基板分开一定间隔，排出处理管以保持其减小 在压力下，将处理管中的基板加热至500℃-600℃的温度范围，控制掺杂和成膜气体的量，同时以成膜气体量的比例排出处理管 掺杂气体的量在1至1.625×10 -3至2.125×10 -3的范围内，并且使掺杂和成膜气体与基底反应。

公开(公告)号：US5330352A

公开(公告)日：1994-07-19

申请号：US11372

申请日：1993-01-29

申请人： Shingo Watanabe ,  Shinichi Jintate

发明人： Shingo Watanabe ,  Shinichi Jintate

IPC分类号： H01L21/22 ,  C30B31/16 ,  H01L21/31 ,  F27B9/04

CPC分类号： C30B31/16

摘要： An oxidation/diffusion processing apparatus includes a processing vessel, arranged such that a longitudinal direction is vertical, for storing a plurality of target objects to be processed, a heater arranged around the processing vessel, for heating the interior of the processing vessel, a process gas supply mechanism for supplying a process gas from the lower portion of the processing vessel into the processing vessel, and an exhaust mechanism for exhausting a processed exhaust gas from the upper portion of the processing vessel. The process gas is supplied to the target objects heated to a predetermined temperature by the heater to perform oxidation/diffusion processing to the target objects.

摘要翻译： 氧化/扩散处理装置包括处理容器，其布置成纵向方向垂直，用于存储待处理的多个目标物体，设置在处理容器周围的用于加热处理容器内部的加热器， 用于将处理气体从处理容器的下部供给到处理容器中的气体供给机构，以及用于从处理容器的上部排出经处理的废气的排气机构。 通过加热器将工艺气体供给到加热到预定温度的目标物体，以对目标物体进行氧化/扩散处理。

公开(公告)号：US5354702A

公开(公告)日：1994-10-11

申请号：US84092

申请日：1993-07-01

申请人： Eiichi Arima ,  Akira Nishimoto ,  Shinichi Jintate ,  Kazuo Sudo ,  Kazutoshi Oku

发明人： Eiichi Arima ,  Akira Nishimoto ,  Shinichi Jintate ,  Kazuo Sudo ,  Kazutoshi Oku

IPC分类号： H01L51/05 ,  H01L21/3205 ,  H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  H01L21/70

CPC分类号： H01L21/32055 ,  H01L29/7883 ,  Y10S257/914

摘要： A method for manufacturing an EEPROM comprises the step of using raw gas containing an organic compound having a molecular weight of more than 44, such as ethyl acetate and tetrahydrofuran when a first polysilicon layer serving as a select gate electrode and a second polysilicon layer serving as a floating gate electrode are deposited by a CVD process. The above described step allows a voltage at the time of tunneling electrons to be decreased.

摘要翻译： 一种制造EEPROM的方法包括当用作选择栅电极的第一多晶硅层和用作第二多晶硅层的情况下，使用含有分子量大于44的有机化合物的原料气体，例如乙酸乙酯和四氢呋喃的步骤 通过CVD工艺沉积浮栅电极。 上述步骤允许电子隧穿时的电压降低。

公开(公告)号：US5252847A

公开(公告)日：1993-10-12

申请号：US241887

申请日：1988-09-08

申请人： Eiichi Arima ,  Akira Nishimoto ,  Shinichi Jintate ,  Kazuo Sudo ,  Kazutoshi Oku

发明人： Eiichi Arima ,  Akira Nishimoto ,  Shinichi Jintate ,  Kazuo Sudo ,  Kazutoshi Oku

IPC分类号： H01L51/05 ,  H01L21/3205 ,  H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  H01L29/68 ,  H01L29/78

CPC分类号： H01L21/32055 ,  H01L29/7883 ,  Y10S257/914

摘要： A method for manufacturing an EEPROM comprises the step of using raw gas containing an organic compound having a molecular weight of more than 44, such as ethyl acetate and tetrahydrofuran when a first polysilicon layer serving as a select gate electrode and a second polysilicon layer serving as a floating gate electrode are deposited by a CVD process. The above described step allows a voltage at the time of tunneling electrons to be decreased.

摘要翻译： 一种制造EEPROM的方法包括当用作选择栅电极的第一多晶硅层和用作第二多晶硅层的情况下，使用含有分子量大于44的有机化合物的原料气体，例如乙酸乙酯和四氢呋喃的步骤 通过CVD工艺沉积浮栅电极。 上述步骤允许电子隧穿时的电压降低。